Ardışık Düşük Doz -Işınlarının c-Si Güneş Hücresi Üzerine Etkisinin İncelenmesi

Year 2023, Volume: 11 Issue: 3, 582 - 591, 27.09.2023

İsmail Kabaçelik

https://doi.org/10.29109/gujsc.1199922

Abstract

Çalışmada, ardışık düşük doz gama () ışınlarının mono-kristal Silisyum (c-Si) güneş hücresi üzerine etkisi incelendi. ışını kaynağı olarak 60Co kullanılmıştır. c-Si güneş hücresinin performansı, radyasyon öncesi ve sonrası karanlık ve AM1.5G ışık koşullarında alınan akım-voltaj (I-V), dışsal kuantum verimlilik (EQE), kapasitans-voltaj (C-V) ve iletkenlik-voltaj (G/-V) ölçümleri ile belirlenmiştir. Deneysel sonuçlar, radyasyona maruz kaldıktan sonra hücrelerin idealite faktörlerinin arttığını göstermektedir. Doz miktarı arttıkça kısa devre akımı (Isc) ve verim () değerleri azalırken, açık devre voltajı (Voc) ve doluluk faktörü (FF) değerleri ise yaklaşık sabit kalmaktadır. Dışsal kuantum verimlilik (EQE) ölçümleri, güneş hücresinde oluşan hasarın taban katmanında oluştuğu gösterirken, hücrede oluşan bu hasarın azınlık yük taşıyıcısı yarı ömründe oluşan azalma ile ilişkilendirilmektedir. Ayrıca, aygıt performansındaki değişim C-V ve G/-V ölçümleri ile de doğrulanmıştır. Deneysel sonuçlar, radyasyon öncesi ve sonrası karşılaştırılarak tartışılmıştır.

Keywords

60Co, Gama ışıması, güneş hücresi, elektriksel karakterizasyon

Thanks

Yazar, güneş hücresi karakterizasyonları için Orta Doğu Teknik Üniversitesi Güneş Enerjisi Araştırma ve Uygulamaları Merkezi'ne (GÜNAM) ve ışınlama tesisi için Akdeniz Üniversitesi Nükleer Araştırma ve Uygulama Merkezi'ne (NUBA) teşekkür eder.

Investigation of the Effect of Successive Low-Dose Gamma-Rays on c-Si Solar Cell

Abstract

In the study, the effect of sequential low-dose gamma () rays on mono-crystalline Silicon (c-Si) solar cells was investigated. 60Co was used as the ray source. Performance of c-Si solar cells was determined via dark and AM1.5G light current-voltage (I-V), external quantum efficiency (EQE), capacitance-voltage (C-V) and conductivity-voltage (G/-V) measurements before and after irradiation. Experimental results show that ideality factors of cells increase after exposure to radiation. As the dose increased, the short-circuit current (Isc) and efficiency () values decreased, while the open-circuit voltage (Voc) and fill factor (FF) values remained approximately constant. External quantum efficiency (EQE) measurements show that damage has occurred in base layer of the solar cell, while this damage is associated with a reduction in minority carrier lifetime. In addition, the change in device performance was confirmed by C-V and G/-V measurements. Experimental results are discussed by comparing before and after radiation.

Keywords

60Co, gamma irradiation, solar cell, electrical characterization

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