Geniş Bantta Düşük Yansıtmalı Kare Örgü Yapılı ve Kuantum Nokta Kaplı Silisyum Nanotüp Kaplı Yüzeyler

Year 2022, , 479 - 484, 31.03.2022

Turgut Tut

https://doi.org/10.31590/ejosat.1083320

Abstract

Bu çalışmada daha önceki çalışmamızda optimize edilmiş boyutları başlangıç nanoçubuk yapının mimarisi olarak aldık. Nanositun yüksekliği, çapı, doldurma oranı özelliklerine göre optimize edilmiş ve ağırlıklı ortalama ile hesaplanmış yüzey yansıması yüzde 3.75’tir. Tam alanlı sonlu farklar zaman düzlemi metodu kullanılarak 400nm-1100nm spektrumda nanoyapılı yüzeylerden yansıyan ışığın elektrik ve manyetik alanları simüle edilmiştir. Bu makalede, nanoçubukların içindeki oyukların çapı ve kaplanan ince film dielektrik kaplamanın düzensiz kaplanmasının yüzeyden optik yansıma üzerindeki etkisinin sonuçları sunulmuştur. Bu iki parametrenin optimizasyonu ile ağırlıklı ortalama yansıma yüzde 3.35 düzeyine indirilmiştir. Nano örgü yapının üzerine kaplanan kuantum nokta katmanının da etkisi simüle edilmiştir. Bu çalışmada kuantum noktaları Lorentz dielektrik olarak modellenmiştir ve simülasyonlar yansımanın yüzde 3.1 seviyesine indiğini göstermiştir. Optimizasyon reçetesi açık bir şekilde sunulmuştur ve geliştirilen bu metod sadece kare örgülü yapılar için değil fotovoltaikte kullanılan diğer örgülü nanoyapılar için de kullanışlı olacaktır.

Keywords

Silisyum, Az yansıtma, Güneş Enerjisi.

Supporting Institution

Tübitak 1001, Abdullah Gül Üniversitesi

Project Number

219M280

Thanks

Bu çalışma TÜBİTAK 1001 programı tarafından 219M280 nolu proje ile desteklenmiştir. Hesaplama işlemleri AGÜ (Abdullah Gül Üniversitesi) tarafından desteklenmiştir.

Broadband Low Reflection Surfaces With Silicon Nano-tube Square Arrays And Quantum Dot Layers

Abstract

In this study, we take as a starting nanostructure which is already optimized in terms of the silicon nanopillar arrays’ structure pillar height, pillar diameter, and filling ratio such that the optical reflection from its surface is very low (weighted average reflection 3.75 percent). Full-field Finite Difference Time Domain method is used to simulate electric and magnetic fields and calculate the reflection from the modified nanostructured substrate surfaces in 400nm-1100nm spectral range. In this paper, we present the optimization of the structure in terms of the silicon nanotube structure cavity diameter, step coverage of the dielectric thin film. As a result, the weighted reflection is decreased to 3.35 percent. We also want to simulate the quantum dot solution layer deposited over the nanostructure. We modeled the quantum dots as Lorentz dielectric and decreased the optical reflection even lower level of 3.1 percent. Optimization recipe is clearly presented, and the developed method is not only useful for square arrays but also for regular arrays of nanopillars in general for photovoltaic devices.

Keywords

Silicon, Nanopillars, Low reflection, Solar energy.

Project Number

219M280

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