THERMAL SPREADING PERFORMANCE OF GaN-ON-DIAMOND SUBSTRATE HEMTS WITH LOCALIZED JOULE HEATING
Abstract
Keywords
References
- Anaya J., Sun H., Pomeray J., and Kuball M., 2016, Thermal management of GaN-on-diamond high electron mobility transistors: Effect of the nanostructure in the diamond near nucleation region, Proc. of the 15th InterSociety Conf. on Thermal and Thermomechanical Phenomena in Electronic Systems, Las Vegas, 1558–1565.
- Angadi M. A., Watanabe T., Bodapati A., Xiao X., Keblinski P., Schelling P. K., and Phillpot S. R., 2006, Thermal transport and grain boundary conductance in ultrananocrystalline diamond thin films, J. of Applied Physics, 99(11).
- Azarifar M. and Donmezer N., 2017, A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs, Microelectronics Reliability, 74.
- Cho J., Bozorg-Grayeli E., Altman. D. H., Asheghi M., Goodson K., 2012, Low thermal resistances at GaN-SiC interfaces for HEMT technology, IEEE Electron Device Letters, 33(3), 378–380.
- Cho J., Li Z., Bozorg-Grayeli E., Kodama. T., Francis D., Ejeckham F., Faili F., Asheghi M., and Goodson K., 2012, Thermal characterization of GaN-on-diamond substrates for HEMT applications, Proc. of the 11th InterSociety Conf. on Thermal and Thermomechanical Phenomena in Electronic Systems, 435–439.
- Cho J., Li Z., Bozorg-Grayeli E., Kodama. T., Francis D., Ejeckham F., Faili F., Asheghi M., and Goodson K., Improved thermal interfaces of GaN-Diamond composite substrates for HEMT applications’, IEEE Trans. on Components, Packaging, and Manufacturing Technology, 3(1), 79–85.
- Dumka D.C., Chou T.M., Jimenez J.L., Fanning D.M., Francis D., Faili F., Ejeckam F., Pomeroy J.W, and Kuball M., 2013, Electrical and thermal performance of AlGaN/GaN HEMTs on diamond substrate for RF applications, IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest, Monterey.
- Dussaigne A., Gonschorek M., Malinverni M., Py M. A., Martin D., Mouti1 A., Stadelmann P., and Grandjean N., 2010, High-mobility AlGaN/GaN two-dimensional electron gas heterostructure grown on (111) single crystal diamond substrate, Japanese J. of Applied Physics, 49, 0610011–0610014.
Details
Primary Language
English
Subjects
Mechanical Engineering
Journal Section
Research Article
Authors
Mohammad Azarıfar
This is me
Türkiye
Doğacan Kara
This is me
Türkiye
Nazlı Dönmezer
*
This is me
Türkiye
Publication Date
October 31, 2019
Submission Date
October 2, 2018
Acceptance Date
April 14, 2019
Published in Issue
Year 2019 Volume: 39 Number: 2