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A Comparison Electronic Specifications of the MS & MPS type Schottky Diodes (SDs) via Utilizing Voltage-Current (V-I) Characteristics

Year 2023, , 62 - 69, 28.03.2023
https://doi.org/10.54287/gujsa.1212696

Abstract

The effects of the application of the (TeO2:Cu-PVP) interface to the Al/p-Si (MS) type SD on the performance of the new Al/(TeO2:Cu doped PVP)/p-Si (MPS) SD were reviewed using forward and reverse bias V-I measurements. The thermionic emission (TE) and Cheung & Cheung functions were employed to ascertain the influences of an additional organic interfacial layer on the comparative outcomes of this research. Thus, some essential electrical attributes such as saturation current (Is), ideality factor (n), rectification-ratio (R.R.=Iforward/Ireverse), barrier height B.H. (Φbo), and series/shunt resistances (Rs/Rsh) were computed. Furthermore, the density of surface states (Nss) was acquired from the V-I plots according to the Card & Rhoderick method. The observed experimental results indicated that the (TeO2:Cu-PVP) inter-layer enhanced the quality of MS type SD as respects obtained low reverse current, Nss, Rs, and high Rsh and R.R. values. All these results indicate that (TeO2:Cu-PVP) inter-layer can be used successfully instead of conventional insulators for its favored specifications like easy fabrication processes, low cost, and flexibility features.

Supporting Institution

TUBITAK_BİDEB

Project Number

121C396

References

  • Altındal, Ş., Sevgili, Ö.,  Azizian-Kalandaragh, Y. (2019). The structural and electrical properties of the Au/n-Si (MS) diodes with nanocomposites interlayer (Ag-doped ZnO/PVP) by using the simple ultrasound-assisted method. IEEE Transactions on Electron Devices, 66(7), 3103-3109. doi:10.1109/TED.2019.2913906
  • Altındal Yerişkin, S. (2019). The investigation of effects of (Fe2O4-PVP) organic-layer, surface states, and series resistance on the electrical characteristics and the sources of them. Journal of Material Sciences: Materials in Electronics, 30, 17032-17039. doi:10.1007/s10854-019-02045-x
  • Barkhordari, A., Özçelik, S., Altındal, Ş., Pirgholi-Givi, G., Mashayekhi, H.,  Azizian Kalandaragh., Y. (2021). The effect of PVP: BaTiO3 interlayer on the conduction mechanism and electrical properties at MPS structures. Physica Scripta, 96(8), 085805. doi:10.1088/1402-4896/abeba8
  • Bindra, K., Bookey, H., Kar, A., Wherrett, B., Liu, X.,  Jha, A. (2001). Nonlinear optical properties of chalcogenide glasses: Observation of multiphoton absorption. Applied Physics Letters, 79, 1939–1941. doi:10.1063/1.1402158
  • Card, H. C.,  Rhoderick, E. H. (1971). Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. Journal of Physics D: Applied Physics, 4(10), 1589-1601. doi:10.1088/0022-3727/4/10/319
  • Cheung, S. K.,  Cheung, N. W. (1986). Extraction of Schottky diode parameters from forward current‐voltage characteristics. Applied Physics Letters, 49, 85. doi:10.1063/1.97359
  • Coste, S., Lecomte, A., Thomas, P., Merle-M´ejean, T.,  Champarnaud-Mesjard, J. C. (2007). Sol-gel synthesis of TeO2-based materials using citric acid as hydrolysis modifier. Journal of Sol-Gel Science and Technology, 41, 79–86. doi:10.1007/s10971-006-0117-6
