CuInSe2 ve CuGaSe2 İnce Filmlerin Özellikleri Üzerine Karşılaştırmalı Çalışma

Year 2019, Issue: 15, 77 - 85, 31.03.2019

İdris Candan , Hasan Hüseyin Güllü

https://doi.org/10.31590/ejosat.491331

Cited By: 1

Abstract

Cu(In_1-xGa_x)Se₂
(CIGS) yarıiletken ince filmlerin iki kenar noktası olan x=0 (CuInSe₂)
ve x=1 (CuGaSe₂) ince filmleri, Cu, InSe ve GaSe hedeflerden
saçtırma yöntemi ile 250 ^oC sıcaklıkta soda lime cam alttaşlar
üzerine kaplandı. In ve Ga oranı ve üretim sonrası ısıl işlemin CuInSe₂
(CIS) ve CuGaSe₂ (CGS) ince filmlerin özellikleri üzerine etkileri
araştırıldı. Üretilmiş filmlerin yapısal özelliklerini incelemek için  X-ışını kırınımı (XRD) ve örneklerin
bileşenleri enerji dağılımlı X-ışını kırınımı analizi (EDXA) yöntemi
kullanılarak analiz edildi. İnce film örneklerinin Raman aktif modlarının
tayini için oda sıcaklığında Raman spektroskopi ölçümleri yapıldı. 400 ^oC
sıcaklıkta ısıl işlem uygulanmış CIS ve CGS ince film örneklerinin en aktif
modları (A₁ modu) en yoğun çizgilerin sırayla 178 cm^-1 ve
185 cm^-1 olduğu gözlendi. Bu mod kalkopirit yapıların Raman spektroskopisinde
gözlemlenen en güçlü moddur. Isıl işlem uygulanmamış ve 350 ^oC’ta
ısıl işlem uygulanmış CGS örneklerinde 486 cm^-1 çizgisi gözlenmiş
olmasına rağmen bu çizginin yoğunluğu artan ısıl işlem sıcaklığı ile ters
orantılı olarak azaldığı ve 400 ^oC uygulanan ısıl işlem sonrası
tamamen yok olduğu gözlenmiştir. Üretilen CIS ve CGS ince filmlerin optik
geçirgenlik ölçümleri sonucunda ısıl işlem uygulanmayan filmler ve at 400 ^oC
sıcaklıkta ısıl işlem uygulanan filmler için optik bant aralıklarındaki değişim
değerleri CIS için 1.28 eV ile  1.45 eV,
CGS için 1.68 eV ile 1.75 eV aralıklarında değiştiği  hesaplandı. Numunelerin oda sıcaklığındaki
elektriksel iletkenlikleri ısıl işlem öncesi ve 400 ^oC ısıl işlem
sonrasında n-CIS için sırayla 8.6x10^-3 ve 13.6x10^-2
(Ω.cm)^-1, p-CGS için sırayla 1.6 and 1.9 (Ω.cm)^-1 olarak
ölçüldü.

Keywords

CIS, CGS, İnce Filmler, Saçtırma, XRD, Raman Spektroskopisi

Comparative study on the properties of CuInSe2 and CuGaSe2 thin film

Abstract

Two edge of Cu(In_1-xGa_x)Se₂
(CIGS) thin film semiconductors for x=0 (CuInSe₂) and x=1 (CuGaSe₂)
have been produced onto the soda lime glass substrates at 250 ^oC by
sputtering from Cu, InSe and GaSe targets. The effects of In and Ga ratio and
the post-annealing at 350 ^oC and 400 ^oC on the properties
of CuInSe₂ (CIS) and CuGaSe₂ (CGS) thin film samples have
been investigated. The structural properties of the deposited films have been examined
by using X-ray diffraction (XRD) and the compositions of samples were analyzed
by performing energy dispersive X-ray diffraction analysis (EDXA) techniques.
Raman spectra of thin film samples were studied at room temperature to
determine the Raman active modes. The most intensive line (A₁ modes)
at 178 cm^-1 and 185 cm^-1 were observed for CIS and CGS
thin films annealed at 400 ^oC, respectively. This is the most active
mode detected in the Raman spectra of this type of chalcopyrite structures. For
as-grown and annealed CGS thin films at 350 ^oC , the line 486 cm^-1
was observed however intensity of this line decreased with increasing annealing
temperature and totally disappeared after annealing at 400 ^oC. Optic
transmission measurements showed that the deposited CIS and CGS thin films have
optic band gap values for as grown and 
annealed (at 400 ^oC)  samples
changing from 1.28 eV  to 1.45 eV and
from 1.68 eV to 1.75 eV respectively. The room temperature electrical
conductivities of the samples were measured as 8.6x10^-3 and 13.6x10^-2
(Ω.cm)^-1 for n-type CIS thin film samples; 1.6 and 1.9 (Ω.cm)^-1
for p-type CGS thin film samples before and after annealing at 400 ^oC,
respectively.

Keywords

CIS, CGS, Thin films, Sputtering, XRD, Raman Spectroscopy

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