Investigation of Structural, Morphological and Optical Properties of Gallium Selenide (GaSe) Thin Films Grown on Different Substrates

Abstract

Structural, morphological and optical properties of (Gallium Selenide) GaSe thin films grown on glass and gallium selenide single crystal substrates with Modified Chemical Bath Deposition (M-CBD) method have been investigated by using XRD, AFM and UV-Vis techniques. XRD measurements showed that GaSe thin films grown on glass and GaSe single crystal substrates were at rhombohedral and hexagonal structures, respectively. The average particle sizes of GaSe thin films grown on glass and GaSe single crystal substrates were determined form AFM images as 33.2 nm and 35.3 nm, respectively. It was observed that the particle sizes of films grown on both glass and GaSe substrate increased while the band gaps decreased with annealing. Urbach energies of GaSe thin films grown on glass substrates were found to be bigger than Urbach energies of GaSe thin films grown on GaSe single crystal substrates.

Keywords

• M-CBD,Gallium Selenide,thin film,glass and single crystal substrates

Farklı Alt Tabanlar Üzerinde Büyütülen Galyum Selenit (GaSe) İnce Filmlerinin Yapısal, Morfolojik ve Optik Özelliklerinin İncelenmesi

Abstract

Modifiye Kimyasal Banyo Depolama (M-CBD) yöntemi ile cam ve Galyum Selenit (GaSe) tek kristal alt tabanlar üzerinde büyütülen GaSe ince filmlerinin yapısal, morfolojik ve optik özellikleri XRD, AFM ve UV-Vis teknikleri ile araştırıldı. XRD ölçümleri cam ve GaSe tek kristal alt tabanlar üzerinde büyütülen GaSe ince filmlerinin sırasıyla rombohedral ve hekzagonal yapıda olduğunu gösterdi. AFM görüntülerinden cam ve GaSe tek kristal alt tabanlar üzerinde büyütülen GaSe ince filmlerinin ortalama parçacık boyutlarının sırasıyla 33.2 nm ve 35.3 nm olduğu hesaplandı. Ayrıca, cam ve GaSe tek kristal alt tabanlar üzerinde büyütülerek tavlanan GaSe ince filmlerinin ortalama parçacık boyutları tavlamayla artarken yasak enerji aralıkları ise tavlama ile azalmaktadır. Cam alt tabanlar üzerinde büyütülen GaSe ince filmlerinin Urbach enerjilerinin GaSe tek kristal alt tabanlar üzerinde büyütülen GaSe ince filmlerinin Urbach enerjilerinden daha büyük olduğu bulundu.

Keywords

• M-CBD,ince film,Galyum Selenit,cam ve tek kristal alt tabanlar

References

1. Allakhverdiev K, Baykara T, Ellialtioğlu Ş, Hashimzade F, Huseinova D, Kawamura K, Kaya AA, Kulibekov AM, Onari S, 2006. Lattice vibrations of pure and doped GaSe. Materials Research Bulletin, 41: 751-763.
2. Anis MK, Nazar FM, 1983. X-ray and Electron Diffraction Analysis of GaSe Crystals. Journal of Materials Science Letters, 2: 471-474.
3. Anis MK, Piercy AR, 1984. Electrical conduction in p-GaSe. Journal of Physics D: Applied Physics, 17: 1229-1232.
4. Augelli V, Manfredotti C, Murri R, Vasanelli L, 1978. Hall-mobility anisotropy in GaSe. Physical Review B, 17(8): 3221-3226.
5. Blasi CDe, Manno D, Micocci G, Tepore A, 1989. Optical absorption and structure of thermally annealed gallium selenide thin films. Journal of Applied Physics, 65: 1164-1167.
6. Capozzi V, 1981. Direct and Indirect Excitonic Emission in GaSe. Physical Review B. 23(2): 836-840.
7. Capozzi V, Minafra A, 1981. Photoluminescence properties of Cu-doped GaSe. Journal of Physics C: Solid State Physics, 14: 4335-4346.
8. Capozzi V, 1982. Kinetics of radiative recombinations in GaSe and influence of Cu doping on the luminescence spectra. Physical Review B, 28 (8): 4620-4627.

