A COMPREHENSIVE DETERMINING OF CAPACITANCE -VOLTAGE PARAMETERS OF ELECTRONIC DEVICES WITH METAL AND p-Si JUNCTION

Yıl 2020, , 247 - 256, 31.08.2020

Fatih Mehmet Coşkun

https://doi.org/10.20290/estubtdb.633238

Öz

Al-p-Si-Al structures were fabricated and temperature dependent capacitance versus voltage measurements were performed in this study. The Al contacts were grown by the sputtering method and then capacitance-voltage characteristics of the devices were performed with forward and reverse biases. According to this measurements, the C-2 –V plots were conducted. With the help of those calculation, the barrier height vs temperature (ΦCV – T), the carrier concentration vs temperature (NA – T) and the depletion width vs temperature (w – T) graphs were plotted. In conclusion, it has been seen that the ΦCV and w decreased, and NA almost remained constant with increasing temperature.

Anahtar Kelimeler

Heterojunctions,, Capacitance-Voltage,, Barrier Height,

Teşekkür

The author would like to express his sincere thanks to Prof. Abdulmecit Türüt and Prof. Hasan Efeoğlu for their many valuable contributions.

A COMPREHENSIVE DETERMINING OF CAPACITANCE -VOLTAGE PARAMETERS OF ELECTRONIC DEVICES WITH METAL AND p-Si JUNCTION

Öz

Al-p-Si-Al structures were
fabricated and temperature dependent capacitance versus voltage measurements
were performed in this study. The Al contacts were grown by the sputtering
method and then capacitance-voltage characteristics of the devices were
performed with forward and reverse biases. According to this measurements, the
C^-2 vs V plots were conducted. With the help of those calculation,
the barrier height vs temperature (Φ_CV
vs T), the carrier concentration vs temperature (N_A vs T) and
the depletion width vs temperature (w
vs T) graphs were plotted. In
conclusion, it has been seen that the Φ_CV
and w decreased, and N_A remained constant with
increasing temperature.

0000-0001-8040-8054

Anahtar Kelimeler

Heterojunctions, Capacitance-Voltage, Barrier Height

Kaynakça

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