Saf ZnO ve katkılı ZnO:Alx:Mny ( x=1% at., y=1%, 2%, 3%, 5% at.) yarı iletken ince filmlerin yapısal ve optiksel özellikleri ile üretilen diyotların elektriksel özelliklerinin araştırılması

Yıl 2023, , 163 - 174, 21.06.2022

Nihat Demirbilek , Mehmet Kaya , Fahrettin Yakuphanoğlu

https://doi.org/10.17341/gazimmfd.1001776

Cited By: 1

Öz

Bu çalışmada, katkısız ZnO ve Al, Mn katkılı ZnO yarı iletken ince filmler ve p-tipi Si diyotlar sol-jel spin kaplama tekniği kullanılarak üretildi. Üretilen ince filmlerin yapısal ve optiksel özellikleri sırasıyla SEM, XRD ve UV-Spektrofotometre kullanılarak incelendi. İnce filmlerin kristal yapısının altıgen wurtzite yapıya sahip olduğu ve artan Mn katkısı ile numunelerin optik bant aralığı enerjilerinin azaldığı belirlendi. Termoiyonik emisyon modeli kullanılarak diyotların deneysel sıfır-besleme akım bariyer yüksekliği (Φb(I-V)), doğrultma oranı, idealite faktörü ve Ion/Ioff parametreleri hesaplandı. Üretilen Al/p-Si/ZnO:Al:Mn/Al diyotunun yüksek doğrultma oranının ve Ion/Ioff değerlerinin sırasıyla 1,56x105 ve 1,54x104 olduğu ve ışığa duyarlı davranışlar sergilediği belirlendi. Ayrıca, Al/p-Si/ZnO:Al:Mn/Al diyotunun kapasitans bariyer yüksekliği (Φb(C-V)), kurulma voltajı (Vbi), difüzyon potansiyeli (Vd), donör konsantrasyonu (Nd) ve tükenme tabakası genişliği (Wd) değerleri 1MHz frekans altında çizilen C-2-V grafiği kullanılarak hesaplandı. Elde edilen sonuçlar üretilen diyotların optoelektronik uygulamalarda fotodiyot veya fotosensör olarak kullanılabileceğini göstermektedir.

Anahtar Kelimeler

Yarıiletken, ZnO, Fotodiyot, Optiksel Özellikler

Destekleyen Kurum

Fırat Üniversitesi

Proje Numarası

FF16.24

Teşekkür

Bu çalışma Fırat Üniversitesi tarafından doktora tezi için desteklenmiştir (Proje No. FF16.24).

Kaynakça

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