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ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING

Year 2004, Volume: 17 Issue: 1, 31 - 35, 11.08.2010

Mehmet Kasap Selim Acar , Bora Alkan

https://izlik.org/JA88CU84XX

Abstract

To explain the behavior of Hall mobility versus temperature T behavior in In0.51Ga0.49As and In0.60Ga0.40As detailed calculations have been carried out based on Kubo formula by taking the dislocation scattering as the dominant scattering mechanism. A good agreement has been obtained between the theory and the experiment.

 Key Words: Hall mobility, dislocation scattering, Kubo formula

 

Keywords

Hall mobility dislocation scattering Kubo formula

Year 2004, Volume: 17 Issue: 1, 31 - 35, 11.08.2010

Mehmet Kasap Selim Acar , Bora Alkan

https://izlik.org/JA88CU84XX

Abstract

There are 0 citations in total.

Details

Primary Language English
Authors

Mehmet Kasap This is me

Selim Acar

Bora Alkan This is me

Publication Date August 11, 2010
IZ https://izlik.org/JA88CU84XX
Published in Issue Year 2004 Volume: 17 Issue: 1

Cite

APA Kasap, M., Acar, S., & Alkan, B. (2010). ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science, 17(1), 31-35. https://izlik.org/JA88CU84XX
AMA 1.Kasap M, Acar S, Alkan B. ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science. 2010;17(1):31-35. https://izlik.org/JA88CU84XX
Chicago Kasap, Mehmet, Selim Acar, and Bora Alkan. 2010. “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”. Gazi University Journal of Science 17 (1): 31-35. https://izlik.org/JA88CU84XX.
EndNote Kasap M, Acar S, Alkan B (August 1, 2010) ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science 17 1 31–35.
IEEE [1]M. Kasap, S. Acar, and B. Alkan, “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”, Gazi University Journal of Science, vol. 17, no. 1, pp. 31–35, Aug. 2010, [Online]. Available: https://izlik.org/JA88CU84XX
ISNAD Kasap, Mehmet - Acar, Selim - Alkan, Bora. “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”. Gazi University Journal of Science 17/1 (August 1, 2010): 31-35. https://izlik.org/JA88CU84XX.
JAMA 1.Kasap M, Acar S, Alkan B. ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science. 2010;17:31–35.
MLA Kasap, Mehmet, et al. “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”. Gazi University Journal of Science, vol. 17, no. 1, Aug. 2010, pp. 31-35, https://izlik.org/JA88CU84XX.
Vancouver 1.Kasap M, Acar S, Alkan B. ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science [Internet]. 2010 Aug. 1;17(1):31-5. Available from: https://izlik.org/JA88CU84XX