FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

Year 2019, Volume: 20 , 92 - 98, 16.12.2019

Gonca Ilgu Buyuk , Saliha Ilıcan

https://doi.org/10.18038/estubtda.642315

Abstract

In
this work, Er doped ZnO films and silicon substrates were used as n-type and
p-type semiconductors, respectively. In order to obtained p-Si/n-ZnO:Er heterojunction structures, top (aluminum; Al) and
bottom (gold; Au) metal contacts were deposited using a evaporator and sputter,
respectively. The electrical characterization of these heterojunctions were investigated
by current–voltage (I–V)
characteristics at room temperature and in dark. It was observed that Au/p-Si/n-ZnO:Er/Al heterojunction
structures have rectifying properties. The diode parameters such as barrier
height, series resistance and ideality factor were investigated by using I–V measurement data. These parameters
were determined by using different methods.

Keywords

ZnO, Heterojunctions, Diode parameters

Supporting Institution

Eskisehir Technical University

Project Number

1501F032

Thanks

This work was supported by Eskisehir Technical University Commission of Research Projects under Grant no. 1501F032. This study was conducted as part of the Doctoral Thesis of Gonca Ilgu Buyuk.

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