Ag/Aniline blue/n-Si Type Schottky Diode with Organic Dye Interlayers Investigation of Electrical and Photovoltaic Properties
Yıl 2020,
Cilt: 1 Sayı: 1, 55 - 62, 22.08.2020
Bahdisen Gezer
,
Can Gezer
Öz
In this study; Polished part n-Si semiconductor together with a donor concentration of 3x1017 /cm, 200 μm thick, was used. After proper chemical cleaning, an Al ohmic contact was made to the lower face of the semiconductor crystal. After the aniline blue dye was coated with methanol and acetone solution on the upper side, the lower surface of the organic layer was contacted. The electrical and interfacial properties of the manufactured Ag/Aniline blue/n-Si/Al Schottky diode, current-voltage (IV) measurement at room temperature under dark and light, and capacitance (CV) and conductance in the frequency range of 100-900 kHz in 100 kHz steps -Voltage (GV) properties were investigated. Some parameters such as barrier height (ɸB) and series resistance (Rs) were obtained from the modified Norde function and Cheung functions using straight feed I-V data. The interface state density (Nss) of the diode was also calculated. In addition, Data obtained as a result of I-V measurements, diode has a good straightening feature.
Kaynakça
- Altindal, S., Tunc, T., Tecimer, H. and Yucedag I. (2014). Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures in dark and under 250 W illumination level. Materials Science in Semiconductor Processing, 28, 48-53.
- Aydoğan, Ş., Sağlam, M. and Türüt, A. (2005). On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature. Appl. Surf. Sci., 250(1), 43-49.
- Balkanski, M., and Wallis, R. F. (2000). Semiconductor Physic and Applications , Oxford Unv. Press, New York.
- Bohlin, K. E. (1986). Generalized Norde plot including determination of the ideality factor. Journal of Applied Physics, 60(3), 1223.
- Çaldıran, Z., Deniz, A. R., Aydogan, Ş., Yesildag, A. and Ekinci, D. (2013). The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n-Si. Superlattices and Microstructures, 56, 45–54.
- Çetinkaya, H.G., Tecimer, H., Uslu, H. and Altindal, S. (2013). Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures. Curr. Appl. Phys., 13, 1150-1156.
- Gezer, B. (2018). Studies on an Ultrasonic Synthesis, Characterization, and Thermodynamic Analysis of New Metal Nanocatalysts Applied Directly to Alcohol Fuel Cells. Arabian Journal for Science and Engineering, 43, 6203–6209
- Gökcen, M. (2015). Illumination Effects on Electrical Characteristics of Au/Bi4Ti3O12/n-Si Structures. Journal of Nanoelectronics and Optoelectronics, 10(3), 309-313.
- Gökcen, M. and Alli, A. (2014). Investigation of electrical and photovoltaic properties of Au/poly(propylene glycol)-b-polystyrene/n-Si diode at various illumination intensities. Philosophical Magazine, 94(9), 925-932.
- Güllü, O. and Turut, A. (2008). Photovoltaic and electronic properties of quercetin/p-InP solar cells. Sol. Ener. Mater. Sol. Cell, 92(10), 1205–1210.
- Güllü, Ö., Asubay, S., Aydoğan, Ş., and Türüt, A. (2010). Electrical characterization of the Al/new fuchsin/n-Si organic-modified device, Physica E, 42, 1411-1416.
- Güllü, Ö., Cankaya, M., and Reddy, V. R. (2019). Barrier enhancement of Al/n-InP schottky diodes by grafene oxide thin layer. İndian Journal of Physics, 93(4), 467-474.
- Kern, W. (2008). Overview and evolution of silicon wafer cleaning technology Handbook of Silicon Wafer . Cleaning Technology, 2.
- Kılıcoglu, T., Aydın, M. E. and Ocak Y. S. (2007). The determination of the interface state density distribution of the Al/methyl red/p-Si Schottky barrier diode by using a capacitance method. Phy. B. Cond. Matter, 388 (1), 244–248.
- McLeon, A.B. (1986). Limitations to the Norde I-V plot. Semicond. Science Tech., 1,177-179.
- Norde, H. (1979). A modified forward I-V plot for Schottky diodes with high series resistance. Journal of Applied Physics, 50, 5052.
- Ocak, Y.S., Ebeoglu, M. A., Topal, G. and Kılıcoglu T. (2010). Temperature dependent electrical characteristics of an organic–inorganic heterojunction obtained from a novel organometal Mn complex. Physica B, 405, 2329-2333.
- Orak, İ., Toprak, M. and Turut, A. (2014). Illumination impact on the electrical characterizations of an Al/Azure A/p-Si heterojunction. Physica Scripta, 89, 1158-1165.
- Orak, I., Turut, A. and Toprak, M. (2015). The comparison of electrical characterizations and photovoltaic performance of Al/p-Si and Al/azure C/p-Si junctions devices. Synthetic Metals, 200, 66-73.
