COMPARATIVE STUDY OF 0.18ΜM LINEARIZED CMOS LOW NOISE AMPLIFIER

Year 2017, Volume: 7 Issue: 2, 219 - 228, 30.12.2017

Esra İnce Mustafa Türk

Abstract

 This paper
presents a comparative study of linearization techniques for Complementary
Metal Oxide Semiconductor low noise amplifier. The study is performed
previously reported three different techniques; modified derivative
superposition, post distortion and noise/distortion cancellation. To perform
the design, cascade amplifier topology and 0.18μm Complementary Metal Oxide
Semiconductor process parameters is used. These performance are studied in the
frequency range of 1 GHz to 5 GHz through simulation. Simulations are performed
in Applied Wave Research design environments program.The results are compared
with each other and previously reported publication in ways of Input third
order intercept point, Input second order intercept point, gain, input return loss,
noise figure and  DC power.

Keywords

Complementary Metal Oxide Semiconductor, Low noise amplifier, linearization techniques

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