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Investigation of Characreristics Parameters Obtained fromCurrent-Voltage and Capacity- Voltage Measurements of Cu/n-InP/In Schottky Barrier Diodes

Year 2018, Volume: 11 Issue: 3, 381 - 393, 30.12.2018
https://doi.org/10.18185/erzifbed.376279

Abstract

The
Schottky barrier diodes were prepared using n-type InP (100) wafer. The ohmic
contact was made by evaporating In and annealing at 320
oC under N2
atmosphere. The Schottky contacts with 0,5 mm diameter were formed on the front
face of sample. The I–V characteristics of the devices were measured in the
temperature range of 20K and 300K. The I–V characteristics of Cu/n-type InP
Schottky diodes were obtained as a function of temperature. The experimental
I–V characteristics of the Cu/n-type InP Schottky diodes are in a good
agreeme
nt with the traditional thermionic emission (TE) theory. The
capacitance-voltage (C-V) characteristics of the Cu/n-type InP Schottky diodes
have been measured between 300-10 K with 10K steps at 1 MHz frequency.
Depending on sample temperature, the change of the electrical characterization
of the device has been examined. The temperature dependent barrier
characteristics of Cu/n-Type InP Schottky diodes are in a good agreement with
“barrier inhomogeneous model” of Schottky contacts. In temperatures between
20-150 K and 150-300 K, show a double slope structure in a harmony of “The
double Gaussian model” of Schottky contacts. In addition, the characteristic
parameters as series resistance, carrier concentration, diffusion potential and
Fermi energy values are calculated from temperature dependent I-V and C-V
characteristics.

