Al/Si3N4:ZnO/pSi/Al Schottky Diyotların Akım-Voltaj Karakterizasyonu
Year 2023,
Volume: 11 Issue: 1, 302 - 311, 31.01.2023
Erhan İbrahimoğlu
,
Fatih Çalışkan
,
Zafer Tatlı
Abstract
Son yıllarda toksik ve doğaya zarar veren kimyasallar yerine doğal materyaller kullanılarak çeşitli nano malzemelerin sentezi ilgi çekmektedir. Biyolojik sentez yöntemi doğal malzemeler kullanılarak uygulanan bir sentez yöntemidir. Biyolojik sentez ile doğaya zarar veren ve toksik kimyasallar yerine indirgeyici ajan ve stabilizör olarak doğal katkı maddeleri kullanılarak üretilen nano boyutlu tozlar biyomedikal, enerji depolama gibi farklı alanlarda kullanılmaktadır. Biyolojik yöntem ile sentezlenen nano partiküllerin diyotlarda kullanıldığında performansı nasıl etkileyeceği konusunda çalışmalar mevcut değildir. Bu çalışmada çinkooksit (ZnO) tozu hibiskus bitki ekstraktı kullanılarak biyolojik yöntemle sentezlenmiş ve ince film olarak p tipi silisyum altlık üzerine kaplanmıştır. Sentezlenen ZnO tozları XRD analizi ile incelenmiş hegzagonal wurtize formunda olduğu belirlenmiştir. Çalışmanın bir bölümü biyolojik sentez ile ZnO ince filmin kaplanmasına odaklanırken devamında elde edilen ZnO ince filmler silisyum nitrür (Si3N4) katkılanarak temel diyot parametrelerinden idealite faktörünün nasıl değiştiği incelenmiştir. Yapıya Si3N4 katkısı gerçekleştirilerek elektron deşik rekombinasyonunun azaltılması ve ara yüzey pasivizasyonunun artırılması amaçlanmıştır. Hazırlanan Si3N4 katkılı ZnO solüsyonu silisyum altlık yüzeyine 3000 devir/dakika dönme hızında 10 saniyede kaplanmıştır ve elde edilen ince filmler 400 ℃’de tavlanmıştır. Hazırlanan ince film kaplamaların elektriksel karakterizasyonunu belirlemek amacıyla alüminyum ohmik ve doğrultucu kontaklar fiziksel buhar biriktirme (PVD) ile kaplanmıştır. Daha sonra FESEM analizi ile diyotlar morfolojik olarak incelenerek kaplama kalınlığının ortalama 200 nm olduğu gözlemlenmiştir. Hazırlanan diyotlara Keithley 2400 cihazında karanlıkta akım-voltaj (I-V) analizi yapılmıştır. Elde edilen I-V analizinden Si3N4 katkılı ve katkısız diyotların idealite faktörleri sırasıyla 2,92 ve 4,17; doğrultma oranları ise 96,3 ve 10,8 olarak hesaplanmıştır.
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Year 2023,
Volume: 11 Issue: 1, 302 - 311, 31.01.2023
Erhan İbrahimoğlu
,
Fatih Çalışkan
,
Zafer Tatlı
References
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