Two Dimensional Modeling of Au/n-GaN Schottky Device

Year 2020, , 1674 - 1682, 01.09.2020

Bengül Metin , Neşe Kavasoğlu , A. Sevtap Kavasoğlu

https://doi.org/10.21597/jist.691099

Abstract

The current-voltage characteristics are powerfully affected by the lateral inhomogeneity. We developed two dimensional (2D) simulation model for Au/n-GaN Schottky device. In previous studies, it is assumed that zero barrier height inhomogeneity of the device generally good agreement with the Gaussian distribution. In this study, it is accepted that the zero barrier height inhomogeneity is randomly distributed. The structure of the modeling device has columnar grains and gaps between the grains. Structure is divided microcells and every microcell is thought of as a single diode. Whole microcells are connected in parallel. The surface area of the microcells was assumed to be square and circle. In this study, the effect of zero barrier height inhomogeneity and the surface areas of the microcells on the current-voltage characteristics and interface state density are investigated.

Keywords

2D device modeling, zero barrier height, inhomogeneity

Au/n-GaN Schottky Aygıtının İki Boyutlu Modellenmesi

Abstract

Akım-voltaj karakteristikleri yanal homojensizliklerden güçlü bir şekilde etkilenir. Au/n-GaN Schottky aygıtı için iki boyutlu (2B) simülasyon modeli geliştirdik. Önceki çalışmalarda aygıtın sıfır voltluk gerilim altındaki engel yüksekliğindeki homojensizliğinin genellikle Gaussian dağılıma uyduğu varsayılmaktadır. Bu çalışmada, sıfır voltluk gerilim altındaki engel yüksekliğindeki homojensizliğin rastgele dağıldığı kabul edilmiştir. Modellenen aygıt yapısı sütunsu grainlere ve grainler arasında boşluklara sahiptir. Yapı mikro hücrelere ayrılmıştır ve her mikro hücre tek bir diyot olarak düşünülmüştür. Tüm mikro hücreler birbirlerine paralel bağlanmıştır. Mikro hücrelerin yüzey alanlarının kare ve daire olduğu varsayılmıştır. Bu çalışmada, mikro hücrelerin sıfır voltluk gerilim altındaki engel yüksekliğindeki homojensizliğinin ve yüzey alanlarının akım-voltaj karakteristikleri ve arayüzey durum yoğunluğuna etkileri incelenmiştir.

Keywords

2B aygıt modelleme, sıfır gerilimlendirme engel yüksekliği, homojensizlik

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