Effect of Incidence Angle on Capacitance of Vertical Parallel Silicon Solar Cell under Modulation Frequency
Abstract
In this work, the modeling for the capacitance of a vertical parallel silicon solar cell has been carried
out with an analytical approach. A theory on the determination of the diffusion coeffcient of the excess minority
carriers of a silicon solar cell is presented. Based on the continuity equation, excess minority carrier’s density,
photocurrent density and photovoltage have been determined. Also, this study allows us to determine the influences
of incidence angles on the photocurrent density, the photovoltage and the diffusion capacitance (open and short
circuit). The objective of this work is to show the effects of incidence angles on the solar cell capacitance with these
electrical parameters.
Keywords
References
- Avraham G, Paul S, 1974. Vertical Multijunction Solar-Cell One-Dimensional Analysis; IEEE transactions on electron devices, vol. ed-21, no 6, 351-356.
- Turgut G, Kocyigit A, Sonmez E, 2015. Influences of Pr and Ta doping concentration on the characteristic features of FTO thin film deposited by spray pyrolysis, Chinese Physics B, Volume: 24 Issue: 10 Article Number: 107301.
- Boer KW, 2010. Introduction to space charge effects in semiconductor, third edition,Springer-Verlag, 242 p.
- Colinge JP et Colinge CA, 2002. Physics of semiconductor devices, sixth edition, Kluwer Academic Publishers, 311p
- Diallo HL, Dieng B, Ly I, Dione MM, Ndiaye M, Lemrabott OH, Bako ZN, Wereme A and Sissoko G, 2012. Determination of the Recombination and Electrical Parameters of Vertical Multijunction Silicon Solar Cell. Res.J. Appl. Sci. Engineering Technol. Maxwell Scientific Organization, 3(7): 602-611, ISSN: 2040-7467.
- Dieng A, Zerbo I, Wade M, Maiga AS and Sissoko G, 2011. Three-dimensional study of a polycrystalline silicon solar cell: the influence of the applied magnetic field on the electrical parameters, Semicond. Sci. Technol.9, 26 095023.
- Diallo HL, Wereme A, Maiga AS and Sissoko G, 2008. New approach of both junction and back surface recombination velocities in a 3D modelling study of a polycrystalline silicon solar cell, Eur. Phys. J. Appl. Phys. 42 203–11.
- Grove AS, 1967. Physics and Technology of Semiconductor Devices, First Edition, Wiley, New York. 174 p.
Details
Primary Language
English
Subjects
-
Journal Section
Research Article
Authors
Gökhan Şahin
*
This is me
Publication Date
March 31, 2017
Submission Date
March 28, 2016
Acceptance Date
July 24, 2016
Published in Issue
Year 2017 Volume: 7 Number: 1