Research Article

Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP

Volume: 16 Number: 1 July 1, 2026
EN TR

Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP

Abstract

High frequency switching elements that cause electromagnetic interference (EMI) are widely used in low voltage power distribution grid when considering todays smart grid components. One of these high frequency power electronic switching devices is the DC-DC converter. EMI emissions from DC-DC converters directly affect the wired communication method known as power line communication (PLC), which can carry the communication signal from the transmitter point to the receiver point using the existing power lines of the distribution grid. In this experimental research, the frame error rates (FER) of G3-PLC corresponding to Random Gauss and Random Linear Spread Spectrum Modulation (SSM) indexes were measured in real time, and the effect of EMI emissions of the Random SSM controlled silicon carbide mosfet based DC-DC converter on G3-PLC performance was revealed. The modulation index points that cause acceptable FER for G3-PLC were determined for Random Gauss and Random Linear SSM.

Keywords

References

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Details

Primary Language

English

Subjects

Electrical Engineering (Other)

Journal Section

Research Article

Publication Date

July 1, 2026

Submission Date

June 16, 2025

Acceptance Date

January 13, 2026

Published in Issue

Year 2026 Volume: 16 Number: 1

APA
Şen, M., & Üstün Ercan, S. (2026). Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP. European Journal of Technique (EJT), 16(1), 10-15. https://doi.org/10.36222/ejt.1720559
AMA
1.Şen M, Üstün Ercan S. Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP. EJT. 2026;16(1):10-15. doi:10.36222/ejt.1720559
Chicago
Şen, Murat, and Seda Üstün Ercan. 2026. “Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP”. European Journal of Technique (EJT) 16 (1): 10-15. https://doi.org/10.36222/ejt.1720559.
EndNote
Şen M, Üstün Ercan S (July 1, 2026) Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP. European Journal of Technique (EJT) 16 1 10–15.
IEEE
[1]M. Şen and S. Üstün Ercan, “Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP”, EJT, vol. 16, no. 1, pp. 10–15, July 2026, doi: 10.36222/ejt.1720559.
ISNAD
Şen, Murat - Üstün Ercan, Seda. “Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP”. European Journal of Technique (EJT) 16/1 (July 1, 2026): 10-15. https://doi.org/10.36222/ejt.1720559.
JAMA
1.Şen M, Üstün Ercan S. Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP. EJT. 2026;16:10–15.
MLA
Şen, Murat, and Seda Üstün Ercan. “Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP”. European Journal of Technique (EJT), vol. 16, no. 1, July 2026, pp. 10-15, doi:10.36222/ejt.1720559.
Vancouver
1.Murat Şen, Seda Üstün Ercan. Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP. EJT. 2026 Jul. 1;16(1):10-5. doi:10.36222/ejt.1720559

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