W-Ir Alaşım Schottky Engel Diyotların Performansının Sonlu Elemanlar Metoduyla İncelenmesi

Year 2022, Volume: 38 Issue: 2, 357 - 370, 23.08.2022

Osman Kahveci , Mehmet Fatih Kaya

Abstract

Bu çalışmada elektronik devrelerde yüksek hızlı anahtarlama özellikleriyle ön plana çıkan Schottky engel diyotlar, sonlu elemanlar metoduyla incelenmiştir. Schottky kontak modelleme çalışması için W-at.%10Ir, W-at.%20Ir, W-at.%30Ir, W-at.%50Ir ve W-at.%70Ir olmak üzere beş farklı oranda alaşım ile saf W ve saf Ir metalleri kullanılmıştır. Sonlu elemanlar yöntemi kullanılarak oluşturulan sayısal model deneysel olarak da doğrulanmıştır. Schottky engel diyotların engel yüksekliği, idealite faktörü ve seri direnç değerleri, ileri beslem yarı logaritmik akım-gerilim karakteristikleri, Cheung fonksiyonları ve Norde metodu kullanılarak hesaplanmıştır. Elde edilen sonuçlara göre, alaşımdaki Ir oranı artıkça iş fonksiyonunun ve engel yüksekliğinin arttığı belirlenmiştir. Alaşım diyotlar içinde en büyük engel yüksekliği, 4.951 eV iş fonksiyonuna sahip W-at.%70Ir alaşımıyla modellenen, W70Ir/n-Si diyot için yaklaşık 1.02 eV olarak elde edilmiştir. Ayrıca ileri beslem altında diyotların yüzey elektriksel potansiyeli, elektron ve hol konsantrasyonlarının dağılımı simule edilerek görsel grafikler oluşturulmuştur. Diyotların akım iletimi gerçekleşirken özellikle hollerin dağılımında önemli değişiklikler olmuştur. Bu çalışma ile olası bir üretim süreci sonunda diyotların sahip olabileceği parametreler elde edilerek alaşımlandırmanın Schottky diyotun çalışma şartlarına etkileri belirlenmiştir.

Keywords

Schottky Engel Diyot, Sonlu Elemanlar Metodu, COMSOL Multiphysics, W-Ir alaşımı.

Investigation the W-Ir Alloy Schottky Barrier Diodes Performance Using Finite Element Method

Abstract

In this study, Schottky barrier diodes, which stand out with their high-speed switching properties in electronic circuits, were investigated using the finite element method. For Schottky contact modeling work, five different alloy ratios like W-at.10%Ir, W-at.20%Ir, W-at.30%Ir, W-at.50%Ir and W-at.70%Ir, pure W and pure Ir metals were used. The numerical model created by using the finite element method was also experimentally verified. Barrier height, ideality factor and series resistance values of Schottky barrier diodes were calculated using forward feed semi-logarithmic current-voltage characteristics, Cheung functions and Norde method. According to the obtained results, it was determined that the work function and barrier height increased by the Ir ratio in the alloying samples. The largest barrier height among alloy diodes was obtained as approximately 1.02 eV for W70Ir/n-Si diode, which has aW-at.70%Ir alloy with a work function of 4.951 eV. In addition, visual graphs were created by simulating the surface electrical potential of the diodes, the distribution of electron and hole concentrations under feed-forward situation. While the current conduction of the diodes took place, significant changes in the distribution of the halls were observed. In this study, the effects of alloying on the working conditions of the Schottky diode were determined by obtaining the parameters that the diodes may have at the end of a possible production process.

Keywords

Schottky Barrier Diode, Finite Element Method, COMSOL Multiphysics, W-Ir alloy.

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