Ptcdi-C8/P-Si Heterojunction Diyot: Yapısı ve Elektriksel Karakterizasyonu

Yıl 2024, Cilt: 10 Sayı: 2, 604 - 622, 31.12.2024

Murat Erdal Cihat Özaydın

https://doi.org/10.29132/ijpas.1569593

Öz

Bu çalışmada, p-Si üzerine spin kaplama yöntemi kullanılarak PTCDI-C8 ince filmi büyütülerek Al/PTCDI-C8/p-Si organik-inorganik (OI) heteroeklem diyotu (C1) üretildi. Benzer şekilde, geleneksel Al/p-Si metal-yarı iletken (MS) diyotu (C0) ara katman kullanılmadan üretildi. C0 ve C1 diyotların I-V ve C-V ölçümleri karanlıkta ve oda sıcaklığında alındı. Her iki diyot da iyi doğrultucu özellikler gösterdi. I-V karakteristiklerinden, C1 diyotunun idealite faktörü, bariyer yüksekliği ve seri direnci sırasıyla 2,1, 0,74 eV ve 248 kΩ olarak belirlendi. C1 heterojunsiyonu için elde edilen BH değerinin, geleneksel C0 diyot için elde edilen değerden daha yüksek olduğu gözlendi. Hem C1 hem de C0 diyotların elektriksel parametreleri, özellikle seri direnç, Cheungs ve Norde yöntemleri kullanılarak yeniden hesaplandı. Oda sıcaklığında, diyotların C-V ölçümleri farklı frekanslarda gerçekleştirildi. C-V karakteristiklerinden, her iki diyotun difüzyon potansiyeli (Vd), bariyer yüksekliği (Φb(C-V)) ve serbest taşıyıcı yoğunluğu (NA) hesaplandı. Ayrıca, C1’in fotovoltaik parametreleri aydınlatma koşulları altında ölçüldü. C1 heteroeklemi, elde edilen fotovoltaik parametreler Voc ve Isc ile bir fotodiyot davranışı göstermektedir.

Anahtar Kelimeler

Heteroeklem diyot, PTCDI-C8, ince film, elektriksel karakterizasyon

The Ptcdi-C8/P-Si Heterojunction Diode: Its Construction and Electrical Characterization

Öz

In this study, an Al/PTCDI-C8/p-Si organic-inorganic (OI) heterojunction diode (C1) was fabricated by depositing a PTCDI-C8 thin film onto p-Si using the spin coating method. Likewise, a conventional Al/p-Si metal-semiconductor (MS) diode (C0) was fabricated without the use of an interlayer. I-V and C-V measurements of the C0 and C1 diodes were taken in the dark and at room temperature. The rectifying properties of both diodes were good. From the I–V characteristics, the ideality factor, barrier height, and series resistance of the C1 diode were determined to be 2.1, 0.74 eV, and 248 kΩ, respectively. The BH value obtained for the C1 heterojunction is higher than the value obtained for the conventional C0 diode. The electrical parameters of both the C1 and C0 diodes, particularly the series resistance, were recalculated using Cheungs and Norde methods. At room temperature, the C-V measurements of the diodes were carried out at various frequencies. From the evaluation of the C-V characteristics, the diffusion potential (Vd), barrier height (Φb(C-V)), and free carrier density (NA) of both diodes were calculated. Additionally, the device's photovoltaic parameters were measured under illumination conditions. The C1 heterojunction shows a photodiode behavior with the obtained photovoltaic parameters Voc and Isc.

Anahtar Kelimeler

Heterojunction diode, PTCDI-C8, thin films, electrical characterization

Kaynakça

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