References

  • Ahaitouf, A., Losson, E., Bath, A. 2000. On the determination of interface state density in n-InP Schottky structures by current–voltage measurements: Comparison with DLTS results, Solid-State Electronics, 44, 515-520.
  • Al-Ahmadi, N.A., Ebrahim, F.A., Al-Jawhari, H.A., Mari R.H., Henini, M. 2017. Impact of doping on the performance of p-type Be-doped Al 0.29 Ga 0.71 As Schottky diodes, Modern Electronic Materials, 3 2, 66-71.
  • Ahmad, Z., Sayyad, M.H. 2009. Extraction of electronic parameters of Schottky diode based on an organic semiconductor methyl-red. Physica E 41 631.
  • Arehart, A.R., Moran, B., Speck J.S., Mishra U.K., DenBaars, S.P., Ringel, S.A. 2006. Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics. Applied Physics.100, 023709.
  • Biber, M. 2003. Low-temperature current-voltage characteristics of MIS Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky diodes, Physica B, 325, 138-148.
  • Büyükbaş Uluşan, A., Tataroğlu, A., Azizian, Y., Altındal, Ş. 2017. On the conduction mechanisms of Au/ Cu2O–CuO–PVA/n-SiMPS Schottky barrier diodes SBDs using current–voltage–temperatureI–V–T characteristics, Journal of Materials Science: Materials in Electronics, 29,159-170.
  • Chand, S., Kumar, J. 1997. Electron transport and barrier inhomogeneities in palladium silicide Schottky diodes. Applied Physics A,65, 497.
  • Chand, S., Kumar, J. 1996. Current transport in Pd2Si/N-Si 100 Schottky barrier diodes at low temperatures, Applied Physics A, 63, 171-178.
  • Chand, S., Kumar, J. 1997. Effect of barrier height distribution on the behavior of a Schottky diode, Journal of Applied Physics, 82 10, 5005-5010.
  • Cheung, S.K., Cheung, N.W. 1986. Extraction of Schottky diode parameters from forward current-voltage characteristics, Applied Physics Letters, 58, 382.
  • Cimilli, F.E., Efeoğlu, H., Sağlam, M., Türüt, A. 2009a. Temperature-dependent current–voltage and capacitance–voltage characteristics of the Ag/n-InP/In Schottky diodes, Journal of Material Science Material Electronics, 20, 105–112.
  • Cimilli, F.E., Sağlam, M., Efeoğlu, H., Türüt, A. 2009b. Temperature-dependent current–voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height, Physica B, 404, 1558-1562.
  • Cimilli, F.E., Sağlam, M., Türüt, A. 2007. Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diodes, Semiconductor Science and Technology 22, 851–854.
  • Çakici, T., Güzeldir, B., Sağlam, M. 2015. Temperature dependent of electrical characteristics of Au/n-GaAs/In Schottky diode with In2S3 interfacial layer obtained by using spray pyrolysis method, Journal of Alloys and Compounds, 646, 954-965.
  • Çetin, H., Ayyildiz, E. 2005. Temperature dependence of electrical parameters of the Au/n-InP Schottky barrier diodes, Semiconductor Science and Technology 20, 625.
  • Çetinkara, H.A., Türüt, A.D. Zengin, M, Erel, S. 2003. The energy distribution of the interface state density of Pb/p-Si Schottky contacts exposed to clean room air, Applied Surface Science 207, 190.
  • Ejderha, K., Yıldırım, N., Türüt, A., Abay, B. 2010. Influence of interface states on the temperature dependence and current–voltage characteristics of Ni/p-InP Schottky diodes, Superlattices and Microstructures, 47, 241-252.
  • El-Nahass, M.M., Zeyada, H.M., Abd-El-Rahman, K.F., Darwish, A.A.A. 2007. Fabrication and characterization of 4-tricyanovinyl-N,N-diethylaniline/p-silicon hybrid organic–inorganic solar cells, Solar Energy Materials and Solar Cells, 91 1120.
  • Gür, E., Tüzemen, S., Kılıç, B., Coskun C. 2007. High-temperature Schottky diode characteristics of bulk ZnO, Journal of Physics: Condensed Matter 19, 196206.
  • Horváth, Z.S.J., Rakovics, V., Püspöki, S. 2003. Schottky Junction on n-type InP for Zero Bias Microwave Detectors, Physica Status Solidi (c), 3, 916-921.
  • Huang, S., Shen, B., Wang, M.J., Xu, F.J., Wang, Y., Yang, H.Y., Lin, F., Lu, L., Chen, Z.P., Qin, Z.X., Yang, Z.J., Zhang, G.Y. 2007. Current transport mechanism of Au/Ni/GaN Schottky diodes at high temperatures, Applied Physics Letters, 91, 072109-3.
