Numerical Analysis of Displacement of Circular Discs Based On Boron Carbide (B4C) -Silicon Carbide (SİC) and Silicon Nitride (Si3N4) materials

Year 2021, Volume: 8 Issue: 3, 1108 - 1122, 30.09.2021

Hüseyin Fırat Kayıran

https://doi.org/10.31202/ecjse.883532

Cited By: 2

Abstract

In this study, the radial behavior of disks are made of different materials and increasing from the inner surface to the outer surface under temperature distribution was analyzed analytically, assuming that the modulus of elasticity does not change with temperature. The resulting calculations were supported by the ANSYS program. Boron carbide (B4C) is often used in the space industry in our country. The model of the first disc is the material of boron carbide (B4C), and the model of the materials of the second and third discs are silicon carbide (SiC) and silicon nitride (Si3N4), respectively. Discs mounted on any machine part may be subject to displacement at different temperatures. Discs can show different properties according to material and different temperature. At the end of the literature research, it was observed that experimental and numerical thermal stress analyses were performed and radial and tangential stresses were calculated at different temperatures in the disks. There have been insufficient studies to examine the radial displacement behavior of the discs under different temperature effects. In different studies, metal materials such as stainless steel and aluminum were mainly investigated. The difference of this study compared to previous studies are that the size of the modelled disk diameter and the specified temperature range are close to each other. Because small diameter disks are generally preferred in the defense industry and other unmanned aerial vehicles, as well as in the space technology, where temperature change is the main factor. Therefore, boron carbide (B4C) and silicon carbide (SİC), which are important materials in the aerospace industry today, were calculated the displacement values of silicon nitride (Si3N4) at temperatures of 40 ° C -50 ° C -60 ° C -70 ° C -80 ° C -90 ° C and shared with the literature. At the end of this numerical analysis, it was determined that the displacement value at 40 ° C on the inner surface of the boron carbide (B4C) material was 100.00 % higher than silicon carbide (SiC) and 157.14% higher than silicon nitride (Si3N4). At the end of this study, it was concluded that it is possible to use these disc materials with high hardness and good strength.

Keywords

Modulus of elasticity, poisson's ratio, thermal expansion coefficient,, disc,, displacements, Boron Carbide (B4C), Silicon Carbide (SSIC)

Numerical Analysis of Displacement of Circular Discs Based On Boron Carbide (B4C) -Silicon Carbide (SİC) and Silicon Nitride (Si3N4) materials

Abstract

: Bu çalışmada, farklı malzemelerden yapılmış ve sıcaklık dağılımı altında iç yüzeyden dış yüzeye doğru artan disklerin radyal davranışı, elastisite modülünün sıcaklık ile değişmediği varsayılarak analitik olarak analiz edilmiştir. Elde edilen hesaplamalar ANSYS programı tarafından desteklenmiştir. Bor karbür (B4C) ülkemizde uzay endüstrisinde sıklıkla kullanılmaktadır. İlk diskin modeli Bor karbür (B4C) malzemesidir ve ikinci ve üçüncü disklerin malzemelerinin modeli sırasıyla Silisyum karbür (SİC) ve Silisyum nitrürdür (Si3N4). Herhangi bir makine parçasına monte edilen diskler, farklı sıcaklıklarda yer değiştirmeye maruz kalabilir. Diskler malzemeye ve farklı sıcaklıklara göre farklı özellikler gösterebilir. Literatür araştırması sonunda; deneysel ve sayısal termal gerilme analizlerinin yapıldığı ve disklerde farklı sıcaklıklarda radyal ve teğetsel gerilmelerin hesaplandığı görülmüştür. Disklerin farklı sıcaklık etkileri altında radyal yer değiştirme davranışlarını incelemek için yeterli çalışmaların olmadığı görülmüştür. Farklı çalışmalarda, paslanmaz çelik ve alüminyum gibi metal malzemelerin ağırlıklı olarak araştırıldığı görülmüştür. Bu çalışmanın önceki çalışmalara göre farkı; modellenen disk çapının büyüklüğü ve belirtilen sıcaklık aralığı birbirine yakın olmasıdır. Çünkü küçük çaplı diskler genellikle savunma sanayinde ve diğer insansız hava sahası araçlarında ve sıcaklık değişiminin ana faktör olduğu uzay teknolojisinde tercih edilmektedir. Bu nedenle, günümüzde havacılık endüstrisinde önemli malzemeler olan Bor karbür (B4C) ve Silisyum karbür (SiC), Silisyum nitrür (Si3N4) ' ün 40 ° C -50 ° C -60 ° C -70 ° C -80 ° C -90 ° C sıcaklıklarında elde edilen yer değiştirme değerleri hesaplanmış ve literatürle paylaşılmıştır. Bu nümerik analizin sonunda, Bor karbür (B4C) malzemeli diskin iç yüzeyinde 40 ° C'de yer değiştirme değerinin Silisyum karbürden (SiC) %100.00 ve Silisyum nitrürden (Si3N4) % 157.14 daha yüksek olduğu belirlenmiştir. Bu çalışmanın sonunda, bu disk malzemelerinin yüksek sertlik ve iyi mukavemet ile kullanılmasının mümkün olduğu sonucuna varılmıştır.

Keywords

Elastisite modülü, poisson oranı, termal genleşme katsayısı,, disk,, deplasman, Bor Karbür (B4C), Silikon Karbür (SSIC), Silikon Nitrid (Si3N4)

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