THERMOELECTRIC CHARACTERIZATION OF N-TYPE (Bi2Te3)Se3 SEMICONDUCTORS IN A TEMPERATURE RANGE 11-373 K

Year 2005, Volume: 18 Issue: 3, 481 - 487, 12.08.2010

Raşit Ahıska Eyüp Güler Selim Acar , Mehmet Kasap

Abstract

ABSTRACT

The two n-type (Bi2Te3)Se3 semiconductor samples were grown from Bi2Te3 and Bi2Se3 components using traveling heater and pulverized methods. Thermoelectric properties such as electrical conductivity and Seebeck coefficient have been measured in a temperature range 11-373 K using Harman technique. At the room temperature, the Z parameter has been calculated as 4.1x10-3 K-1 and 2.4x10-3 K-1 for the samples grown by the traveling heater methods, respectively.

Keywords

Key Words: Traveling heater and heat pressing methods, Harman technique, thermoelectric properties

N-TİPİ (Bi2Te3)Se3 YARIİLETKEN KRİSTALLERİN 11-373 K SICAKLIK ARALIĞINDA TERMOELEKTRİK KARAKTERİZASYONU

Abstract

İki adet n-tipi (Bi2Te3)Se3 yarıiletkeni Bi2Te3 ve Bi2Se3 bileşimlerinden, bölge eritme ve presleme yöntemi ile büyütüldü. Bu yarıiletken numunelerin termoelektrik özellikleri; elektriksel iletkenlik ve Seebeck kat sayısı 11-373 K sıcaklık aralığında Harman tekniği kullanılarak ölçüldü. Oda sıcaklığında, Z parametresi bölge eritme yöntemi ile büyütülen numune için 4,1x10-3 K-1presleme yöntemi ile büyütülen yarıiletken numune için 2,4x10-3 K-1 olarak hesaplandı

Keywords

Bölge eritme ve presleme yöntemi, Harman tekniği, Termoelektrik özellikler

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