  • Çetinkaya, H. G., Demirezen, S., Altındal Yerişkin, S. (2021). Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes. Physica B: Condensed Matter, 621, 413207. doi:10.1016/j.physb.2021.413207
  • Demirezen, S.,  Altındal Yerişkin, S. (2020). A detailed comparative study on electrical and photovoltaic characteristics of Al/p-Si photodiodes with coumarin-doped PVA interfacial layer: the effect of doping concentration. Polymer Bulletin, 77, 49-71; doi:10.1007/s00289-019-02704-3
  • Demirezen, S., Altındal, Ş., Azizian-Kalandaragh, Y., & Akbaş, A. M. (2022) A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance (Rs) effects. Physica Scripta, 97(5), 055811. doi:10.1088/1402-4896/ac645f
  • Nicollian, E. H.,  Brews, J. R. (1982). MOS (Metal Oxide Semiconductor) Physics and Technology. New York, USA: Wiley.
  • Orak., I., Koçyiğit, A.,  Altındal, Ş. (2017). Electrical and dielectric characterization of Au/ZnO/n-Si device depending frequency and voltage. Chinese Physics B, 26(2). doi:10.1088/1674-1056/26/2/028102
  • Pirgholi-Givi, G., Altındal, Ş., Asl., M. S., Namini, A. S., Farazin, J.,  Azizian-Kalandaragh, Y. (2021) The effect of cadmium impurities in the (PVP–TeO2) interlayer in Al/p-Si (MS) Schottky barrier diodes (SBDs): Exploring its electrophysical parameters. Physica B: Condensed Matter, 604, 412617. doi:10.1016/j.physb.2020.412617
  • Reddy, M. S. P., Sreenu, K., Rajagopal Reddy, V., & Park, C. (2017) Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer. Journal of Material Science: Materials in Electronics, 28, 4847-4855. doi:10.1007/s10854-016-6131-8
  • Rhoderick, E. H.,  Williams, R. H. (1988). Metal–Semiconductor Contacts. Oxford. Clarendon Press.
  • Sharma, B. L. (1984). Metal–Semiconductor Schottky Barrier Junctions and Their Applications. New York and London. Plenum Press.
  • Shivachev, B. L., Petrov, T., Yoneda, H., Titorenkova, R.,  Mihailova, B. (2009). Synthesis and nonlinear optical properties of TeO2–Bi2O3–GeO2 glasses. Scripta Materialia, 61(5), 493–496. doi:10.1016/j.scriptamat.2009.05.006
  • Suslick, K. S., Doktycz, S. J. (1990). The Effects of Ultrasound on Solids in Advances in Sonochemistry, 1. Ed. T.J. Mason ed. New York. JAI Press.
  • Sze, S. M. (1981). Physics of Semiconductor Devices. New York. John Wiley & Sons.
  • Tanrıkulu, E. E., Demirezen, S., Altındal, Ş.,  Uslu, İ. (2017). Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature. Journal of Materials Science:Materials in Electronics, 28, 8844–8856. doi:10.1007/s10854-017-6613-3
  • Tataroğlu, A., Altındal, Ş.,  Azizian-Kalandaragh, Y. (2020). C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure. Physica B: Condensed Matter, 582, 411996. doi:10.1016/j.physb.2020.411996
  • Ulusoy, M., Badali, Y., Pirgholi-Givi, G., Azizian-Kalandaragh, Y., Altındal, Ş. (2023). The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface. Synthetic Metals, 292, 117243. doi:10.1016/j.synthmet.2022.117243
Year 2023, , 62 - 69, 28.03.2023
https://doi.org/10.54287/gujsa.1212696

