Research Article

Properties of SnO2:F thin films prepared by using HF or NH4F after exposure to atmosphere

Volume: 1 Number: 3 December 13, 2017
EN

Properties of SnO2:F thin films prepared by using HF or NH4F after exposure to atmosphere

Abstract

Nanocrystalline fluorine doped tin oxide (SnO2:F) thin films were produced by the spray pyrolysis technique (SP) on glass substrates at a substrate temperature Ts = 450 °C. The hydrated stannous chloride (SnCl2.2H2O) was used as a precursor and ammonium fluoride (NH4F) was used as the doping compound for one set of films, and hydrofluoric acid (HF) was used as the doping compound to produce another set of films. After exposure to atmosphere for about one month, a comparison between the compositional, morphological and optical properties of the films obtained by using the two doping compounds was performed by using scanning electron microscope (SEM) observations, X-ray energy dispersive spectroscopy (EDS) and transmittance measurements. Both sets of films are found to be oxygen rich, but the films prepared by using NH4F have higher oxygen content. SEM images showed that the films prepared by using HF have larger grain size, and EDS analysis showed that these films have higher fluorine to oxygen ratio. In addition, the films prepared by using HF have lower transmittance and higher direct optical bandgap energy. These results are interesting for the use of SnO2:F  as a fore contact in CdS/CdTe solar cells.

Keywords

References

  1. Geraldo, V, Andrade Scalvi, LV, Morais, EA, Santilli, CV, Pulcinelli, SH. Sb Doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel. Materials Research. 2003, 6(4), 451-456. doi.org/10.1590/S1516-14392003000400004.
  2. Yadav, AA, Masumdar, EU, Moholkar, AV, Neumann-Spallart, M, Rajpure, KY, Bhosale, CH. Electrical, structural and optical properties of SnO2:F thin films: Effect of the substrate temperature. Journal of Alloys and Compounds 2009, 488, 350-355. doi.org/10.1016/j.jallcom.2009.08.130.
  3. Banerjee, AN, Maity R, Kundoo, S, Chattopadhyay KK. Poole–Frenkel effect in nanocrystalline SnO2:F thin films prepared by a sol–gel dip-coating technique. Phys. Stat. Sol. (A) 2004, 201(5), 983-989. DOI: 10.1002/pssa.200306766.
  4. Shanthi, E, Banerjee, A, Dutta V, Chopra LK. Electrical and optical properties of tin oxide films doped with F and (Sb + F), J. Appl. Phys. 1982, 53(3), 1615-1621. https://doi.org/10.1063/1.330619.
  5. Bruneaux, J, Cachet, H, Froment, M, Messad, A. Correlation between structural and electrical properties of sprayed tin oxide films with and without fluorine doping. Thin Solid Films 1991, 197, 129-142. doi.org/10.1016/0040-6090(91)90226-N.
  6. Abdul Gafor, WSA, Mohammed MT. The role of the chemical doping on the optical and electrical properties of tin oxide films. Iraqi J. of Chem. 1992, 17(1), 188-191.
  7. Gordillo, G, Moreno, LC, Cruz, WDL, Teheran, P. Preparation and characterization of SnO2 thin films deposited by spray pyrolysis from SnCl2 and SnCl4 precursors. Thin Solid Films 1994, 252, 61-66. DOI:10.1016/0040-6090(94)90826-5.
  8. Rakhshani, AE, Makdisi, Y, Ramazaniyan, HA. Electronic and optical properties of fluorine-doped tin oxide films. J. Appl. Phys. 1998, 83(2), 1049-1057. https://doi.org/10.1063/1.366796

Details

Primary Language

English

Subjects

Material Production Technologies

Journal Section

Research Article

Authors

Shadia Ikhmayies *
Al Isra University
Jordan

Publication Date

December 13, 2017

Submission Date

December 2, 2017

Acceptance Date

December 12, 2017

Published in Issue

Year 2017 Volume: 1 Number: 3

APA
Ikhmayies, S. (2017). Properties of SnO2:F thin films prepared by using HF or NH4F after exposure to atmosphere. Journal of Energy Systems, 1(3), 120-128. https://doi.org/10.30521/jes.360535
AMA
1.Ikhmayies S. Properties of SnO2:F thin films prepared by using HF or NH4F after exposure to atmosphere. Journal of Energy Systems. 2017;1(3):120-128. doi:10.30521/jes.360535
Chicago
Ikhmayies, Shadia. 2017. “Properties of SnO2:F Thin Films Prepared by Using HF or NH4F After Exposure to Atmosphere”. Journal of Energy Systems 1 (3): 120-28. https://doi.org/10.30521/jes.360535.
EndNote
Ikhmayies S (July 1, 2017) Properties of SnO2:F thin films prepared by using HF or NH4F after exposure to atmosphere. Journal of Energy Systems 1 3 120–128.
IEEE
[1]S. Ikhmayies, “Properties of SnO2:F thin films prepared by using HF or NH4F after exposure to atmosphere”, Journal of Energy Systems, vol. 1, no. 3, pp. 120–128, July 2017, doi: 10.30521/jes.360535.
ISNAD
Ikhmayies, Shadia. “Properties of SnO2:F Thin Films Prepared by Using HF or NH4F After Exposure to Atmosphere”. Journal of Energy Systems 1/3 (July 1, 2017): 120-128. https://doi.org/10.30521/jes.360535.
JAMA
1.Ikhmayies S. Properties of SnO2:F thin films prepared by using HF or NH4F after exposure to atmosphere. Journal of Energy Systems. 2017;1:120–128.
MLA
Ikhmayies, Shadia. “Properties of SnO2:F Thin Films Prepared by Using HF or NH4F After Exposure to Atmosphere”. Journal of Energy Systems, vol. 1, no. 3, July 2017, pp. 120-8, doi:10.30521/jes.360535.
Vancouver
1.Shadia Ikhmayies. Properties of SnO2:F thin films prepared by using HF or NH4F after exposure to atmosphere. Journal of Energy Systems. 2017 Jul. 1;1(3):120-8. doi:10.30521/jes.360535

Cited By

Journal of Energy Systems is licensed under CC BY-NC 4.0