InGaAsP/InP YAPISININ YAPISAL, MORFOLOJİK VE ELEKTRİKSEL KARAKTERİZASYONLARI

Year 2016, Volume: 4 Issue: 3, 159 - 163, 30.09.2016

Barış Kınacı

Abstract

Bu çalışmada, InGaAsP tabakası InP alttaş üzerine Moleküler Demet Epitaksi (MBE) tekniği kullanılarak büyütüldü. InGaAsP/InP yapısının yapısal ve morfolojik özellikleri yüksek çözünürlüklü x‒ray kırınımı (HR‒XRD) ve atomik kuvvet mikroskobu (AFM) ölçümleri ile incelendi. Ayrıca, InGaAsP/InP yapısının deneysel ileri ve ters beslem akım‒voltaj (I‒V) karakteristiği oda sıcaklığında incelendi. İdealite faktörü, bariyer yüksekliği ve seri direnç gibi temel elektriksel parametreler ileri beslem I‒V karakteristiğinden belirlendi.

Keywords

InGaAsP/InP yapısı, MBE tekniği, HR‒XRD, AFM, I‒V karakteristik

References

• Lo Y.H, Bhat R., Hwang D.M, Koza, M.A, Lee T.P, “Bonding by atomic rearrangment of InP/InGaAsP 1.5 m wavelength lasers on GaAs substrate” Appl. Phys. Lett. 58, 1961, 1999.
• Bartness, K.A, Kurtz, S.R, Friedman, D.J, Kibbler, A.E, Kramer C, and Olson, J.M, “29.5%-efficient GaInP/GaAs tandem solar cell”, Appl. Phys. Lett. 65 (8), 989, 1994.
• Wu, J, Walukiewicz, W, Shan, W, Yu, K.M, Ager, J.W, Haller, E.E, Lu, H, Schaff, W.J, “Effects of the narrow band gap on the properties of InN”, Phys. Rev. B, 66, 201403, 2002.
• Yamaguchi, M, Takamoto, T, Araki, K, “Super high-efficiency multi-junction and concentrator solar cells”, Sol. Energy Mater. Sol. Cells, 90 3068-3077, 2006
• . Hiramatsu, K, Nishiyama, K, Motogaito, A, Miyake, H, Iyechika Y, and Maeda, T, “Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth”, Physica Status Solidi (A), 176, 535–543, 1999.
• Frigeri, C, Attolini, G, Bosi, M, Pelosi, C, Germini, F, “Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions”, Superlattice Microst., 45, 451, 2009.
• Arslan, E, Altındal, Ş, Özçelik, S, and Ozbay, E, “Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures”, J. Appl. Phys. 105, 023705, 2009.
• Uslu H, Bengi A, ÇEtin S.Ş, Aydemir U, Altındal Ş, Aghaliyeva S.T, Özçelik S, “Temperature and voltage dependent current–transport mechanism in GaAs/AlGaAs single–quantum–well lasers”, Journal of Alloys Compounds, 507, 190–195, 2010.
• Kınacı, B, Özen, Y, Kızılkaya, K, Asar, T, Çetin, S.Ş, Boyalı, E, Öztürk, M.K, Memmedli, T, Özçelik, S, “Effect of alloy composition on structural, optical and morphological properties and electrical characteristics of GaxIn1-xP/GaAs structure”, J. Mater. Sci: Mater Electron, 24, 1375–1381, 2013.
• Baş, Y, Demirel, P, Akın, N, Başköse, C, Özen, Y, Kınacı, B, Öztürk, M.K, Özçelik, S, Özbay, E, “Microstructural defect properties of InGaN/GaN blue light emitting diode structure”, Journal of Materials Science: Materials in Electronics, 25, 3924-3932, 2014.
• Özen, Y, Akın, N, Kınacı, B, Özçelik, S, “Performance evaluation of a GaInP/GaAs solar cell structure with the integration of AlGaAs tunnel junction”, Sol. Energy Mater. Sol. Cells, 137, 1-5, 2015.
• Lisesivdin, S.B, Demirezen, S, Caliskan, M.D, Yildiz, A, Kasap, M, Ozcelik, S, and Ozbay, E, “Growth parameter investigation of Al0. 25Ga0. 75N/GaN/AlN heterostructures with Hall effect measurements”, Semicond. Sci. Tech., 23, 095008, 2008.
• Takagi, S, “Dynamical theory of diffraction applicable to crystals with any kind of small distortion”, Acta Crystallogr., 15, 1311-1312, 1962.
• Taupin, D, “Dynamic theory of x-ray diffraction in crystals”, Bull. Soc. Fr. Mineral. Crystallogr., 87: 469-511 (1964).
• LEPTOS User Manual (www.bruker-axs.de), Version 2, 2004.