Mathematical Modelling of the Bipolar Transistor using Artificial Neural Networks

Burhan Baraklı; Suayb Yener; Evren Arslan

TR EN

Yapay Sinir Aglari ile Bipolar Transistorun Matematiksel Modelinin Olusturulmasi

Abstract

Yapay Sinir Aglari (YSA), giris verilerinin yetersiz oldugu, mevcut verilerden hareketle bilinmeyen iliskilerin ortaya çikarilmasi ve algoritmasi veya kurallari tam olarak bilinmeyen durumlar için gelistirilmis bir bilgi isleme sistemidir. Bu çalismada, YSA mimarisi kullanilarak, bipolar transistorlara ait gerçek karakteristikler üzerinden belirlenen az sayida veriyle transistora iliskin matematiksel model olusturulmustur. BJT transistorlara ait geçis karakteristigi verileri giris vektörü olarak aga sunulmus ve YSA’nin egitim islemi bu karakteristikler üzerinden gerçeklestirilmistir. Egitiminin ardindan degisik transistorlara ait test girisleriyle YSA’nin ögrenme basarimi denenmis, degisik transistorlara ait modellerinin matematiksel olarak yüksek dogrulukta olusturuldugu gösterilmistir.

Keywords

BJT transistor, Yapay Sinir Agi, BJT Transistor Matematiksel Model

Details

Primary Language

English

Subjects

-

Journal Section

-

Authors

Burhan Baraklı This is me

Suayb Yener This is me

Evren Arslan This is me

Publication Date

August 1, 2006

Submission Date

August 1, 2006

Acceptance Date

-

Published in Issue

Year 2006 Volume: 2 Number: 2

IZ

https://izlik.org/JA94ME24PZ

Cite

RIS / Bibtex

APA

Baraklı, B., Yener, S., & Arslan, E. (2006). Mathematical Modelling of the Bipolar Transistor using Artificial Neural Networks. Electronic Letters on Science and Engineering, 2(2), 30-35. https://izlik.org/JA94ME24PZ

AMA

1.Baraklı B, Yener S, Arslan E. Mathematical Modelling of the Bipolar Transistor using Artificial Neural Networks. Electronic Letters on Science and Engineering. 2006;2(2):30-35. https://izlik.org/JA94ME24PZ

Chicago

Baraklı, Burhan, Suayb Yener, and Evren Arslan. 2006. “Mathematical Modelling of the Bipolar Transistor Using Artificial Neural Networks”. Electronic Letters on Science and Engineering 2 (2): 30-35. https://izlik.org/JA94ME24PZ.

EndNote

Baraklı B, Yener S, Arslan E (August 1, 2006) Mathematical Modelling of the Bipolar Transistor using Artificial Neural Networks. Electronic Letters on Science and Engineering 2 2 30–35.

IEEE

[1]B. Baraklı, S. Yener, and E. Arslan, “Mathematical Modelling of the Bipolar Transistor using Artificial Neural Networks”, Electronic Letters on Science and Engineering, vol. 2, no. 2, pp. 30–35, Aug. 2006, [Online]. Available: https://izlik.org/JA94ME24PZ

ISNAD

Baraklı, Burhan - Yener, Suayb - Arslan, Evren. “Mathematical Modelling of the Bipolar Transistor Using Artificial Neural Networks”. Electronic Letters on Science and Engineering 2/2 (August 1, 2006): 30-35. https://izlik.org/JA94ME24PZ.

JAMA

1.Baraklı B, Yener S, Arslan E. Mathematical Modelling of the Bipolar Transistor using Artificial Neural Networks. Electronic Letters on Science and Engineering. 2006;2:30–35.

MLA

Baraklı, Burhan, et al. “Mathematical Modelling of the Bipolar Transistor Using Artificial Neural Networks”. Electronic Letters on Science and Engineering, vol. 2, no. 2, Aug. 2006, pp. 30-35, https://izlik.org/JA94ME24PZ.

Vancouver

1.Burhan Baraklı, Suayb Yener, Evren Arslan. Mathematical Modelling of the Bipolar Transistor using Artificial Neural Networks. Electronic Letters on Science and Engineering [Internet]. 2006 Aug. 1;2(2):30-5. Available from: https://izlik.org/JA94ME24PZ