Gaz Akış Hızının Fiziksel Buhar İletimi Yöntemiyle Büyütülen Antrasen Tek Kristallerin Özellikleri Üzerine Etkisi

Year 2021, Volume: 9 Issue: 1, 164 - 173, 31.01.2021

Çisem Kırbıyık , Selen Polat

https://doi.org/10.29130/dubited.765025

Abstract

Elektronik cihazlar uygulamalarında kullanılan organik yarıiletkenlerin moleküler yapıları ve düzenlilikleri cihaz performansı üzerinde oldukça önemli özelliklerdir. Bu çalışmada, elektronik cihazlarda sıklıkla tercih edilen antrasenin fiziksel buhar iletimi (PVT) yöntemiyle büyük boyutlu ve yüksek moleküler düzene sahip tek kristalleri büyütülmüştür. Açık sistem PVT yönteminde kullanılan argon gazının akış hızının büyütülen tek kristallerin yapısal, optik ve elektriksel özellikleri üzerine etkisi incelenmiştir. Büyütülen tek kristaller optik mikroskop, AFM, XRD ve UV-Vis absorpsiyon spektroskopisi ile karakterize edilmiştir. Yapısal ve optik analizler sonucunda gaz akış hızının kristal özellikleri üzerinde büyük etkiye sahip olduğu gözlenmiştir. 3,0 L sa-1 argon akış hızında büyütülen antrasen tek kristallerinin en ince (670 nm) ve en yüksek elektriksel iletkenlik değerine (1,80x10-4 S cm-1) sahip olduğu belirlenmiştir. Yapılan çalışma, yüksek performanslı elektronik cihazlarda kullanılacak organik yarıiletken tek kristallerinin özelliklerinin gaz akış hızı ile değiştirilebileceği gösterilmiştir.

Keywords

Antrasen, Tek kristal büyümesi, PVT, Optik özellikler

Supporting Institution

TÜBİTAK, Konya Teknik Üniversitesi Bilimsel Araştırma Projeleri Komisyonu

Project Number

118M641, 18201152

Thanks

Bu çalışma 118M641 numaralı proje kapsamında TÜBİTAK ve 18201152 numaralı proje kapsamında Konya Teknik Üniversitesi Bilimsel Araştırma Projeleri Komisyonu tarafından desteklenmiştir.

The Effect of Gas Flow Rate on Properties of Anthracene Single Crystals Grown by Physical Vapour Transport Method

Abstract

Molecular structure and ordering of organic semiconductors used in electronic devices are the key parameters on device performance. In this study, anthracene single crystals with large size and high quality, which is one of most widely used organic semiconductor, were growth by open physical vapour transport (PVT) process. The effect of inert argon flow rate used in open PVT method on structural, optical and electrical properties of anthracene single crystals was investigated. The single crystals were characterized by optical microscope, AFM, XRD and UV-Vis absorption spectroscopy. According to structural and optical properties, it was observed that the argon flow rate has a strong effect on single crystal properties. It was determined that the thinnest (670 nm) single crystal and the highest electrical conductivity (1.80x10-4 S cm-1) were obtain under 3.0 L h-1 argon flow rate. Herein, it was concluded that the properties of organic semiconductor single crystals utilized in high performance electronic devices could be easily tuned.

Keywords

Anthracene, Single crystal growth, PVT, Optical properties

Project Number

118M641, 18201152

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