Effect of Annealing Process on Structural and Optical Properties of Cu3SnS4 Thin Films Obtained by SILAR Technique

Abstract

Cu3SnS4 thin films were deposited on glass substrates using successive ionic layer adsorption and reaction (SILAR) method at room temperature and annealed at different temperatures in the nitrogene atmosphere to investigate the effects of the post-deposition annealing process on the structural and optical properties of the films. Structural, surface morphological, and optical properties of films were analysed using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), Raman spectroscopy, and optical absorption measurements. XRD results revealed that the films consisted of a tetragonal Cu3SnS4 phase before annealing, and increasing annealing temperature caused the improvement of crystal structure and the formation of Cu4SnS4, Cu2S and CuS secondary phases. SEM images showed that the films were composed of nanometer-sized randomly shaped particles. EDAX measurements revealed the existence of Cu, Sn and S elements and also showed that the amounts of Sn and S elements decreased with increasing annealing temperature. Raman spectra confirmed the formation of the Cu3SnS4 phase and secondary phases of Cu4SnS4, Cu2S and CuS at high annealing temperatures. From optical absorption measurements, it was determined that the films had direct transitions and the band gap energies decreased from 1.62 eV to 1.47 eV with increasing annealing temperature.

Keywords

• Cu3SnS4
• SILAR
• Thin film
• Annealing

Tavlama İşleminin SILAR Tekniğiyle Elde Edilen Cu3SnS4 İnce Filmlerin Yapısal ve Optik Özellikleri Üzerine Etkisi

Abstract

Cu3SnS4 ince filmler, sıralı iyonik tabaka adsorpsiyonu ve reaksiyonu (SILAR) tekniği kullanılarak cam altlıklar üzerine oda sıcaklığında büyütüldü ve azot atmosferinde farklı sıcaklıklarda tavlanarak büyütme sonrası tavlama işleminin filmlerin yapısal ve optik özellikleri üzerindeki etkileri incelendi. Filmlerin yapısal, yüzey morfolojik ve optik özellikleri X-ışını kırınımı (XRD), taramalı elektron mikroskobu (SEM), enerji dağılımlı X-ışını analizi (EDAX), Raman spektroskopisi ve optik soğurma ölçümleri kullanılarak incelendi. XRD sonuçları, filmlerin tavlama öncesinde tetragonal Cu3SnS4 fazından oluştuğunu, tavlama sıcaklığının arttırılmasının kristal yapının iyileşmesine ve Cu4SnS4, Cu2S ve CuS ikincil fazlarının oluşmasına neden olduğunu ortaya çıkardı. SEM görüntüleri, filmlerin nanometre boyutunda rastgele şekilli parçacıklardan oluştuğunu gösterdi. EDAX ölçümleri Cu, Sn ve S elementlerinin varlığını ve ayrıca tavlama sıcaklığının artmasıyla Sn ve S elementlerinin miktarlarının azaldığını ortaya koydu. Raman spektrumları Cu3SnS4 fazının ve yüksek tavlama sıcaklıklarında Cu4SnS4, Cu2S ve CuS ikincil fazlarının oluşumunu doğruladı. Optik soğurma ölçümlerinden filmlerin direkt geçişlere sahip olduğu ve artan tavlama sıcaklığıyla yasak enerji aralığı değerinin 1.62 eV'dan 1.47 eV'a azaldığı belirlendi.

Keywords

• Cu3SnS4
• SILAR
• İnce film
• Tavlama

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