Araştırma Makalesi

THERMAL SPREADING PERFORMANCE OF GaN-ON-DIAMOND SUBSTRATE HEMTS WITH LOCALIZED JOULE HEATING

Cilt: 39 Sayı: 2 31 Ekim 2019
  • Mohammad Azarıfar
  • Doğacan Kara
  • Nazlı Dönmezer *
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THERMAL SPREADING PERFORMANCE OF GaN-ON-DIAMOND SUBSTRATE HEMTS WITH LOCALIZED JOULE HEATING

Öz

Diamond is the new substrate of choice for high power/frequency AlGaN/GaN high electron mobility transistors (HEMTs). Due to its high thermal conductivity, diamond presents improvements in removing concentrated heat from the electron channel, a necessity for reliable performance of these devices. Previous thermal performance comparison studies of GaN-on-SiC and GaN-on-diamond devices are limited to devices with often large and identical heat source regions due to modeling and experimental limitations. Analytical procedure presented in this study overcome these limitations and provide a more comprehensive thermal spreading performance analysis of GaN-on-SiC and GaN-on-diamond HEMTs with localized Joule heating. Important thermal spreading factors such as thermal boundary resistance, GaN buffer layer thickness, and multifinger arrangements are also investigated in this study.

Anahtar Kelimeler

Kaynakça

  1. Anaya J., Sun H., Pomeray J., and Kuball M., 2016, Thermal management of GaN-on-diamond high electron mobility transistors: Effect of the nanostructure in the diamond near nucleation region, Proc. of the 15th InterSociety Conf. on Thermal and Thermomechanical Phenomena in Electronic Systems, Las Vegas, 1558–1565.
  2. Angadi M. A., Watanabe T., Bodapati A., Xiao X., Keblinski P., Schelling P. K., and Phillpot S. R., 2006, Thermal transport and grain boundary conductance in ultrananocrystalline diamond thin films, J. of Applied Physics, 99(11).
  3. Azarifar M. and Donmezer N., 2017, A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs, Microelectronics Reliability, 74.
  4. Cho J., Bozorg-Grayeli E., Altman. D. H., Asheghi M., Goodson K., 2012, Low thermal resistances at GaN-SiC interfaces for HEMT technology, IEEE Electron Device Letters, 33(3), 378–380.
  5. Cho J., Li Z., Bozorg-Grayeli E., Kodama. T., Francis D., Ejeckham F., Faili F., Asheghi M., and Goodson K., 2012, Thermal characterization of GaN-on-diamond substrates for HEMT applications, Proc. of the 11th InterSociety Conf. on Thermal and Thermomechanical Phenomena in Electronic Systems, 435–439.
  6. Cho J., Li Z., Bozorg-Grayeli E., Kodama. T., Francis D., Ejeckham F., Faili F., Asheghi M., and Goodson K., Improved thermal interfaces of GaN-Diamond composite substrates for HEMT applications’, IEEE Trans. on Components, Packaging, and Manufacturing Technology, 3(1), 79–85.
  7. Dumka D.C., Chou T.M., Jimenez J.L., Fanning D.M., Francis D., Faili F., Ejeckam F., Pomeroy J.W, and Kuball M., 2013, Electrical and thermal performance of AlGaN/GaN HEMTs on diamond substrate for RF applications, IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest, Monterey.
  8. Dussaigne A., Gonschorek M., Malinverni M., Py M. A., Martin D., Mouti1 A., Stadelmann P., and Grandjean N., 2010, High-mobility AlGaN/GaN two-dimensional electron gas heterostructure grown on (111) single crystal diamond substrate, Japanese J. of Applied Physics, 49, 0610011–0610014.

