Investigation of the X-ray fluorescence parameters and valance electronic structure for Ni in Ni-B/hBN coating materials with doped TMAB and saccharine

Year 2022, , 89 - 97, 30.09.2022

Oğuz Kağan Köksal , İsmail Hakkı Karahan

https://doi.org/10.17714/gumusfenbil.1030049

Abstract

In this investigation, K shell valance electronic structure of Ni in Ni-B alloy coatings were studied by means of collecting the X-ray emission and XRD spectra. The data obtained were evaluated in terms of the K beta/K alpha X-ray intensity ratios and XRD data. The coated alloys were fabricated with using different concentrations of hexagonal boron nitride (hBN) for this study by electrochemical storage method. Besides saccharine and trimethylamine borane complex (TMAB) were added the current samples at constant concentration. The current specimens were excited by 59.5 keV photons from a 241Am annular radioactive source. K shell X-rays emitted by the specimens were detected by means of an Ultra-LEGe detector with a resolution of 150 eV at 5.9 keV. The K shell X-ray intensity ratios of Ni-B alloys are checked with pure Ni. Variations in the current outcomes were interpreted by the variation in valence electronic structures of Ni in Ni-B/hBN coating materials with doped TMAB and saccharine.

Keywords

Intensity ratio, K shell, XRD, XRF, Valance electronic structure

Ni-B/hBN katkılı TMAB ve sakarinli kaplama malzemelerinde Ni için X-ışını floresans parametrelerinin ve valans elektronik yapısının incelenmesi

Abstract

Bu araştırmada, Ni-B alaşımlı kaplamalarda Ni'nin K kabuğu değerlik elektronik yapısı, X-ışını emisyonu ve XRD spektrumları toplanarak incelenmiştir. Elde edilen veriler K beta/K alfa X-ışını yoğunluk oranları ve XRD verileri açısından değerlendirildi. Kaplanmış alaşımlar, bu çalışma için farklı konsantrasyonlarda altıgen bor nitrür (hBN) kullanılarak elektrokimyasal depolama yöntemiyle üretilmiştir. Mevcut örneklere sabit konsantrasyonda sakarin ve trimetilamin boran kompleksi (TMAB) ilave edildi. Mevcut örnekler, 241 Am halka şeklindeki radyoaktif kaynaktan gelen 59.5 keV fotonları tarafından uyarıldı. Örneklerden yayılan K kabuk X-ışınları, 5,9 keV'de 150 eV çözünürlüğe sahip bir Ultra-LEGe dedektörü vasıtasıyla tespit edildi. Ni-B alaşımlarının K kabuğu X-ışını yoğunluk oranları saf Ni ile kontrol edildi. Mevcut sonuçlardaki değişimler, katkılı TMAB ve sakarin içeren Ni-B/hBN kaplama malzemelerinde Ni'nin değerlik elektronik yapılarındaki değişim ile yorumlanmıştır.

Keywords

Şiddet oranı, K kabuğu, XRD, XRF, Değerlik elektron yapısı

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