  • Kim, D.M., Kim, D.H., Lee, S.Y. 2007. Palladium composite membranes using supercritical CO2 impregnation method for direct methanol fuel cells, Solid-State Electronics, 51, 865.
  • Kumar, S., Katharria, Y.S., Kumar, S., Kanjilal, D. 2006. Temperature-dependent barrier characteristics of swift heavy ion irradiated Au∕n-Si Schottky structure, Journal of Applied Physics 100, 113723.
  • Osvald, J., Horvath, Z.J. 2004. Theoretical study of the temperature dependence of electrical characteristics of Schottky diodes with an inverse near-surface layer, Applied Surface Science, 234, 349-354.
  • Patel, S.S., Patel, B.H., Patel, T.S. 2008. Characteristics of Al/p-AgGaTe2 polycrystalline thin film Schottky barrier diode, Crystal Research and Technology 43, 542-546.
  • Pirri, C.F., Ferrero, S., Scaltrito, L., Perrone, D., Guastella, S., Furno, M., Richieri, G., Merlin, L. 2006. Intrinsic 4H-SiC parameters study by temperature behaviour analysis of Schottky diodes, Microelectronic Engineering 83, 86.
  • Qasrawi, A.F. 2006. Fabrication and characterization of TO/GaSe/Ag, Au Schottky diodes, Semiconductor Science and Technology 21, 794. Rhoderick, E.H., Williams, R.H. 1988. Metal-Semiconductor Contacts, 2ndedn. Clerendon, Oxford, 1-225.
  • Sağlam, M., Ayyıldız, E., Gümüş, A., Türüt, A., Efeoğlu, H., Tüzemen, S. 1996. Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes, Applied Physics A 62, 269.
  • Sing, A., Reinhardt, K.C., Anderson, W.A. 1990. Temperature dependence of the electrical characteristics of Yb/p‐InP tunnel metal‐insulator‐semiconductor junctions, Journal of Applied Physics 68, 3475.
  • Schmitsdorf, R.F., Mönch, W. 1999. Influence of the interface structure on the barrier height of homogeneous Pb/n-Si111 Schottky contacts, The European Physical Journal B, 7, 457-466.
  • Song, Y.P., Van Meirhaeghe, R.L., Laflére, W.H., Cardon, F. 1986. On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers, Solid-State Electronics 29, 633.
  • Sönmezoğlu, S. 2013. Processing and Electrical Characterization of Metal-Oxide-Semiconductor Structures Prepared by DBSA-Doped TiO2 Nanoparticles, Current Nanoscience, 9, 39-45.
  • Sullivan, J.P., Tung, R.T., Pinto, M.R., Graham, W.R. 1991. Electron transport of inhomogeneus Schottky barriers: A numerical study, Journal of Applied Physics, 70, 7403-7424.
  • Tung, R.T. 1992. Electron transport of inhomogeneous Schottky barriers, Applied Physics Letters, 58, 2821-23.
  • Tung, R.T. 2001. Recent advances in Schottky barrier concepts, Materials Science and Enginering R, 35, 1-138.
  • Tung, R.T., Levi, A.F.J., Sullivan, J.P., Schrey, F. 1991. Schottky-Barrier Inhomogeneity at Epitaxial NiSi2 Interfaces on Si 100, Physical Review Letters, 66, 1.
  • Türüt, A., Yalçın, N., Sağlam, M. 1992. Parameter extraction from non-ideal C−V characteristics of a Schottky diode with and without interfacial layer, Solid-State Electronics 35 835.
  • Van Meirhaeghe, R.L., Laflére, W.H., Cardon, F. 1994. Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts, Journal of Applied Physics, 76, 403.
  • Wang, K., Ye, M. 2009. Parameter determination of Schottky-barrier diode model using differential evolution, Solid-State Electronics 53, 234. Werner, J.H., Güttler H.H. 1991. Barrier inhomogeneities at Schottky contacts, Journal of Applied Physics, 69, 1522.
  • Williams, R.H., Robinson, G.Y. 1985. In Physics and Chemistry of III–V Compound Semiconductor Interfaces, ed. by C.W. Wilmsen Plenum Press, New York
  • Wilmsen, C.W. 1985. Physics and Chemistry of III-V Compound Semiconductor Interface New York: Plenum.
  • Yakuphanoglu, F. 2007. The current–voltage characteristics and inhomogeneous-barrier analysis of ddq/p-type Si/Al diode with interfacial layer, Physica B, 389, 306.
  • Zhu, S., Van Meirhaeghe, R.L. Forment, S., Ru, G. Li, B. 2004. Effects of the annealing temperature on Ni silicide/n-Si 100 Schottky contacts, Solid-State Elecronics 48, 29.