Ayrıntılar

Birincil Dil

İngilizce

Konular

Makine Mühendisliği

Bölüm

Araştırma Makalesi

Yazarlar

Mohammad Azarıfar Bu kişi benim
Türkiye

Doğacan Kara Bu kişi benim
Türkiye

Nazlı Dönmezer * Bu kişi benim
Türkiye

Yayımlanma Tarihi

31 Ekim 2019

Gönderilme Tarihi

2 Ekim 2018

Kabul Tarihi

14 Nisan 2019

Yayımlandığı Sayı

Yıl 2019 Cilt: 39 Sayı: 2

Kaynak Göster

APA
Azarıfar, M., Kara, D., & Dönmezer, N. (2019). THERMAL SPREADING PERFORMANCE OF GaN-ON-DIAMOND SUBSTRATE HEMTS WITH LOCALIZED JOULE HEATING. Isı Bilimi ve Tekniği Dergisi, 39(2), 111-119. https://izlik.org/JA54SH73UG
AMA
1.Azarıfar M, Kara D, Dönmezer N. THERMAL SPREADING PERFORMANCE OF GaN-ON-DIAMOND SUBSTRATE HEMTS WITH LOCALIZED JOULE HEATING. Isı Bilimi ve Tekniği Dergisi. 2019;39(2):111-119. https://izlik.org/JA54SH73UG
Chicago
Azarıfar, Mohammad, Doğacan Kara, ve Nazlı Dönmezer. 2019. “THERMAL SPREADING PERFORMANCE OF GaN-ON-DIAMOND SUBSTRATE HEMTS WITH LOCALIZED JOULE HEATING”. Isı Bilimi ve Tekniği Dergisi 39 (2): 111-19. https://izlik.org/JA54SH73UG.
EndNote
Azarıfar M, Kara D, Dönmezer N (01 Ekim 2019) THERMAL SPREADING PERFORMANCE OF GaN-ON-DIAMOND SUBSTRATE HEMTS WITH LOCALIZED JOULE HEATING. Isı Bilimi ve Tekniği Dergisi 39 2 111–119.
IEEE
[1]M. Azarıfar, D. Kara, ve N. Dönmezer, “THERMAL SPREADING PERFORMANCE OF GaN-ON-DIAMOND SUBSTRATE HEMTS WITH LOCALIZED JOULE HEATING”, Isı Bilimi ve Tekniği Dergisi, c. 39, sy 2, ss. 111–119, Eki. 2019, [çevrimiçi]. Erişim adresi: https://izlik.org/JA54SH73UG
ISNAD
Azarıfar, Mohammad - Kara, Doğacan - Dönmezer, Nazlı. “THERMAL SPREADING PERFORMANCE OF GaN-ON-DIAMOND SUBSTRATE HEMTS WITH LOCALIZED JOULE HEATING”. Isı Bilimi ve Tekniği Dergisi 39/2 (01 Ekim 2019): 111-119. https://izlik.org/JA54SH73UG.
JAMA
1.Azarıfar M, Kara D, Dönmezer N. THERMAL SPREADING PERFORMANCE OF GaN-ON-DIAMOND SUBSTRATE HEMTS WITH LOCALIZED JOULE HEATING. Isı Bilimi ve Tekniği Dergisi. 2019;39:111–119.
MLA
Azarıfar, Mohammad, vd. “THERMAL SPREADING PERFORMANCE OF GaN-ON-DIAMOND SUBSTRATE HEMTS WITH LOCALIZED JOULE HEATING”. Isı Bilimi ve Tekniği Dergisi, c. 39, sy 2, Ekim 2019, ss. 111-9, https://izlik.org/JA54SH73UG.
Vancouver
1.Mohammad Azarıfar, Doğacan Kara, Nazlı Dönmezer. THERMAL SPREADING PERFORMANCE OF GaN-ON-DIAMOND SUBSTRATE HEMTS WITH LOCALIZED JOULE HEATING. Isı Bilimi ve Tekniği Dergisi [Internet]. 01 Ekim 2019;39(2):111-9. Erişim adresi: https://izlik.org/JA54SH73UG