9. Ertap H, Mamedov GM, Karabulut M, Bacıoglu A, 2011. Pool–Frenkel thermoelectric modulation of exciton photoluminescence in GaSe crystals. Journal of Luminescence, 13: 1376-1379.
10. Fernelius NC, 1994. Properties of gallium selenide single crystal. Progress in Crystal Growth and Characterization of Materials, 28(4): 243-249.
11. Garadkar KM, Pawar SJ, Hankare PP, Patil AA, 2010. Effect of annealing on chemically deposited polycrystalline CdTe thin films. Journal of Alloys and Compounds, 491: 77-80.
12. Gillan EG, Barron AR, 1997. Chemical vapor deposition of hexagonal gallium selenide and telluride films from cubane precursors: Understanding the envelope of molecular control. Chemistry of Materials, 9: 3037-3048.
13. Gouskov A, Camassel J, Gouskov L, 1982. Growth and characterization of III-VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe. Progress in Crystal Growth and Characterization, 5: 323-413.
14. Gürbulak B, 1997. İkili (InSe:Er, GaSe, GaSe:Gd) ve Üçlü (TlGaSe2, TlGaSe2:Gd) Tek Kristallerinin Büyütülmesi Soğurma ve Elektriksel Özelliklerinin İncelenmesi. Doktora Tezi, Fen Bilimleri Enstitüsü, Atatürk Üniversitesi.
15. Kamimura H, Nakao K, 1968. Band structures and properties of semiconducting layer compounds GaS and GaSe. Journal of the Physical Society of Japan, 24: 1313-1325.
16. Karabulut O, Parlak M, Turan R, Serincan U, Akınoğlu BG, 2006. Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals. Crystal Research Technology, 41(3): 243-249.
17. Karatay A, Yuksek M, Ertap H, Mak AK, Karabulut M, Elmali A, 2016. Influence of boron concentration on nonlinear absorption and ultrafast dynamics in GaSe crystals. Optical Materials, 64: 74-80.
18. Kim C, Jang K, Lee Y, 2004. Optical properties of Tm-doped GaSe single crystals. Solid State Communications, 130: 701-704.
19. Kyazym-zade AG, Agaeva AA, Salmanov VM, Mokhtari AG, 2007. Optical dedectors on GaSe and InSe layered crystals. Technical Physics, 52(12): 1611-1613.
20. Mamedov GM, Karabulut M, Ertap H, Kodolbaş O, Öktü Ö, Bacıoğlu A, 2009. Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals. Journal of Luminescence, 129: 226–230.
21. Mane RS, Sankapal BR, Lokhande CD, 2000. A chemical method for the deposition of Bi2S3 thin films from a non-aqueous bath. Thin Solid Films, 359: 136-140.
22. Matheswaran P, Kumar RS, Sathyamoorthy R, 2011. Effect of annealing on the structural and optical properties of InSe bilayer thin films. Vacuum, 85: 820-826.
23. Micocci G, Serra A, Tepore A, 1997. Impurity Levels in Sn-Doped GaSe Semiconductor. Physica Status Solidi (a), 162: 649-659.
24. Ohyama M, Fujita Y, 2003. Electrical and optical properties in sputtered GaSe thin films. Surface and Coating Technology, 169-170: 620-623.
25. Pejova B, 2008. Analysis of the shape of spectral dependence of absorption coefficient and stationary photoconductivity spectral response in nanocrystalline bismuth(III) sulfide thin films. Materials Research Bulletin, 43: 2887-2903.
26. Pejova B, 2010. The Urbach–Martienssen absorption tails in the optical spectra of semiconducting variable-sized zinc selenide and cadmium selenide quantum dots in thin film form. Materials Chemistry and Physics, 119: 367–376.
27. Ruiz-Fuertes J, Lopez-Moreno S, Lopez-Solano J, Errandonea D, Segura A, Lacomba-Perales R, Muñoz A, Radescu S, Rodríguez-Hernández P, Gospodinov M, Nagornaya LL, Tu CY, 2012. Pressure effects on the electronic and optical properties of AWO4 wolframites (A = Cd, Mg, Mn, and Zn): The distinctive behavior of multiferroic MnWO4. Physical Review B, 86: 125202-9.
28. Sakr GB, 2007. Optical and electrical properties of GaSe thin films. Materials Science and Engineering B, 138: 1-6.
29. Schubert K, Doerre E, Kluge M, 1953. Z. Metallkunde, 46: 216.
30. Seyhan A, Karabulut O, Akınoğlu BG, Aslan B, Turan R, 2005. Optical Anisotropy in GaSe. Crystal Research Technology, 40(9): 893-895.
31. Shigetomi S, Ikari T, Nakashima H, 2004. Characterization of phosphorus in layered semiconductor GaSe. Journal of Luminescence, 79: 79-84.
32. Shigetomi S, Ikari T, Nakashima H, 2000. Electrical properties of p- and n-GaSe doped with As and Ge. Japan Journal of Applied Physics, 39: 5083-5084.
33. Taylor RA, Ryan JF, 1987. Time resolved exciton photoluminescence in GaSe and GaTe. Journal of Physics C: Solid State Physics, 20: 6175-6187.
34. Ueno K, Tokuchi S, Saiki K, Koma A, 2002. Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrate. Journal of Crystal Growth, 237-239: 1610-1614.
35. Urbach F, 1953. The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids. Physical Review, 92(5): 1324.
36. Vidhya SN, Balasundaram ON, Chandramohan M, 2015. The effect of annealing temperature on structural, morphological and optical properties of CdZnTe thin films. Optics, 126: 5460-5463.
37. Yüksek M, Elmali A, Karabulut M, Mamedov GM, 2009. Switching from negative to positive nonlinear absorption in p type 0.5 at% Sn doped GaSe semiconductor crystal. Optical Materials, 31: 1663-1666.
38. Yüksek M, 2010. Selenyum Bileşikli Bazı Yarıiletkenlerin Çizgisel Olmayan Optik Özellikleri. Doktora Tezi, Fen Bilimleri Enstitüsü, Ankara Üniversitesi.
39. Yuksek M, Karatay A, Ertap H, Elmali A, Karabulut M, 2017. Frequency conversion, nonlinear absorption and carrier of GaSe:B/Er crystals. Optical Materials, 66: 137-141.