Schottky Diyot Uygulamaları için Sn Katkılı ZnO İnce Filmlerin Elektriksel, Optik ve Yapısal Özellikleri

Abstract

Bu araştırma, RF magnetron eş püskürtme kullanılarak cam ve silikon substratlar üzerinde katkısız ve %3 Sn katkılı ZnO ince filmlerin oluşturulmasını içermektedir. Cam substratlar üzerindeki numunelerin yapısal ve optik özellikleri kapsamlı bir şekilde analiz edilmiştir. X-ışını difraksiyonu (XRD) sonuçları, filmlerin açık bir (002) tercihli yönelime sahip altıgen wurtzite yapısına sahip olduğunu göstermiştir. Bant aralığı enerjileri, fotolüminesans spektrumlarından belirlenmiştir. Ayrıca, filmlerin optik geçirgenlik spektrumu, UV-Görünür spektrofotometre kullanılarak belirlenmiştir. Au/ZnO/n-Si ve Au/ZnO:Sn (%3)/n-Si yapılarının elektriksel özellikleri, akım-gerilim ölçümleri ile oda sıcaklığında değerlendirilmiştir. Sonuçlar, Sn birikiminin bariyer yüksekliğini artırdığını ve seri direnci azaltarak diyot performansını iyileştirdiğini göstermiştir. Ayrıca, Au/ZnO:Sn (3%)/n-Si yapısının kapasitans ve iletkenlik özellikleri, C–V ve G/ω–V ölçümleri kullanılarak ±4 V uygulanan önyargı altında 50 kHz ila 1 MHz frekans aralığında analiz edilmiştir. Kapasitans-gerilim, kapasitans-frekans, iletkenlik-gerilim ve iletkenlik-frekans analizlerinden elde edilen bulgular, Sn dopinginin tükenme bölgesini genişlettiğini ve arayüz durumlarıyla ilişkili saçılma etkilerini azalttığını göstermiştir.

Keywords

• Sn katkılı ZnO ince filmler
• Kapasitans-voltaj analizi
• Frekansa bağlı elektriksel özellikler
• RF magnetron eş püskürtme

Structure–Defect–Interface Engineering in 3% Sn-Doped ZnO Thin Films for Enhanced n–Si Schottky Diode Performance

Abstract

This research involved the creation of undoped and 3% Sn-doped ZnO thin films on glass and silicon substrates using RF magnetron co-sputtering. A thorough analysis of the structural and optical properties of the samples on glass substrates was performed. The X-ray diffraction (XRD) results showed that the films had a hexagonal wurtzite structure, with a clear (002) preferred orientation. The band gap energies were determined from photoluminescence spectra. In addition, the optical transmittance spectrum of the films were determined using a UV–Visible spectrophotometer. The electrical characteristics of the Au/ZnO/n-Si and Au/ZnO:Sn (3%)/n-Si structures were evaluated at room temperature through current–voltage measurements. The results demonstrated that Sn deposition increased the barrier height and improved the diode performance by reducing the series resistance. Furthermore, the capacitance and conductance characteristics of the Au/ZnO:Sn (3%)/n-Si structure were analyzed over the frequency range of 50 kHz to 1 MHz under an applied bias of ±4 V using C–V and G/ω–V measurements. The findings from capacitance–voltage, capacitance–frequency, conductance–voltage, and conductance–frequency analyses indicated that Sn doping expanded the depletion region and reduced scattering effects associated with interface states.

Keywords

• Sn-doped ZnO thin films
• Capacitance-voltage analysis
• Frequency-dependent electrical characteristics
• RF magnetron co-sputtering

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