Atomik Katman Biriktirme Tekniğine Genel Bakış: Zno, Tio2 Ve Al2o3 Filmlerin Üretimi

Year 2019, Volume: 7 Issue: 3, 649 - 660, 27.09.2019

Hakan Ateş , Meryem Polat Gönüllü

https://doi.org/10.29109/gujsc.593292

Cited By: 4

Abstract

Gelişmekte
olan teknoloji ile birlikte optoelektronik, enerji çevrimi, nanomedikal
uygulamaları ve katalizör malzemeler gibi pek çok alanda teknolojinin minyatürleşmesi
sebebiyle nano-boyutta malzeme üretiminin gerekliliği önem kazanmıştır. Bu
sebeple son zamanlarda yapılan bilimsel çalışmalar atomik-boyutta ince film
kaplama ve büyütme teknolojilerine odaklanmışlardır. Tam da bu noktada,
atomik-boyutta üstün kaliteli kaplamalar yapmaya imkân sağlayan atomik katman
biriktirme (ALD) ince film üretim tekniği devreye girmektedir. Bu çalışmada,
ALD tekniği hakkında temel bilgi verilmiş, ALD kullanılarak 200 ºC taban sıcaklığında
silisyum yongalar üzerine ZnO, TiO₂ ve Al₂O₃ ince
filmler kaplanmıştır. Homojen yüzeyli ince film kaplamaların yapılabilmesi için
öncelikle deneysel parametreler değiştirilerek farklı tekrarlarda üretimler
gerçekleştirilmiştir ve en uygun deney koşulları belirlenmiştir. Detaylı karakterizasyon
işlemleri en uygun üretim koşulları altında kaplama homojenliği sağlayabilmiş ZnO,
TiO₂ ve Al₂O₃ ince filmler için yapılmıştır.
Üretilen filmlerin homojen bir yapıya sahip olup olmadığını belirlemek için spektroskopik
elipsometri tekniği kullanılarak çeşitli noktalarından kalınlıkları
saptanmıştır. Ayrıca kristal yapıları hakkında bilgi edinmek adına X-ışını
kırınım desenleri incelenmiştir. 

Keywords

ALD, ince filmler, kaplama, nano teknoloji

Thanks

Bu çalışma, 07/2015-08 ve 07/2016-11 numaralı Gazi Üniversitesi Bilimsel Araştırma Projeleri desteğine ve Okyay Technology R&D tarafından desteklendi.

References

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