Analysis of Hopping Conduction and Space Charge Limited Currents in Nearly Ideal Metal/Semiconductor Contacts

Abstract

We have formed a nearly ideal Au/n-Si Schottky contact and deposited gold (Au) metal on n-Si (100) using thermally evaporation method for an explanation of space charge limited current (SCLC) from current-voltage (I-V) characteristic, interface trap density from capacitance-conductance-voltage (C-G-V) characteristics and hopping conduction from conductance-frequency (G-f) characteristic in nearly ideal metal/semiconductor contacts. The device showed good intimate rectifying behavior. To observe the SCLC mechanism and determine interface trap density of the sample, the log (I)−log (V) and C-G-V characteristics are plotted. The interface trap density values for low frequency (5 kHz) and high frequency (1 MHz) are determined as 4.98 x 1014 eV-1 cm-3 and 7.81 x 1012 eV-1 cm3, respectively. At the same time the main diode parameters such as ideality factor and barrier height are determined as 1.048 and 0.807 eV, respectively. These diode parameters refer a nearly ideal metal-semiconductor contact.

Keywords

• Intimate contact
• I-V
• Space charge limited current
• Pool-Frenkel effect
• ideality factor
• Schottky barrier height.

References

1. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. Wiley, New York, 1981. [2] E.H. Rhoderick, R.H. Semiconductor Contacts, Clarendon Press, Oxford, 1988. Williams, Metal–
2. N. Tuğluoğlu, B. Barış, H. Gürel, S. Karadeniz, Ö. F. Yüksel, J. Alloys Compd. 582 (2014) 696.
3. A.A.M. Farag, B. Gündüz, F. Yakuphanoğlu, W.A. Farooq, Synth. Met. 160 (2010) 2559.
4. Sandeep Kumar, D. Kanjilal, Nucl. Instrum. Methods Phys. Res., Sect. B:Beam Interact. Mater. Atoms 248 (2006) 109.
5. M.K. Hudait, S.B. Krupanidhi, Physica B 307 (2001) 125.
6. I.M. Afandiyeva, S. Demirezen, Ş. Altındal J. Alloys Compd. 552 (2013) 423.
7. S. T. Ali, A. Kumar, D. N. Bose, J. Mater. Sci. 30 (1995) 5031.
8. W. Chandra, L. K. Ang, K. L. Pey, and C. M. Nug, Appl. Phys. Lett. 90 (2007) 153505.

9. M.A. Lampert, P. Mark, Current Injection in Solids, Academic Press, New York, London, 1970.
10. M.A. Lampert, Rep. Prog. Phys. 27 (1964) 329.
11. A. Türüt, M. Sağlam, Physica B 179 (1992) 285.
12. E.H. Nicollian, A. Goetzberger, Bell. Syst. Tech. J. 46 (1967) 1055.
13. M. Çakar, A. Türüt, Synth. Met. 138 (2003) 549.
14. W.A. Hill, C.C. Coleman, Solid State Electron. 23 (1980) 987.