Investigation of Electrical Characteristics of Yb/p-Si Schottky Diodes

Year 2019, , 1385 - 1394, 01.09.2019

Havva Elif Lapa , Ali Kökce Ahmet Faruk Özdemir

https://doi.org/10.21597/jist.537844

Abstract

Yb/p-Si Schottky diodes were fabricated by thermal evaporation method. The measurements of current-voltage (I-V) and capacitance-voltage (C-V) of these diodes were carried out at room temperature and dark. The parameters such as ideality factor (n), zero-bias barrier height (Φbo) and series resistance (Rs) of these diodes were obtained by using I-V data whereas some electrical parameters such as Fermi energy level (EF), density of acceptor atoms (NA) and barrier height [Фb(C-V)] were calculated by using C-2-V characteristics. The value of n was calculated as 1.59 while the value of Φbo was determined as 0.75 eV from forward bias I-V characteristic. The values of EF, NA ve Фb(C-V) were obtained as 0.15 eV, 5.27×1015 cm-3 and 0.67 eV from C-2-V characteristic, respectively. Also, the values of n, Фb and Rs were calculated from the functions of Cheung and Norde. According to the findings, Yb/p-Si Schottky diodes have low leakage current, good rectifier rate and high barrier height. These results showed that Yb is an attractive element to obtain high quality Schottky diode.

Keywords

Metal/semiconductor contacts, Yb/p-Si Schottky diodes, electrical characteristic

Yb/p-Si Schottky Diyotlarının Elektriksel Karakteristiklerinin İncelenmesi

Abstract

Yb/p-Si Schottky diyotları termal buharlaştırma yöntemiyle imal edilmiştir. Bu diyotların akım-gerilim (I-V) ve kapasitans-gerilim (C-V) ölçümleri karanlıkta ve oda sıcaklığında alınmıştır. I-V verileri kullanılarak idealite faktörü (n), sıfır-beslem engel yüksekliği (bo) ve seri direnç (Rs) parametreleri hesaplanırken C-2-V karakteristiğinden Fermi enerji seviyesi (EF), alıcı atomların yoğunluğu (NA) ve engel yüksekliği [Фb(C-V)] gibi bazı elektriksel parametreler hesaplanmıştır. Doğru beslem I-V karakteristiklerinden n değeri 1.59 olarak hesaplanırken bo değeri 0.75 eV olarak hesaplanmıştır. C-2-V karakteristiğinden EF, NA ve Фb(C-V) değerleri, sırasıyla, 0.15 eV, 5.27×1015 cm-3 ve 0.67 eV olarak bulunmuştur. Ayrıca, n, Фb ve Rs değerleri Cheung ve Norde fonksiyonlarından da elde edilmiştir. Elde edilen bulgulara göre, Yb/p-Si Schottky diyotlarının düşük sızıntı akımına, iyi bir doğrultma oranına ve yüksek engel yüksekliğine sahip olması, Yb’un kaliteli Schottky diyot elde etmek için cazip bir element olduğunu göstermiştir.

Keywords

Metal/yarıiletken kontaklar, Yb/p-Si Schottky diyotlar, elektriksel karakteristik

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