Cu/n-InP/In Schottky Diyotların Sıcaklığa Bağlı Akım-Voltaj ve Kapasite-Voltaj Ölçümlerinden Elde Edilen Karakteristik Parametrelerinin İncelenmesi

Year 2018, Volume: 11 Issue: 3, 381 - 393, 30.12.2018
https://doi.org/10.18185/erzifbed.376279

Abstract

Schottky
engel diyotları n-tipi InP (100) yarıiletkeni kullanılarak elde edildi. Ohmik
kontaklar In metali buharlaştırıldıktan sonra 320
oC’de ve N2
ortamında tavlanarak yapıldı. Schottky kontakları 0,5 mm çapında ve
yarıiletkenin ön yüzünde imal edildi. I–V karakteristikleri 20K ve 300K
sıcaklık aralığında sıcaklığın bir fonksiyonu olarak ölçüldü. Deneysel I–V
karakteristiklerinin Cu/n-tipi Inp Schottky diyotları için geleneksel
Termiyonik Emisyon (TE) teorisi ile uyum içerisinde olduğu gözlemlendi.
Cu/n-tipi InP Schottky diyotlarının kapasite-gerilim (C-V) ölçümleri 300-10 K
sıcaklık aralığında ve 10K adımlarla 1 MHz frekansta alındı. Numune sıcaklığına
bağlı olarak diyotlarımızın elektriksel karakterizasyonunda değişikliklerin
olduğu tespit edildi. Cu/n-InP/In Schottky kontakların sıcaklığa bağlı engel
karakteristiklerinin “engel inhomojenliği modeline” uyduğu belirlendi. 20-150 K
ve 150-300 K sıcaklık aralığında Schottky diyotlara iki farklı ortalama engel
yüksekliğinin eşlik etmesi engel yüksekliğinin çift Gaussian modeli ile uyum
içerisindedir. Ayrıca sıcaklığa bağlı I-V ve C-V karakteristiklerinden seri
direnç, taşıyıcı konsantrasyonu, difüzyon potansiyeli ve Fermi enerjisi gibi
parametreleri de hesaplandı.


