Gallium Oxide: A Rising Star in The Semiconductor Realm

Year 2019, Volume: 32 Issue: 4, 1092 - 1095, 01.12.2019

Matteo Bosi , Roberto Fornari

https://doi.org/10.35378/gujs.647201

Cited By: 2

https://izlik.org/JA24SR93RA

Abstract

A “new” semiconductor can gather the interest of the scientific
community only when it adds unprecedented properties to the ones already
established, with silicon universally considered as the most widespread and the
primary benchmark. In the last decades, this happened for example with III-V
and III-N semiconducting compounds, capable of emitting and absorbing light and
to process signals of much higher frequencies than silicon. More recently, this
newly happened with silicon carbide, which can work at higher voltages and
power than previously available semiconductors, and with layered transition
metal dichalcogenides, for their unusual properties and potential applications
in nanoelectronics.

Keywords

Gallium Oxide

References

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