Araştırma Makalesi

Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP

Cilt: 16 Sayı: 1 1 Temmuz 2026
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Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP

Öz

High frequency switching elements that cause electromagnetic interference (EMI) are widely used in low voltage power distribution grid when considering todays smart grid components. One of these high frequency power electronic switching devices is the DC-DC converter. EMI emissions from DC-DC converters directly affect the wired communication method known as power line communication (PLC), which can carry the communication signal from the transmitter point to the receiver point using the existing power lines of the distribution grid. In this experimental research, the frame error rates (FER) of G3-PLC corresponding to Random Gauss and Random Linear Spread Spectrum Modulation (SSM) indexes were measured in real time, and the effect of EMI emissions of the Random SSM controlled silicon carbide mosfet based DC-DC converter on G3-PLC performance was revealed. The modulation index points that cause acceptable FER for G3-PLC were determined for Random Gauss and Random Linear SSM.

Anahtar Kelimeler

Kaynakça

  1. [1] Y. Luan, et al., "EMI challenges in modern power electronic-based converters: recent advances and mitigation techniques," Frontiers in Electronics. China, vol. 4, pp. 1-15, December 2023.
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  4. [4] K. Mainali and R. Oruganti, "Conducted EMI mitigation techniques for switch-mode power converters: a survey," IEEE Transactions on Power Electronics, vol. 25, pp. 2344-2356, September 2010.
  5. [5] S. Natarajan, T. S. Babu, K. Balasubramanian, U. Subramaniam and D. J. Almakhles, "A state-of-the-art review on conducted electromagnetic interference in non-isolated DC to DC converters," IEEE Access, vol. 8, pp. 2564-2577, December 2019.
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Ayrıntılar

Birincil Dil

İngilizce

Konular

Elektrik Mühendisliği (Diğer)

Bölüm

Araştırma Makalesi

Yayımlanma Tarihi

1 Temmuz 2026

Gönderilme Tarihi

16 Haziran 2025

Kabul Tarihi

13 Ocak 2026

Yayımlandığı Sayı

Yıl 2026 Cilt: 16 Sayı: 1

Kaynak Göster

APA
Şen, M., & Üstün Ercan, S. (2026). Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP. European Journal of Technique (EJT), 16(1), 10-15. https://doi.org/10.36222/ejt.1720559
AMA
1.Şen M, Üstün Ercan S. Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP. EJT. 2026;16(1):10-15. doi:10.36222/ejt.1720559
Chicago
Şen, Murat, ve Seda Üstün Ercan. 2026. “Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP”. European Journal of Technique (EJT) 16 (1): 10-15. https://doi.org/10.36222/ejt.1720559.
EndNote
Şen M, Üstün Ercan S (01 Temmuz 2026) Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP. European Journal of Technique (EJT) 16 1 10–15.
IEEE
[1]M. Şen ve S. Üstün Ercan, “Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP”, EJT, c. 16, sy 1, ss. 10–15, Tem. 2026, doi: 10.36222/ejt.1720559.
ISNAD
Şen, Murat - Üstün Ercan, Seda. “Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP”. European Journal of Technique (EJT) 16/1 (01 Temmuz 2026): 10-15. https://doi.org/10.36222/ejt.1720559.
JAMA
1.Şen M, Üstün Ercan S. Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP. EJT. 2026;16:10–15.
MLA
Şen, Murat, ve Seda Üstün Ercan. “Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP”. European Journal of Technique (EJT), c. 16, sy 1, Temmuz 2026, ss. 10-15, doi:10.36222/ejt.1720559.
Vancouver
1.Murat Şen, Seda Üstün Ercan. Investigating the Effect of EMI Generated by Random Gauss and Random Linear Modulations Controlled SiC Mosfet Based DC-DC Converter on G3-PLCP. EJT. 01 Temmuz 2026;16(1):10-5. doi:10.36222/ejt.1720559