References

  • Ahaitouf, A., Losson, E., Bath, A. 2000. On the determination of interface state density in n-InP Schottky structures by current–voltage measurements: Comparison with DLTS results, Solid-State Electronics, 44, 515-520.
  • Al-Ahmadi, N.A., Ebrahim, F.A., Al-Jawhari, H.A., Mari R.H., Henini, M. 2017. Impact of doping on the performance of p-type Be-doped Al 0.29 Ga 0.71 As Schottky diodes, Modern Electronic Materials, 3 2, 66-71.
  • Ahmad, Z., Sayyad, M.H. 2009. Extraction of electronic parameters of Schottky diode based on an organic semiconductor methyl-red. Physica E 41 631.
  • Arehart, A.R., Moran, B., Speck J.S., Mishra U.K., DenBaars, S.P., Ringel, S.A. 2006. Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics. Applied Physics.100, 023709.
  • Biber, M. 2003. Low-temperature current-voltage characteristics of MIS Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky diodes, Physica B, 325, 138-148.
  • Büyükbaş Uluşan, A., Tataroğlu, A., Azizian, Y., Altındal, Ş. 2017. On the conduction mechanisms of Au/ Cu2O–CuO–PVA/n-SiMPS Schottky barrier diodes SBDs using current–voltage–temperatureI–V–T characteristics, Journal of Materials Science: Materials in Electronics, 29,159-170.
  • Chand, S., Kumar, J. 1997. Electron transport and barrier inhomogeneities in palladium silicide Schottky diodes. Applied Physics A,65, 497.
  • Chand, S., Kumar, J. 1996. Current transport in Pd2Si/N-Si 100 Schottky barrier diodes at low temperatures, Applied Physics A, 63, 171-178.
  • Chand, S., Kumar, J. 1997. Effect of barrier height distribution on the behavior of a Schottky diode, Journal of Applied Physics, 82 10, 5005-5010.
  • Cheung, S.K., Cheung, N.W. 1986. Extraction of Schottky diode parameters from forward current-voltage characteristics, Applied Physics Letters, 58, 382.
  • Cimilli, F.E., Efeoğlu, H., Sağlam, M., Türüt, A. 2009a. Temperature-dependent current–voltage and capacitance–voltage characteristics of the Ag/n-InP/In Schottky diodes, Journal of Material Science Material Electronics, 20, 105–112.
  • Cimilli, F.E., Sağlam, M., Efeoğlu, H., Türüt, A. 2009b. Temperature-dependent current–voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height, Physica B, 404, 1558-1562.
  • Cimilli, F.E., Sağlam, M., Türüt, A. 2007. Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diodes, Semiconductor Science and Technology 22, 851–854.
  • Çakici, T., Güzeldir, B., Sağlam, M. 2015. Temperature dependent of electrical characteristics of Au/n-GaAs/In Schottky diode with In2S3 interfacial layer obtained by using spray pyrolysis method, Journal of Alloys and Compounds, 646, 954-965.
  • Çetin, H., Ayyildiz, E. 2005. Temperature dependence of electrical parameters of the Au/n-InP Schottky barrier diodes, Semiconductor Science and Technology 20, 625.
  • Çetinkara, H.A., Türüt, A.D. Zengin, M, Erel, S. 2003. The energy distribution of the interface state density of Pb/p-Si Schottky contacts exposed to clean room air, Applied Surface Science 207, 190.
  • Ejderha, K., Yıldırım, N., Türüt, A., Abay, B. 2010. Influence of interface states on the temperature dependence and current–voltage characteristics of Ni/p-InP Schottky diodes, Superlattices and Microstructures, 47, 241-252.
  • El-Nahass, M.M., Zeyada, H.M., Abd-El-Rahman, K.F., Darwish, A.A.A. 2007. Fabrication and characterization of 4-tricyanovinyl-N,N-diethylaniline/p-silicon hybrid organic–inorganic solar cells, Solar Energy Materials and Solar Cells, 91 1120.
  • Gür, E., Tüzemen, S., Kılıç, B., Coskun C. 2007. High-temperature Schottky diode characteristics of bulk ZnO, Journal of Physics: Condensed Matter 19, 196206.
  • Horváth, Z.S.J., Rakovics, V., Püspöki, S. 2003. Schottky Junction on n-type InP for Zero Bias Microwave Detectors, Physica Status Solidi (c), 3, 916-921.
  • Huang, S., Shen, B., Wang, M.J., Xu, F.J., Wang, Y., Yang, H.Y., Lin, F., Lu, L., Chen, Z.P., Qin, Z.X., Yang, Z.J., Zhang, G.Y. 2007. Current transport mechanism of Au/Ni/GaN Schottky diodes at high temperatures, Applied Physics Letters, 91, 072109-3.
  • Kim, D.M., Kim, D.H., Lee, S.Y. 2007. Palladium composite membranes using supercritical CO2 impregnation method for direct methanol fuel cells, Solid-State Electronics, 51, 865.
