Investigation of Characreristics Parameters Obtained fromCurrent-Voltage and Capacity- Voltage Measurements of Cu/n-InP/In Schottky Barrier Diodes

Abstract

The Schottky barrier diodes were prepared using n-type InP (100) wafer. The ohmic contact was made by evaporating In and annealing at 320^oC under N₂ atmosphere. The Schottky contacts with 0,5 mm diameter were formed on the front face of sample. The I–V characteristics of the devices were measured in the temperature range of 20K and 300K. The I–V characteristics of Cu/n-type InP Schottky diodes were obtained as a function of temperature. The experimental I–V characteristics of the Cu/n-type InP Schottky diodes are in a good agreement with the traditional thermionic emission (TE) theory. The capacitance-voltage (C-V) characteristics of the Cu/n-type InP Schottky diodes have been measured between 300-10 K with 10K steps at 1 MHz frequency. Depending on sample temperature, the change of the electrical characterization of the device has been examined. The temperature dependent barrier characteristics of Cu/n-Type InP Schottky diodes are in a good agreement with “barrier inhomogeneous model” of Schottky contacts. In temperatures between 20-150 K and 150-300 K, show a double slope structure in a harmony of “The double Gaussian model” of Schottky contacts. In addition, the characteristic parameters as series resistance, carrier concentration, diffusion potential and Fermi energy values are calculated from temperature dependent I-V and C-V characteristics.

Keywords

• Double Gaussian Model,Ideality Factor,Inhomogeneous Barrier Height,Schottky Diode,Series Resistance

Cu/n-InP/In Schottky Diyotların Sıcaklığa Bağlı Akım-Voltaj ve Kapasite-Voltaj Ölçümlerinden Elde Edilen Karakteristik Parametrelerinin İncelenmesi

Abstract

Schottky engel diyotları n-tipi InP (100) yarıiletkeni kullanılarak elde edildi. Ohmik kontaklar In metali buharlaştırıldıktan sonra 320^oC’de ve N₂ ortamında tavlanarak yapıldı. Schottky kontakları 0,5 mm çapında ve yarıiletkenin ön yüzünde imal edildi. I–V karakteristikleri 20K ve 300K sıcaklık aralığında sıcaklığın bir fonksiyonu olarak ölçüldü. Deneysel I–V karakteristiklerinin Cu/n-tipi Inp Schottky diyotları için geleneksel Termiyonik Emisyon (TE) teorisi ile uyum içerisinde olduğu gözlemlendi. Cu/n-tipi InP Schottky diyotlarının kapasite-gerilim (C-V) ölçümleri 300-10 K sıcaklık aralığında ve 10K adımlarla 1 MHz frekansta alındı. Numune sıcaklığına bağlı olarak diyotlarımızın elektriksel karakterizasyonunda değişikliklerin olduğu tespit edildi. Cu/n-InP/In Schottky kontakların sıcaklığa bağlı engel karakteristiklerinin “engel inhomojenliği modeline” uyduğu belirlendi. 20-150 K ve 150-300 K sıcaklık aralığında Schottky diyotlara iki farklı ortalama engel yüksekliğinin eşlik etmesi engel yüksekliğinin çift Gaussian modeli ile uyum içerisindedir. Ayrıca sıcaklığa bağlı I-V ve C-V karakteristiklerinden seri direnç, taşıyıcı konsantrasyonu, difüzyon potansiyeli ve Fermi enerjisi gibi parametreleri de hesaplandı.

Keywords

• Çift Gaussian Modeli,İdealite Faktörü,İnhomojen Engel Yüksekliği,Schottky Diyot,Seri Direnç

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