- Orak, I., Kocyigit, A. and Turut, A. (2017). The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique. Journal of Alloys and Compounds, 691, 873-879.
- Oyama, N., Takanashi, Y., Kaneko, S., Momiyama K., Suzuki, K. and Hirose, F. (2011). Pentacene/n—Si heterojunction diodes and photovoltaic devices investigated by I–V and C–V measurements. Micro. Eng., 88 (9), 2959–2963.
- Özaydin, C., Akkilic, K., Ilhan, S., Ruzgar, S., Gullu, O. and Temel, H. (2013). Characterization of an Au/n-Si photovoltaic structure with an organic thin film. Materials Science in Semiconductor Processing, 16(4), 1125-1130.
- Reddy, R., Reddy, V., Padmasuvarna, R., and Narasappa, T. (2015). Ru/Ti schottky contacts on n-type In-P (100): Temperature Dependence of Current-Voltage (I-V) characteristics. Procedia Materials Science, 10, 666 – 672.
- Rhoderick, E.H. and William, R.H. (1988). Metal-Semiconductor Contacts. 2nd ed. Clarendon, Oxford.
- Sze, S.M. (1981). Physics of semiconductor devices. 2nd ed. New York Wiley.
- Tatar, B., Demiroglu, D. and Urgen, M. (2013). Structure and photovoltaic properties of Ag/p-CuPc/a-Si/c-Si/Ag organic-inorganic hybrid heterojunction fabricated by chemical spray pyrolysis technique.
Microelectronic Engineering, 108, 150-157.
- Tunc, T., and Gokcen, M. (2012). Prepartion and Electrical Characteristion Of Au/n-Si (110) Sucructure With PVA-Nickel Acetate Composite Film Interfacial Layer. Journal Of Composite Materials, 46, 2843-2850.
- Yakuphanoglu, F. (2010). Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye. Journal Alloys Comp., 494(2), 451–455.
- Yakuphanoglu, F., Ocak, Y. S., Kılıcoglu, T. and Farooq, W. A. (2011). Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye. Micro. Eng., 88, 2951–2944.
- Zafer, C. (2006). Organik Boya Esaslı Nanokristal Yapılı İnce Film Güneş Pili Üretimi. Ege Üniversitesi Fen Bilimleri Enstitüsü, Doktora Tezi.
Organik Boya Ara Katmanlı Ag/Anilin mavisi/n-Si Tipi Schottky Diyot Elektrik ve Fotovoltaik Özelliklerin Araştırılması
Yıl 2020,
Cilt: 1 Sayı: 1, 55 - 62, 22.08.2020
Bahdisen Gezer
,
Can Gezer
Öz
Bu çalışmada, parlatılmış kısım n-Si yarı iletken, 3x1017 /cm donör konsantrasyonu ile birlikte, 200 μm kalınlık kullanılmıştır. Uygun kimyasal temizlemeden sonra, yarı iletken kristalin alt yüzüne bir Al ohm teması yapıldı. Anilin mavisi boyası, üst tarafta metanol ve aseton çözeltisi ile kaplandıktan sonra, organik katmanın alt yüzeyi temas ettirildi. Üretilen Ag/Anilin mavisi/n-Si/Al Schottky diyotunun elektriksel ve arayüzey özellikleri, karanlık ve aydınlıkta oda sıcaklığında akım-voltaj (IV) ölçümü ve 100- frekans aralığında kapasitans (CV) ve iletkenlik 100 kHz'lik adımlarla 900 kHz -Gerilim (GV) özellikleri incelenmiştir. Bariyer yüksekliği (ɸB) ve seri direnç (Rs) gibi bazı parametreler, düz besleme I-V verileri kullanılarak değiştirilmiş Norde fonksiyonu ve Cheung fonksiyonlarından elde edildi. Diyotun arayüz durum yoğunluğu (Nss) da hesaplandı. Ayrıca I-V ölçümleri sonucunda elde edilen veriler, diyotun iyi bir doğrultma özelliğine sahiptir.
Kaynakça
- Altindal, S., Tunc, T., Tecimer, H. and Yucedag I. (2014). Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures in dark and under 250 W illumination level. Materials Science in Semiconductor Processing, 28, 48-53.
- Aydoğan, Ş., Sağlam, M. and Türüt, A. (2005). On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature. Appl. Surf. Sci., 250(1), 43-49.
- Balkanski, M., and Wallis, R. F. (2000). Semiconductor Physic and Applications , Oxford Unv. Press, New York.
- Bohlin, K. E. (1986). Generalized Norde plot including determination of the ideality factor. Journal of Applied Physics, 60(3), 1223.
- Çaldıran, Z., Deniz, A. R., Aydogan, Ş., Yesildag, A. and Ekinci, D. (2013). The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n-Si. Superlattices and Microstructures, 56, 45–54.
- Çetinkaya, H.G., Tecimer, H., Uslu, H. and Altindal, S. (2013). Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures. Curr. Appl. Phys., 13, 1150-1156.
