A SIMPLE APPROACH FOR MODELING THE INFLUENCE OF HOT-CARRIERS ON THRESHOLD VOLTAGE OF MOS TRANSISTORS
Abstract
Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability
concept in modern microcircuits. High energy carriers also called hot carriers are generated in the
MOSFET by the large channel electric field near the drain region. The electric field accelarates the
carriers to effective temperatures well above the lattice temprature. These hot carriers transfer energy
to the lattice through phonon emission and break bonds at the Si/SiO2 interface. The trapping or bond
breaking creates oxide charge and interface traps that effect the channel carrier mobility and the
effective channel potential.
Interface traps and oxide charge effect transistor performance parameters such as threshold voltage
and drive currents in all operating regimes. In this paper, the influence of the hot carriers on the
threshold voltage of MOS trasnsistors is examined experimentally. Using these experimental results a
new method for representation of hot-carrier effect on the threshold voltage of MOS transistors is
proposed.
Key words: MOS transistor, Hot carriers, MOS models
Keywords
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Details
| Primary Language | English |
|---|---|
| Journal Section | Articles |
| Authors | |
| Publication Date | November 10, 2011 |
| Published in Issue | Year 2001 Volume: 1 Issue: 2 |
