InP based converter cells under DC plasma influence

Year 2019, Volume: 3 Issue: 4, 183 - 188, 31.12.2019

Hatice Kurt

https://doi.org/10.30521/jes.659237

Abstract

The plasma parameters have been determined in an infrared image
converter for the InP based plasma cell in a broad range of gas pressure from
10 Torr to 760 Torr at room temperature. 
The electrical properties of the system are controlled by both the
plasma and InP electrode. InP has high electron mobility compared to other
semiconductors and it can be used for high-speed optoelectronic device
applications. Further, any small change in the charge transport mechanism may
cause important changes in the system characteristics. The experimental
measurements are carried out in air and He media. The homogeneity of the
discharge radiation emission depends on the resistivity distribution of the
photodetector plate and the radiation intensity is proportional to the plasma
current. Local changes in the resistivity of the semiconductor result in local
changes in the current and plasma emission.

Keywords

Breakdown, DC plasma, InP electrode, Mean electron energy

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