Character of the interaction in the As2Te3-TISe System and Electrophysical Propertes of the Phases Obtained

Year 2022, Volume: 8 Issue: 2, 302 - 311, 31.12.2022

İmir Aliev Ceyran Ahmedova

https://doi.org/10.29132/ijpas.1020404

Abstract

The character of the interaction in the As2Te3-TlSe system was studied by the methods of Differential Thermal Analysis (DTA), X-ray Diffraction (XRD), Microstructure analysis (MCA), and also by measuring the microhardness and determining the density of alloys, and state diagram was constructed. It is established that the As2Te3-TlSe state diagram is a quasibinary section of the triple mutual system As, Tl // Se, Te. Two new compounds, TlAs2Te3Se and Tl3As2Se3Te3, are formed in the As2Te3-TlSe system. Both compounds are obtained in the vitreous state. Solid solutions based on As2Te3 at room temperature reach up to 3 mol.% TlSe, and based on TlSe-2 mol.% As2Te3. The electrical conductivity and thermoelectric power coefficient of the (As2Te3)1-x (TlSe)x solid solutions have been measured as functions of temperature.

Keywords

Alloys, compound, congruently, thermoelectric

Supporting Institution

The work has been carried out within the framework of the international joint research laboratory “Advanced Materials for Spintronics and Quantum Computing” (AMSQC) established between Institute of Catalysis and Inorganic Chemistry of ANAS (Azerbaijan) and Donostia International Physics Center (Basque Country, Spain).

Thanks

The work has been carried out within the framework of the international joint research laboratory “Advanced Materials for Spintronics and Quantum Computing” (AMSQC) established between Institute of Catalysis and Inorganic Chemistry of ANAS (Azerbaijan) and Donostia International Physics Center (Basque Country, Spain).

As2Te3-TlSe Sistemindeki Etkileşimin Karakteri ve Elde Edilen Fazların Elektrofiziksel Özellikleri

Abstract

As2Te3-TlSe sistemindeki etkileşimin karakteri, Diferansiyel Termal Analiz (DTA), X-ışını Kırınım (XRD), Mikroyapı analizi (MCA) yöntemleri ile ve ayrıca mikrosertlik ölçülerek ve alaşımların yoğunluğu belirlenerek incelenmiştir ve durum diyagramı oluşturulmuştur.
As2Te3-TlSe faz diyagramı As, Tl // Se, Te üçlü karşılıklı systemin kuvazi binar kesiti olduğu tespit edilmiştir. As2Te3-TlSe sisteminde iki yeni bileşik, TlAs2Te3Se ve Tl3As2Se3Te3 oluşturulmuştur. Her iki bileşik de camsı halde elde edilir. Oda sıcaklığında As2Te3 bileşiğine dayalı katı çözelti alanı 3 mol. % TlSe ve TlSe bileşiğine dayalı katı çözelti alanı ise 2 mol. % As2Te3 olarak belirlenmiştir.
(As2Te3)1-x (TlSe)x katı çözeltilerinin elektrik iletkenliği ve termoelektrik gücü, sıcaklığın fonksiyonu olarak ölçülmüştür.

Keywords

Alaşımlar, bileşik, kongruent, termoelektrik

References

• Aliev, I.I. (1992). Physicochemical basis for obtaining new materials in arsenic chalcogenide systems with cadmium, indium and thallium chalcogenides. Dis. for a doctor of chemical sciences. Baku, 380 p.
• Aliev, I.I., Aliev, O.M., Rustamov, G.P. and Ilyasov, T.M. (1988). Russ. J. Inorg, Chem, 33, 2376-2378.
• Aliev, I.I., Babanly, M.B. and Farzaliev, A.A. (2007 May). Optical and photoelectric properties of thin glass films (As2Se3)1-x(TlSe)X (X = 0.05-0.01). XI International Conference on the Physics and Technology of Thin Films: Ivano-Frankivsk, 86.
• Farzaliev, A.A., Aliev, I.I., Aliev, O.M. and Aliev, I.G. (2006). J. Chem. Prob., 2, 284-287.
• Gorbachev, V.V. and Okhotin, A.S. (1972). Thermophysical properties of semiconductors. Moscow, Atomizdat, 200 p.
• Kandpal, Seema and Kushwaha, R. P. S. (2007). Indian Academy of Sciences, PRAM ANA J. of Phys, 69, 481.
• Khvostorenk, A.S. (1972). Chalcogenides of arsenic. Review from the series, Physical and Physical Properties of a Solid Body. Moscow, 93 p.
• Kolomiets, N.B. (1962). Plant. Lab., 28 (2), 238–240.
• Littler, С., Fu, M., Mägi, L. B., Pudo, D. and Eggleton, B. J. (2006). Optics Express, 14, 8088.
• Lyakishev, N.P. (2001). Diagrams of the state of double metallic systems. Mechanical Engineering, 3, 872 p.
• Okhotin, A.S., Pushkarskii, N.S., Borovikova, R.P. and Smirnov, R.A. (1969). Methods for studying the thermoelectrical properties of semiconductors. M.: Atomizdat, 175 p.
• Rustamov, P.G., Aliev, I.I., Ilyasov, T.M. and Abilov, Ch.I. (1984). Photoelectric properties of As2Se3-Tl2Te glass systems. Proceedings of the conference "Amorphous semiconductors", BAS. Sofia, 162.
• Veliev, C.A., Aliev, I.I. and Mamedova, A.Z. (2007). Russ. J. of Inor. Chem. 52, 312-315.