ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING

Mehmet Kasap; Selim Acar; Bora Alkan

EN

ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING

Abstract

To explain the behavior of Hall mobility versus temperature T behavior in In0.51Ga0.49As and In0.60Ga0.40As detailed calculations have been carried out based on Kubo formula by taking the dislocation scattering as the dominant scattering mechanism. A good agreement has been obtained between the theory and the experiment.

Key Words: Hall mobility, dislocation scattering, Kubo formula

Keywords

Hall mobility, dislocation scattering, Kubo formula

Details

Primary Language

English

Subjects

-

Journal Section

-

Authors

Mehmet Kasap This is me

Selim Acar

Bora Alkan This is me

Publication Date

August 11, 2010

Submission Date

August 11, 2010

Acceptance Date

-

Published in Issue

Year 2004 Volume: 17 Number: 1

IZ

https://izlik.org/JA88CU84XX

Cite

RIS / Bibtex

APA

Kasap, M., Acar, S., & Alkan, B. (2010). ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science, 17(1), 31-35. https://izlik.org/JA88CU84XX

AMA

1.Kasap M, Acar S, Alkan B. ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science. 2010;17(1):31-35. https://izlik.org/JA88CU84XX

Chicago

Kasap, Mehmet, Selim Acar, and Bora Alkan. 2010. “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”. Gazi University Journal of Science 17 (1): 31-35. https://izlik.org/JA88CU84XX.

EndNote

Kasap M, Acar S, Alkan B (August 1, 2010) ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science 17 1 31–35.

IEEE

[1]M. Kasap, S. Acar, and B. Alkan, “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”, Gazi University Journal of Science, vol. 17, no. 1, pp. 31–35, Aug. 2010, [Online]. Available: https://izlik.org/JA88CU84XX

ISNAD

Kasap, Mehmet - Acar, Selim - Alkan, Bora. “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”. Gazi University Journal of Science 17/1 (August 1, 2010): 31-35. https://izlik.org/JA88CU84XX.

JAMA

1.Kasap M, Acar S, Alkan B. ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science. 2010;17:31–35.

MLA

Kasap, Mehmet, et al. “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”. Gazi University Journal of Science, vol. 17, no. 1, Aug. 2010, pp. 31-35, https://izlik.org/JA88CU84XX.

Vancouver

1.Mehmet Kasap, Selim Acar, Bora Alkan. ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science [Internet]. 2010 Aug. 1;17(1):31-5. Available from: https://izlik.org/JA88CU84XX