Al/Organometalik Kompleks/p-Si Yapısının Elektriksel Özelliklerinin İncelenmesi

Year 2023, , 64 - 73, 31.01.2023

Hülya Doğan

https://doi.org/10.31590/ejosat.1196948

Abstract

Organometalik kompleksi (OMcomplex) arayüzey tabakası olarak p-Si üzerinde ince bir film olarak biriktirmek için döndürmeli kaplama kullanıldı. Al/OMcomplex/p-Si Schottky diyot yapısı gerekli işlemlerden sonra oda sıcaklığında elde edilmiştir. Arayüz katmanlı Schottky diyotun Akım-Gerilim (I-V) ve Kapasitans-Gerilim (C-V) ölçümleri diyotun karakteristik parametrelerini hesaplamak için kullanıldı. I-V okumalarından bariyer yüksekliği (Φb0) ve idealite faktörü (n) hesaplandı ve sonuçlar sırasıyla 0.797 eV ve 1.615 oldu. Seri direnç (Rs), Cheung ve Norde fonksiyonları ile bulunarak karşılaştırıldı. Ayrıca 10 kHz ile 1 MHz frekans aralığında yapılan C-V ölçümlerinden doping yoğunluğu (Na) değerleri ve engel yüksekliği bulunmuş ve I-V ve C-V gözlemlerinden ulaşılan Φb0 değerleri karşılaştırılmıştır. I-V ve C-V den elde edilen engel yüksekliği değerlerinin farklılığı, engel yüksekliğinin homojen olmayışı, arayüzey tabakasının varlığı, arayüzey tabakasının kalınlığı ve seri direnç etkilerinin yanı sıra her iki yöntemin farklı tabiatına atfedilmiştir.

Keywords

Organometalik kompleks, Schottky Diyot, Engel yüksekliği

Structure of Al/Organometallic Complex/p-Si Investigation of Electrical Properties

Abstract

Spin coating was used to deposit the interfacial layer of the organometallic complex (OM complex) as a thin film on p-Si. Al/OM complex/p-Si Schottky diode structure was achieved at room temperature after the required procedures. Current-Voltage (I-V) and Capacitance-Voltage (C-V) measurements of an interface-layered Schottky diode were used to compute the diode's characteristic parameters. Among the I-V readings, the barrier height (Φb0) and ideality factor (n) were computed, and the results were 0.797 eV and 1.615, respectively. The series resistance (Rs) was found and compared with the Cheung and Norde functions. Additionally, doping density (Na) values and barrier height were found out from C-V measurements in the frequency range of 10 kHz to 1 MHz, and the Φb0 values from I-V and C-V observations were compared. The difference in the barrier height values obtained from I-V and C-V was attributed to the inhomogeneity of the barrier height, the presence of the interfacial layer, the thickness of the interface layer and the series resistance effect, as well as the different nature of both methods.

Keywords

Organometallic complex, Schottky diode, Barrier height.

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