Aynı Şartlarda Hazırlanmış Al/Bi3Ti4O12/n-Si (MFS) diyotların (60 Adet) Engel Yükseklikleri İle İdealite Faktörlerindeki Dağılım

Year 2017, Volume: 5 Issue: 3, 89 - 96, 15.09.2017

Hayriye Gökçen Çetinkaya

Abstract

Bu çalışmada, aynı şartlarda hazırlanmış 60 adet Al/Bi3Ti4O12/n-Si (MFS) diyot için engel

yükseklikleri (bo) ile idealite faktörleri (n) arasındaki bağıntı, doğru ön-gerilim akım-voltaj (IV)

karakteristikleri kullanılarak oda sıcaklığımda incelendi. Deneysel sonuçlar, aynı koşullarda

ve aynı n tipi Si wafer üzerinde hazırlanmalarına rağmen, bu diyotların bo ve n değerleri oldukça

farklılık göstermiştir. Yüksek n değerleri, BTO arayüzey tabakanın kalınlığına ve engel

homojensizliğine atfedildi. Bu istenmeyen durumun fiziksel kaynağını açıklamak, ilerde

üretilecek numunelerin kalitesi ve tekrarlanabilirliği açışından oldukça önem arz etmektedir. bo

ve n değerlerindeki değişimin oldukça Gaussyen dağılıma uyduğu görüldü ve bu değerler

arasında, bo=(-0.065n+1.005) eV şeklinde lineer bir bağlantı elde edildi.

Keywords

Al/ Bi3Ti4O12/n-Si (MFS) yapılar, Engel yüksekliği ve idealite faktörleri, Gaussyen dağılım, Engel ve arayüzey tabaka homojensizliği

The barrier height (BH) and ideality factor (n) distribution in identically prepared Al/ Bi3Ti4O12/n-Si (MFS) structures

Abstract

In this study, the values of barrier heights and ideality factors of identically fabricated Au/BTO/n-

Si (MFS) type SBDs (60 dots) have been obtained from their intercepts and slopes linear parts of

forward bias lnI vs V plots at room temperature. Experimental results show that these two

important parameters (BH and n) of the diodes change from diode to diode even if they are

identically prepared on same quarter n-Si wafer. These results are clearly important to understand

the physical origin of such non-ideal behavior so that it can be controlled in future such device

applications. High values of n can be attributed to the existence of a wide distribution of low

Schottky barrier height (SBH) patches, interfacial BTO layer and surface states. According to us,

the BH differences over the contact area are a result of inhomogeneity interfacial layer thickness

or composition and BH between metal, grain boundaries and semiconductor and non-uniformity

of the interfacial charges or dislocations.

Keywords

Bi3Ti4O12 (BTO) structures, Correlation between BH and n, Analysis of lateral distribution BH 1.

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