Undoped and Cr-doped CuO thin films were deposited on n-Si substrates by sol gel spin coating method. These electrical properties of copper oxide-based heterojunction structures were examined as a function of Cr doping concentrations. The results show that a change in Cr concentration significantly affects the electrical properties of Ag/Cu1-xCrxO/n-Si diodes. The all diodes exhibit rectification behavior, as shown by their dark 𝐼−𝑉 characteristics. The crucial junction parameters such as series resistance (R𝑆), rectification ratio (𝑅𝑅), ideality factor (𝑛) and barrier height (Φ𝐵) were calculated by using 𝐼−𝑉 data. The calculated values for the ideality factor (n), which offered details about the performance of the diodes, range from 2.16 to 2.78. The highest 𝑅𝑅 value was obtained from Cu0.5Cr0.5O/n-Si diode. In addition, the capacitance-voltage (𝐶−𝑉) characteristics of the diodes were measured in the frequency range of 10 kHz and 1 MHz. The 𝐶−2−𝑉 graphs were employed to calculate the values of 𝑁𝑣, 𝐸𝑓, 𝐸𝑚𝑎𝑥, and Φ𝐵 (𝐶−𝑉). The results show that the electrical properties of Ag/Cu1-xCrxO/n-Si diodes can be controlled by various chromium doping concentration.
Batman University
BTUBAP-2019-SHMYO-01
BTUBAP-2019-SHMYO-01
Primary Language | English |
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Subjects | Metrology, Applied and Industrial Physics |
Journal Section | Fizik / Physics |
Authors | |
Project Number | BTUBAP-2019-SHMYO-01 |
Early Pub Date | August 29, 2023 |
Publication Date | September 1, 2023 |
Submission Date | February 21, 2023 |
Acceptance Date | May 5, 2023 |
Published in Issue | Year 2023 |