Thermodynamic calculations were performed to determine the optimal conditions for the growth of germanium epitaxial layers from a Ge-Sn solution (system) to a germanium substrate. The determination of the optimal conditions was based on the change in the Gibbs energy values of the system during the crystallization process and the size of the crystal-forming nanoclusters. Based on the results obtained, we determined the optimal conditions for obtaining low-dislocation, crystalline perfect germanium epitaxial layers from a liquid tin solution, and recommended starting the crystallization process at 923 K and finishing at 800 K. When the temperature drops below 800 K, the formation of Ge1-xSnx epitaxial layers from the Ge-Sn solution was observed.
Primary Language | English |
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Subjects | Metrology, Applied and Industrial Physics, Thermodynamics and Statistical Physics, Physical Chemistry |
Journal Section | Research Articles |
Authors | |
Publication Date | September 1, 2022 |
Published in Issue | Year 2022 Volume: 25 Issue: 3 |