BRIDGMAN/STOCKBARGER TEKNİĞİYLE BÜYÜTÜLEN XIIIn2Se4 ÜÇLÜ YARIİLETKENLERİN YAPISAL KARAKTERİZASYONU

Year 2021, Volume: 1 Issue: 2, 77 - 85, 31.12.2021

Bekir Gürbulak Kübra Alemdar Duman Mehmet Kürşat Dumanlı

Abstract

Nano ve optoelektronik teknolojinin ilerlemesinde yarıiletkenlerin alanı önemi giderek artmaktadır. Ancak, kullanılacak yarıiletkenlerin hem kolay elde edilebilir hem de uygulama alanının geniş olması daha da önem arz etmektedir. Bu maksatla, uygulama alanlarının çok olduğu ve karakteristiklerinin tam olarak belirlendiği yarıiletkenlere ihtiyaç duyulmaktadır. Elde edilen bütün sonuçlar analiz edilerek nano ve optoelektronik teknolojisi için önemli olan bu kristallerden FeIn2Se4 yapısal karakteristikleri detaylı olarak araştırılacaktır. XIIIn2Se4 (XII =Mn, Fe vb.) üçlü yarıiletken bileşikleri, bölümümüz kristal büyütme laboratuvarında, Bridgman-Stockbarger metodu ile büyütülmüştür. Numunelerin, yapısal ve morfolojik karakterizasyonları X-Işını Kırınımı (XRD), Taramalı Elektron Mikroskobu (SEM) ve Enerji Ayrımlı X-ışını (EDX) spektroskopisi teknikleri kullanılarak gerçekleştirilmiştir. X-Işını Kırınımı bulguları incelendiğinde FeIn2Se4 yarıiletkenlerin hegzagonal yapıya sahip olduğu bulunmuştur. FeIn2Se4 yarıiletkeninin Raman spektrumu alınmış, yedi tipik titreşim tepesi bulunmuştur.

Keywords

XIIIn2Se4, Bridgman/Stockbarger Tekniği, XRD, SEM, EDX, Raman spektroskopisi

STRUCTURAL CHARACTERIZATION XIIIn2Se4 TERNARY SEMICONDUCTORS GROWN WITH BRIDGMAN/STOCKBARGER TECHNIQUE

Abstract

The importance of semiconductors paving the way for nano and optoelectronic technology has recently been increasing. But, producing them easily and having their vast application fields are most important. For that reason, the crystals having wide application field and their characteristics which are determinated are needed. The structural characteristics of these FeIn2Se4 crystals which are important fort the nano and optoelectronic technology were explored in detail by analysing the all obtained results. XIIIn2Se4 (XII=Mn, Fe, Ni, vb.) ternary semiconductor compounds grown in our crystal growth laboratory by the Bridgman-Stockbarger method. The structural and morphological characterizations of the sample will be applied X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy-dispersive X-ray spectroscopy (EDX) technique. When X-ray diffraction findings had examined, it was found that TlGaS2 semiconductor had hexagonal structure. The Raman spectrum of TlGaS2 semiconductor was taken, seven typical vibration peaks were found.