Abstract

Project Number

121C396

References

  • Altındal, Ş., Sevgili, Ö.,  Azizian-Kalandaragh, Y. (2019). The structural and electrical properties of the Au/n-Si (MS) diodes with nanocomposites interlayer (Ag-doped ZnO/PVP) by using the simple ultrasound-assisted method. IEEE Transactions on Electron Devices, 66(7), 3103-3109. doi:10.1109/TED.2019.2913906
  • Altındal Yerişkin, S. (2019). The investigation of effects of (Fe2O4-PVP) organic-layer, surface states, and series resistance on the electrical characteristics and the sources of them. Journal of Material Sciences: Materials in Electronics, 30, 17032-17039. doi:10.1007/s10854-019-02045-x
  • Barkhordari, A., Özçelik, S., Altındal, Ş., Pirgholi-Givi, G., Mashayekhi, H.,  Azizian Kalandaragh., Y. (2021). The effect of PVP: BaTiO3 interlayer on the conduction mechanism and electrical properties at MPS structures. Physica Scripta, 96(8), 085805. doi:10.1088/1402-4896/abeba8
  • Bindra, K., Bookey, H., Kar, A., Wherrett, B., Liu, X.,  Jha, A. (2001). Nonlinear optical properties of chalcogenide glasses: Observation of multiphoton absorption. Applied Physics Letters, 79, 1939–1941. doi:10.1063/1.1402158
  • Card, H. C.,  Rhoderick, E. H. (1971). Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. Journal of Physics D: Applied Physics, 4(10), 1589-1601. doi:10.1088/0022-3727/4/10/319
  • Cheung, S. K.,  Cheung, N. W. (1986). Extraction of Schottky diode parameters from forward current‐voltage characteristics. Applied Physics Letters, 49, 85. doi:10.1063/1.97359
  • Coste, S., Lecomte, A., Thomas, P., Merle-M´ejean, T.,  Champarnaud-Mesjard, J. C. (2007). Sol-gel synthesis of TeO2-based materials using citric acid as hydrolysis modifier. Journal of Sol-Gel Science and Technology, 41, 79–86. doi:10.1007/s10971-006-0117-6
  • Çetinkaya, H. G., Demirezen, S., Altındal Yerişkin, S. (2021). Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes. Physica B: Condensed Matter, 621, 413207. doi:10.1016/j.physb.2021.413207
  • Demirezen, S.,  Altındal Yerişkin, S. (2020). A detailed comparative study on electrical and photovoltaic characteristics of Al/p-Si photodiodes with coumarin-doped PVA interfacial layer: the effect of doping concentration. Polymer Bulletin, 77, 49-71; doi:10.1007/s00289-019-02704-3
  • Demirezen, S., Altındal, Ş., Azizian-Kalandaragh, Y., & Akbaş, A. M. (2022) A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance (Rs) effects. Physica Scripta, 97(5), 055811. doi:10.1088/1402-4896/ac645f
  • Nicollian, E. H.,  Brews, J. R. (1982). MOS (Metal Oxide Semiconductor) Physics and Technology. New York, USA: Wiley.
  • Orak., I., Koçyiğit, A.,  Altındal, Ş. (2017). Electrical and dielectric characterization of Au/ZnO/n-Si device depending frequency and voltage. Chinese Physics B, 26(2). doi:10.1088/1674-1056/26/2/028102
  • Pirgholi-Givi, G., Altındal, Ş., Asl., M. S., Namini, A. S., Farazin, J.,  Azizian-Kalandaragh, Y. (2021) The effect of cadmium impurities in the (PVP–TeO2) interlayer in Al/p-Si (MS) Schottky barrier diodes (SBDs): Exploring its electrophysical parameters. Physica B: Condensed Matter, 604, 412617. doi:10.1016/j.physb.2020.412617
  • Reddy, M. S. P., Sreenu, K., Rajagopal Reddy, V., & Park, C. (2017) Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer. Journal of Material Science: Materials in Electronics, 28, 4847-4855. doi:10.1007/s10854-016-6131-8
  • Rhoderick, E. H.,  Williams, R. H. (1988). Metal–Semiconductor Contacts. Oxford. Clarendon Press.
  • Sharma, B. L. (1984). Metal–Semiconductor Schottky Barrier Junctions and Their Applications. New York and London. Plenum Press.
  • Shivachev, B. L., Petrov, T., Yoneda, H., Titorenkova, R.,  Mihailova, B. (2009). Synthesis and nonlinear optical properties of TeO2–Bi2O3–GeO2 glasses. Scripta Materialia, 61(5), 493–496. doi:10.1016/j.scriptamat.2009.05.006
  • Suslick, K. S., Doktycz, S. J. (1990). The Effects of Ultrasound on Solids in Advances in Sonochemistry, 1. Ed. T.J. Mason ed. New York. JAI Press.
  • Sze, S. M. (1981). Physics of Semiconductor Devices. New York. John Wiley & Sons.
  • Tanrıkulu, E. E., Demirezen, S., Altındal, Ş.,  Uslu, İ. (2017). Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature. Journal of Materials Science:Materials in Electronics, 28, 8844–8856. doi:10.1007/s10854-017-6613-3
  • Tataroğlu, A., Altındal, Ş.,  Azizian-Kalandaragh, Y. (2020). C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure. Physica B: Condensed Matter, 582, 411996. doi:10.1016/j.physb.2020.411996
  • Ulusoy, M., Badali, Y., Pirgholi-Givi, G., Azizian-Kalandaragh, Y., Altındal, Ş. (2023). The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface. Synthetic Metals, 292, 117243. doi:10.1016/j.synthmet.2022.117243
There are 22 citations in total.

Details

Primary Language English
Journal Section Physics
Authors

Çiğdem Ş. Güçlü 0000-0001-6363-4666

Project Number 121C396
Publication Date March 28, 2023
Submission Date November 30, 2022
Published in Issue Year 2023

Cite

APA Güçlü, Ç. Ş. (2023). A Comparison Electronic Specifications of the MS & MPS type Schottky Diodes (SDs) via Utilizing Voltage-Current (V-I) Characteristics. Gazi University Journal of Science Part A: Engineering and Innovation, 10(1), 62-69. https://doi.org/10.54287/gujsa.1212696