- Gezer, B. (2018). Studies on an Ultrasonic Synthesis, Characterization, and Thermodynamic Analysis of New Metal Nanocatalysts Applied Directly to Alcohol Fuel Cells. Arabian Journal for Science and Engineering, 43, 6203–6209
- Gökcen, M. (2015). Illumination Effects on Electrical Characteristics of Au/Bi4Ti3O12/n-Si Structures. Journal of Nanoelectronics and Optoelectronics, 10(3), 309-313.
- Gökcen, M. and Alli, A. (2014). Investigation of electrical and photovoltaic properties of Au/poly(propylene glycol)-b-polystyrene/n-Si diode at various illumination intensities. Philosophical Magazine, 94(9), 925-932.
- Güllü, O. and Turut, A. (2008). Photovoltaic and electronic properties of quercetin/p-InP solar cells. Sol. Ener. Mater. Sol. Cell, 92(10), 1205–1210.
- Güllü, Ö., Asubay, S., Aydoğan, Ş., and Türüt, A. (2010). Electrical characterization of the Al/new fuchsin/n-Si organic-modified device, Physica E, 42, 1411-1416.
- Güllü, Ö., Cankaya, M., and Reddy, V. R. (2019). Barrier enhancement of Al/n-InP schottky diodes by grafene oxide thin layer. İndian Journal of Physics, 93(4), 467-474.
- Kern, W. (2008). Overview and evolution of silicon wafer cleaning technology Handbook of Silicon Wafer . Cleaning Technology, 2.
- Kılıcoglu, T., Aydın, M. E. and Ocak Y. S. (2007). The determination of the interface state density distribution of the Al/methyl red/p-Si Schottky barrier diode by using a capacitance method. Phy. B. Cond. Matter, 388 (1), 244–248.
- McLeon, A.B. (1986). Limitations to the Norde I-V plot. Semicond. Science Tech., 1,177-179.
- Norde, H. (1979). A modified forward I-V plot for Schottky diodes with high series resistance. Journal of Applied Physics, 50, 5052.
- Ocak, Y.S., Ebeoglu, M. A., Topal, G. and Kılıcoglu T. (2010). Temperature dependent electrical characteristics of an organic–inorganic heterojunction obtained from a novel organometal Mn complex. Physica B, 405, 2329-2333.
- Orak, İ., Toprak, M. and Turut, A. (2014). Illumination impact on the electrical characterizations of an Al/Azure A/p-Si heterojunction. Physica Scripta, 89, 1158-1165.
- Orak, I., Turut, A. and Toprak, M. (2015). The comparison of electrical characterizations and photovoltaic performance of Al/p-Si and Al/azure C/p-Si junctions devices. Synthetic Metals, 200, 66-73.
- Orak, I., Kocyigit, A. and Turut, A. (2017). The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique. Journal of Alloys and Compounds, 691, 873-879.
- Oyama, N., Takanashi, Y., Kaneko, S., Momiyama K., Suzuki, K. and Hirose, F. (2011). Pentacene/n—Si heterojunction diodes and photovoltaic devices investigated by I–V and C–V measurements. Micro. Eng., 88 (9), 2959–2963.
- Özaydin, C., Akkilic, K., Ilhan, S., Ruzgar, S., Gullu, O. and Temel, H. (2013). Characterization of an Au/n-Si photovoltaic structure with an organic thin film. Materials Science in Semiconductor Processing, 16(4), 1125-1130.
- Reddy, R., Reddy, V., Padmasuvarna, R., and Narasappa, T. (2015). Ru/Ti schottky contacts on n-type In-P (100): Temperature Dependence of Current-Voltage (I-V) characteristics. Procedia Materials Science, 10, 666 – 672.
- Rhoderick, E.H. and William, R.H. (1988). Metal-Semiconductor Contacts. 2nd ed. Clarendon, Oxford.
- Sze, S.M. (1981). Physics of semiconductor devices. 2nd ed. New York Wiley.
- Tatar, B., Demiroglu, D. and Urgen, M. (2013). Structure and photovoltaic properties of Ag/p-CuPc/a-Si/c-Si/Ag organic-inorganic hybrid heterojunction fabricated by chemical spray pyrolysis technique.
Microelectronic Engineering, 108, 150-157.
- Tunc, T., and Gokcen, M. (2012). Prepartion and Electrical Characteristion Of Au/n-Si (110) Sucructure With PVA-Nickel Acetate Composite Film Interfacial Layer. Journal Of Composite Materials, 46, 2843-2850.
- Yakuphanoglu, F. (2010). Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye. Journal Alloys Comp., 494(2), 451–455.
- Yakuphanoglu, F., Ocak, Y. S., Kılıcoglu, T. and Farooq, W. A. (2011). Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye. Micro. Eng., 88, 2951–2944.
- Zafer, C. (2006). Organik Boya Esaslı Nanokristal Yapılı İnce Film Güneş Pili Üretimi. Ege Üniversitesi Fen Bilimleri Enstitüsü, Doktora Tezi.