Keywords

XIIIn2Se4, Bridgman/Stockbarger Technique, XRD, SEM, EDX, Raman spectrum

References

• [1] Bodnara I. V., Viktorov I. A., and Pavlyukovets S. A., Growth, Structure and Thermal Expansion Anisotropy of FeIn2Se4 Single Crystals, Inorganic Materials, 2010, Vol. 46, No. 6, pp. 604–608. © Pleiades Publishing, Ltd., 2010. published in Neorganicheskie Materialy, 2010, Vol. 46, No. 6, pp. 681–685.
• [2] Barbaran, J.H., Guseinov, G.G., Aliyev, Y.I., and Agamirzoeva, G.M., The Structure and Magnetic properties of Fe1. 2In1. 87Se4 single crystals, Journal of Physics: Conference Series 153 (1) 012040.
• [3] Reil, S. and Haeuseler, H., Materials with Layered Structures X1: Subsolidus Phase Diagram of the system FeIn2S4–FeIn2Se4, J. Alloys Compd., 1998, vol. 270, pp.83–87.
• [4] Attolini G., Sagredo V., Mogollón L., Torres T., and C. Frigeri Growth and characterization of FexMn1-xIn2Se4 (0 ≤ x ≤ 1) single crystals, Cryst. Res. Technol. 40, No. 10–11, 1064 – 1066 (2005) DOI 10.1002/crat.200410487.
• [5] Shand W. A., phys. stat. sol. a 3, K77 (1970).
• [6] Range K. J., Klement U., Doll G., Bucher E. and Bauman J. R., Z. Naturforsch. 46b, 1122 (1991).
• [7] Segura, A., Guesdon, J. P., Besson, J. M., Chevy, A., 1983. Photoconductivity and photovoltaic effect in indium selenide. J. Appl. Phys., 54 (2), 876-888.
• [8] Berand N., K. J. Range, J. Alloys Comp., 205 (1994), p. 295
• [9] Irie, T., Endo, S., Kimura, S., 1979. Electrical-Properties of p-type and n-type CuInSe2 Single-Crystals. Japanese Journal of Applied Physics 18 (7), 1303-1310.
• [10] Shih, I., Champness, C. H., Shahidi, A. V., 1986. Growth by directional freezing of CuInSe2 and diffused homojunctions in bulk material. Solar Cells, 16(1-4), 27-41.
• [11] Gürbulak, B., 1997. İkili (InSe,InSe: Er,GaSe,GaSe: Gd) veÜçlü(TlGaSe2,TlGaSe2: Gd)Tek KristallerinBüyütülmesi Soğurma ve Elektriksel Özelliklerin İncelenmesi.Doktora Tezi, Atatürk Üniversitesi Fen Bil. Enst. Erzurum.
• [12] Gürbulak B., Duman S. and Ateş A., 2004. The Urbach Tails and Optical Absorption in Layered Semiconductor TlGaSe2 and TlGaS2 Single Crystals, Czechoslovak Journal of Physics, 55: 93-103.
• [13] Banwell C.N. and McCash, E.M., 1996. Fundamental of Molecular Spectroscopy. Tata McGraw-Hill Publishing.
• [14] Micocci G., Serra A. and Tepore A., 1997, Impurity Levels in Sn-Doped GaSe Semiconductor, Phys, Stat. Sol., 162: 649-659.
• [15] Sanchez J. F., Errandnea D., Segura A., Roa L. and Chevy A., 1998, Tin-related Double Acceptors in Gallium Selenide Crystals, Journal of Applied Physics, 83 (9): 4750-4755.
• [16] Gürbulak B., 1999, The Optical Absorption Edge of p-type Tl(1-x)GaPrxSe2 and TlGaSe2, Physica Scripta, 60: 584-588.
• [17] Kato A., Nishigaki M., Mamedov N., Yamazaki M., Abdullayeva S., Kerimova E., Uchiki H., Iida S., 2003, Optical properties and photo-induced memory effect related with structural phase transition in TlGaS2, Journal of Physics and Chemistry of Solids 64 1713–1716.
• [18] Mustafaeva S. N., 2004. Photoelectric and X-Ray Dosimetric Properties of Yb Dopped TlGaS2 Single Crystals, Physics of the Solid State, 47: 2015-2019.
• [19] Yüksek N. S., Gasanly N. M., Aydınlı A., Ozkan H. and Acikgoz M., 2004. Infrared photoluminescence from TlGaS2 layered single crystals, Cryst. Res. Technol. 39, No. 9, 800-806.
• [20] Qasrawi A. F. and Gasanly N. M., 2005. Optoelectronic and Electrical Properties of TlGaS2 Single Crystals, Phys, Stat. Sol. 202 (13): 2501-2507.
• [21] Qasrawi A. F. and Gasanly N. M., 2006. Photoelectronic and Electrical Properties of Tl2InGaS4 Layered Crystals, Solide State Communications, 141: 117-121.
• [22] Qasrawi A. F. and Gasanly N. M., 2007. Crystal Data and Indirect Transitions in Tl2InGaSe2 Crystals, Materials Research Bulletin, 43: 1497-1501.
• [23] Qasrawi A. F. and Gasanly N. M., 2008, Dark Electrical Conductivity and Photoconductivity of Ga4Se3S Layered Single Crystals, Journal of Physics and Chemistry of Solids, 69: 2719-2722.
• [24] Qasrawi A. F. and Gasanly N. M., 2008b, Hopping Conduction in Ga4Se3S Layered Single Crystals, Solid State Communications, 148: 190-193.
• [25] Karabulut O., Parlak M. and Mamedov G. M., 2006. Structura and Electrical Properties of TlGa(SxSe1-x)2 Mixed Crystals, Journal of Alloys and Compounds, 429: 50-55.
• [26] Karabulut O., Bilir G., Mamedov G. M., Seyhan A. and Turan R., 2008. Photoluminescence Spectra of Nitrogen Implanted GaSe Crystals, Journal of Limunescence, 128: 1551-1555.
• [27] El-Nahass M. M., Sallam M. M. and Abd Al-Wahab A. H. S., 2008. Optoelectronic and Electrical Properties of TlInS2 Layered Single Crystals, J. Appl. Cryst., 18: 367-37.
• [28] Torresa T., Sagredoa V., de Chalbauda L.M., Attolinib G. and Bolzonib F., 2006. Magnetic and structural characterization of the semiconductor FeIn2Se4, Physica B. 384, 100-102.
• [29] Boledzyuk V. B., Kovakyuk Z. D., Kudrynskyi Z.R., Ivanov V. I. and Shevchenko A. D., 2016. Physical properties of layered FeIn2Se4 Single Crystals, Functional Materials. 23, No. 4, 557-560.
• [30] Vinagradov E. A., Zhinzhin G. N., Melnik N. N., Subbotin S. I., Panfilov V. V., Allakhverdiev K. R., Salaev E. Yu, and. Nani R. Kh, 1979, Phys. Status Solidi B 95, 383.
• [31] Isaacs T.J. and Hopkins R. H., 1975, J. Cryst. Growth 29, 121.
• [32] Zirke J., Frahm G., Tausend A., and Wobig D., 1976, Phys. Stat. Sol. (b) 75 (2), 149.
• [33] Hayek M. and Brafman O., 1973, Phys. Rev. B 8, 2772.