InSe ve InSe:Sn Yarıiletkenlerinde Farklı Tavlama Sıcaklıkları ve Süreleri için Lineer Soğurma Katsayılarının Belirlenmesi

Year 2018, , 365 - 371, 31.07.2018

Burcu Akça , Salih Zeki Erzeneoğlu

https://doi.org/10.17714/gumusfenbil.414110

Abstract

Bu çalışmada
Bridgman/Stockbarger metodu ile büyütülmüş InSe ve InSe:Sn yarıiletken
kristallerinin farklı tavlama sıcaklıkları ve zamanları için lineer soğurma
katsayıları incelenmiştir. Yarıiletkenlerden geçirilen ²⁴¹Am’in
gamma ışınları yüksek çözünürlüklü Si(Li) detektör tarafında detekte edilmiştir
ve Enerji ayırımlı X-ışını Floresan Spektrometresi (EDXRFS) kullanılmıştır.
InSe ve InSe:Sn yarıiletken kristallerinin lineer soğurma katsayılarının,
tavlama süresi ve sıcaklığının artışıyla genelde arttığı gözlenmiştir.

Keywords

Bridgman/Stockbarger, EDXRFS, Lineer soğurma katsayısı, InSe

Determination of Linear Attenuation Coefficients for Different Annealing Temperatures and Duration in InSe and InSe:Sn Semiconductors

Abstract

In this study have
examined linear attenuation coefficients of InSe and InSe:Sn semiconductor
crystals have been grown by using Bridgman/Stockbarger for different annealing temperature and time. Gamma
rays of ²⁴¹Am passed through semiconductors have been detected by a
high-resolution Si(Li) detector and by using energy dispersive X-ray
fluorescence spectrometer (EDXRFS). It has been observed that
the linear absorption coefficients of InSe and InSe: Sn semiconductor crystals
generally increase with the increase of annealing time and temperature.

Keywords

Bridgman/Stockbarger, EDXRFS, Linear attenuation Coefficient, InSe

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