  • Kumar, S., Katharria, Y.S., Kumar, S., Kanjilal, D. 2006. Temperature-dependent barrier characteristics of swift heavy ion irradiated Au∕n-Si Schottky structure, Journal of Applied Physics 100, 113723.
  • Osvald, J., Horvath, Z.J. 2004. Theoretical study of the temperature dependence of electrical characteristics of Schottky diodes with an inverse near-surface layer, Applied Surface Science, 234, 349-354.
  • Patel, S.S., Patel, B.H., Patel, T.S. 2008. Characteristics of Al/p-AgGaTe2 polycrystalline thin film Schottky barrier diode, Crystal Research and Technology 43, 542-546.
  • Pirri, C.F., Ferrero, S., Scaltrito, L., Perrone, D., Guastella, S., Furno, M., Richieri, G., Merlin, L. 2006. Intrinsic 4H-SiC parameters study by temperature behaviour analysis of Schottky diodes, Microelectronic Engineering 83, 86.
  • Qasrawi, A.F. 2006. Fabrication and characterization of TO/GaSe/Ag, Au Schottky diodes, Semiconductor Science and Technology 21, 794. Rhoderick, E.H., Williams, R.H. 1988. Metal-Semiconductor Contacts, 2ndedn. Clerendon, Oxford, 1-225.
  • Sağlam, M., Ayyıldız, E., Gümüş, A., Türüt, A., Efeoğlu, H., Tüzemen, S. 1996. Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes, Applied Physics A 62, 269.
  • Sing, A., Reinhardt, K.C., Anderson, W.A. 1990. Temperature dependence of the electrical characteristics of Yb/p‐InP tunnel metal‐insulator‐semiconductor junctions, Journal of Applied Physics 68, 3475.
  • Schmitsdorf, R.F., Mönch, W. 1999. Influence of the interface structure on the barrier height of homogeneous Pb/n-Si111 Schottky contacts, The European Physical Journal B, 7, 457-466.
  • Song, Y.P., Van Meirhaeghe, R.L., Laflére, W.H., Cardon, F. 1986. On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers, Solid-State Electronics 29, 633.
  • Sönmezoğlu, S. 2013. Processing and Electrical Characterization of Metal-Oxide-Semiconductor Structures Prepared by DBSA-Doped TiO2 Nanoparticles, Current Nanoscience, 9, 39-45.
  • Sullivan, J.P., Tung, R.T., Pinto, M.R., Graham, W.R. 1991. Electron transport of inhomogeneus Schottky barriers: A numerical study, Journal of Applied Physics, 70, 7403-7424.
  • Tung, R.T. 1992. Electron transport of inhomogeneous Schottky barriers, Applied Physics Letters, 58, 2821-23.
  • Tung, R.T. 2001. Recent advances in Schottky barrier concepts, Materials Science and Enginering R, 35, 1-138.
  • Tung, R.T., Levi, A.F.J., Sullivan, J.P., Schrey, F. 1991. Schottky-Barrier Inhomogeneity at Epitaxial NiSi2 Interfaces on Si 100, Physical Review Letters, 66, 1.
  • Türüt, A., Yalçın, N., Sağlam, M. 1992. Parameter extraction from non-ideal C−V characteristics of a Schottky diode with and without interfacial layer, Solid-State Electronics 35 835.
  • Van Meirhaeghe, R.L., Laflére, W.H., Cardon, F. 1994. Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts, Journal of Applied Physics, 76, 403.
  • Wang, K., Ye, M. 2009. Parameter determination of Schottky-barrier diode model using differential evolution, Solid-State Electronics 53, 234. Werner, J.H., Güttler H.H. 1991. Barrier inhomogeneities at Schottky contacts, Journal of Applied Physics, 69, 1522.
  • Williams, R.H., Robinson, G.Y. 1985. In Physics and Chemistry of III–V Compound Semiconductor Interfaces, ed. by C.W. Wilmsen Plenum Press, New York
  • Wilmsen, C.W. 1985. Physics and Chemistry of III-V Compound Semiconductor Interface New York: Plenum.
  • Yakuphanoglu, F. 2007. The current–voltage characteristics and inhomogeneous-barrier analysis of ddq/p-type Si/Al diode with interfacial layer, Physica B, 389, 306.
  • Zhu, S., Van Meirhaeghe, R.L. Forment, S., Ru, G. Li, B. 2004. Effects of the annealing temperature on Ni silicide/n-Si 100 Schottky contacts, Solid-State Elecronics 48, 29.
There are 43 citations in total.

Details

Primary Language Turkish
Subjects Engineering
Journal Section Makaleler
Authors

Fulya Esra Cimilli Çatır

Publication Date December 30, 2018
Published in Issue Year 2018 Volume: 11 Issue: 3

Cite

APA Cimilli Çatır, F. E. (2018). Cu/n-InP/In Schottky Diyotların Sıcaklığa Bağlı Akım-Voltaj ve Kapasite-Voltaj Ölçümlerinden Elde Edilen Karakteristik Parametrelerinin İncelenmesi. Erzincan University Journal of Science and Technology, 11(3), 381-393. https://doi.org/10.18185/erzifbed.376279