Mikronaltı Boyutlu Başlangıç Tozuyla Üretilen Y2O3 Katkılı Si3N4 Seramiklerde Sinterleme Proses Çevriminin Termal İletkenliğe Etkisi

Year 2020, Volume: 7 Issue: 3, 1332 - 1342, 30.09.2020

Pinar Uyan

https://doi.org/10.31202/ecjse.755213

Abstract

Elektronik cihazlarda ısı artışını kontrol ihtiyacı, yüksek termal iletkenlikli altlık malzemelerin üretilmesinin temel nedenini oluşturmaktadır. Si3N4 seramiklerde termal iletkenliği etkileyen parametrelerinin kontrolü ile bu endüstriyel uygulamalar için uygun özellikte malzemeler geliştirilebilir. Sinterleme sonrası mikroyapıda oluşan fazların türü miktarı ve dağılımı termal iletkenliği etkiler. Si3N4 seramiklerin termal iletkenliğine etki eden, bu mikroyapı özellikleri, sinterleme ilavelerine ve sinterleme tekniklerine bağlı olarak değişir. Bu çalışmada, Si3N4 başlangıç tozuna (<1 µm, %2 β), Y2O3 ilave edilerek gaz basınçlı sinterleme (GPS) ile üretilmiş Si3N4 seramiklerin, sinterleme sonrası farklı soğutma çevrimlerinin, mikroyapı ve termal iletkenliğe etkisi araştırılmıştır. Termal iletkenlik, yavaş soğutma ile 42,69 W/m.K, hızlı soğutma ile 44,18 W/m.K elde edilmiştir. Yavaş soğutma ile yoğunluk azalmış, açık porozite artmış, termal iletkenlik ~% 3,5 oranında azalmıştır.

Keywords

Termal iletkenlik, GPS, Karakterizasyon

Supporting Institution

Bilecik Şeyh Edebali Üniversitesi Bilimsel Araştırma Projeleri Kordinatörlüğü

Project Number

2016-01.BŞEÜ.06-03

Thanks

Bu çalışma, 2016-01.BŞEÜ.06-03 numaralı proje kapsamında, ‘’Bilecik Şeyh Edebali Üniversitesi Bilimsel Araştırma Projeleri Kordinatörlüğü’’ tarafından desteklenmiştir. Bu destek için teşekkürlerimi sunarım ve ayrıca değerli görüşleri ve desteği için, Prof. Dr. Servet TURAN’a teşekkürlerimi bir borç bilirim.

The Effect of Sintering Process Cycle on Thermal Conductivity in Y2O3 Additive Si3N4 Ceramics Produced with Submicron Size Starting Powder

Abstract

The need for control of temperature rise in electronic devices is a fundamental cause of the production of high thermal conductivity substrate materials. By controlling the parameters affecting thermal conductivity Si3N4 ceramics, materials with suitable properties for the industrial applications can be developed. The amount and distribution of the phases formed in the microstructure after sintering affect the thermal conductivity. These microstructure properties, which affect the thermal conductivity of Si3N4 ceramics, vary depending on sintering additions and sintering techniques. In this study, the effect on microstructure and thermal conductivity of different cooling rates of Si3N4 ceramics gas pressure sintered with Y2O3 addition to Si3N4 starting powder
(<1 µm, %2 β) was investigated. Thermal conductivity was 42.69 W/m.K with slow cooling and 44.18 W/m.K with fast cooling. With not fast cooling, density decreased, open porosity increased, thermal conductivity decreased by ~ 3.5% ratio.

Keywords

Thermal conductivity, GPS, Characterization

Project Number

2016-01.BŞEÜ.06-03

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