Research Article

Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range

Volume: 14 Number: 1 March 31, 2021
EN TR

Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range

Abstract

Schottky diode with 6H-SiC/MEH-PPV/Al polymer interface was prepared and characterized by using current-voltage data in the temperature range of 80-400K. Important parameters of the produced diode such as ideality factor, barrier height and saturation current were calculated. In addition, the series resistance of the diode was calculated using Cheung and Norde methods. In addition, the calculated diode characteristics were discussed by comparing with each other and with the literature. Strong dependence of the calculated characteristics on temperature has been determined.

Keywords

References

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  5. 5. Wang, X., et al., Analysis of 600 V/650 V SiC schottky diodes at extremely high temperatures. CPSS Transactions on Power Electronics and Applications, 2020. 5(1): p. 11-17.
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  7. 7. Sciuto, A., et al., UV-A sensor based on 6H-SiC Schottky photodiode. IEEE Photonics Journal, 2017. 9(1): p. 1-10.
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Details

Primary Language

English

Subjects

Engineering

Journal Section

Research Article

Publication Date

March 31, 2021

Submission Date

January 29, 2021

Acceptance Date

March 21, 2021

Published in Issue

Year 2021 Volume: 14 Number: 1

APA
Güzel, T. (2021). Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range. Erzincan University Journal of Science and Technology, 14(1), 79-92. https://doi.org/10.18185/erzifbed.870828
AMA
1.Güzel T. Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range. Erzincan University Journal of Science and Technology. 2021;14(1):79-92. doi:10.18185/erzifbed.870828
Chicago
Güzel, Tamer. 2021. “Electrical Characterization of 6H-SiC MEH-PPV Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range”. Erzincan University Journal of Science and Technology 14 (1): 79-92. https://doi.org/10.18185/erzifbed.870828.
EndNote
Güzel T (March 1, 2021) Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range. Erzincan University Journal of Science and Technology 14 1 79–92.
IEEE
[1]T. Güzel, “Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range”, Erzincan University Journal of Science and Technology, vol. 14, no. 1, pp. 79–92, Mar. 2021, doi: 10.18185/erzifbed.870828.
ISNAD
Güzel, Tamer. “Electrical Characterization of 6H-SiC MEH-PPV Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range”. Erzincan University Journal of Science and Technology 14/1 (March 1, 2021): 79-92. https://doi.org/10.18185/erzifbed.870828.
JAMA
1.Güzel T. Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range. Erzincan University Journal of Science and Technology. 2021;14:79–92.
MLA
Güzel, Tamer. “Electrical Characterization of 6H-SiC MEH-PPV Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range”. Erzincan University Journal of Science and Technology, vol. 14, no. 1, Mar. 2021, pp. 79-92, doi:10.18185/erzifbed.870828.
Vancouver
1.Tamer Güzel. Electrical Characterization of 6H-SiC/MEH-PPV/Al Schottky Diode by Current-Voltage Method in A Wide Temperature Range. Erzincan University Journal of Science and Technology. 2021 Mar. 1;14(1):79-92. doi:10.18185/erzifbed.870828