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Year 2008, Volume: 8 Issue: 2, 733 - 738, 02.01.2012

Abstract

References

  • Oana Y, Kotake H, Mukai N, and Ide K: Eectrical properties of polycrystalline silicon Mosfet’s on glass. J Appl Phys, 22, 493, (1983)
  • T.I.Kamins: Hall mobility in chemically deposited polycrystalline silicon, J.Appl Phys.42, 4357, (1971)
  • N.C.C.Lu, L.Gerzberg, J.D.Meindl, The effect of film thickness on the electrical properties of LPCVD polysilicon films. J Electrochem Soc. 131, 897, (1984)
  • L.Mei, M.River, Y.K.Wark, R.W.Dutton, Grain growth mechanisms in polysilicon, J Electrochem Soc. 129, 1791, (1982)
  • Y.Bourezig, H.Sehil, B.Zebentout, Z.Benamara, F.Raoult, O.Bonnaud, Solid State Phenomena 80-81 (2001)
  • T.I.Kamins,Solid State Electronics ,789(1972)
  • Warner J, Peisl M: exponential band tails in polycrystalline semiconductor films. Phys Rev. 31 6881, (1985)
  • Sze SM: Physics of semiconductor Devices. Wiley edition New York 1981
  • Selberherr S: Analysis and Simulation of Semiconductor Devices. Springer Verlag- Wien 1984
  • Levinson J, Shepherd FR, Scanlon PJ, Westwood WD, Este G, Rider M: Conductivity behavior in polycrystalline semiconductor thin film transistor. J Appl Phys. 53, 1193, (1982)

ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect

Year 2008, Volume: 8 Issue: 2, 733 - 738, 02.01.2012

Abstract

ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect

References

  • Oana Y, Kotake H, Mukai N, and Ide K: Eectrical properties of polycrystalline silicon Mosfet’s on glass. J Appl Phys, 22, 493, (1983)
  • T.I.Kamins: Hall mobility in chemically deposited polycrystalline silicon, J.Appl Phys.42, 4357, (1971)
  • N.C.C.Lu, L.Gerzberg, J.D.Meindl, The effect of film thickness on the electrical properties of LPCVD polysilicon films. J Electrochem Soc. 131, 897, (1984)
  • L.Mei, M.River, Y.K.Wark, R.W.Dutton, Grain growth mechanisms in polysilicon, J Electrochem Soc. 129, 1791, (1982)
  • Y.Bourezig, H.Sehil, B.Zebentout, Z.Benamara, F.Raoult, O.Bonnaud, Solid State Phenomena 80-81 (2001)
  • T.I.Kamins,Solid State Electronics ,789(1972)
  • Warner J, Peisl M: exponential band tails in polycrystalline semiconductor films. Phys Rev. 31 6881, (1985)
  • Sze SM: Physics of semiconductor Devices. Wiley edition New York 1981
  • Selberherr S: Analysis and Simulation of Semiconductor Devices. Springer Verlag- Wien 1984
  • Levinson J, Shepherd FR, Scanlon PJ, Westwood WD, Este G, Rider M: Conductivity behavior in polycrystalline semiconductor thin film transistor. J Appl Phys. 53, 1193, (1982)
There are 10 citations in total.

Details

Primary Language English
Journal Section Articles
Authors

Y. Bourezıg This is me

B. Bouabdallah This is me

F. Gaıffot This is me

Publication Date January 2, 2012
Published in Issue Year 2008 Volume: 8 Issue: 2

Cite

APA Bourezıg, Y., Bouabdallah, B., & Gaıffot, F. (2012). ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering, 8(2), 733-738.
AMA Bourezıg Y, Bouabdallah B, Gaıffot F. ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering. January 2012;8(2):733-738.
Chicago Bourezıg, Y., B. Bouabdallah, and F. Gaıffot. “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of Film Thickness Effect”. IU-Journal of Electrical & Electronics Engineering 8, no. 2 (January 2012): 733-38.
EndNote Bourezıg Y, Bouabdallah B, Gaıffot F (January 1, 2012) ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering 8 2 733–738.
IEEE Y. Bourezıg, B. Bouabdallah, and F. Gaıffot, “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect”, IU-Journal of Electrical & Electronics Engineering, vol. 8, no. 2, pp. 733–738, 2012.
ISNAD Bourezıg, Y. et al. “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of Film Thickness Effect”. IU-Journal of Electrical & Electronics Engineering 8/2 (January 2012), 733-738.
JAMA Bourezıg Y, Bouabdallah B, Gaıffot F. ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering. 2012;8:733–738.
MLA Bourezıg, Y. et al. “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of Film Thickness Effect”. IU-Journal of Electrical & Electronics Engineering, vol. 8, no. 2, 2012, pp. 733-8.
Vancouver Bourezıg Y, Bouabdallah B, Gaıffot F. ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering. 2012;8(2):733-8.