Investigation of Structural, Morphological and Optical Properties of Gallium Selenide (GaSe) Thin Films Grown on Different Substrates

Year 2019, Volume: 9 Issue: 1, 11 - 19, 01.03.2019

Hüseyin Ertap , Yunus Alkan Mevlüt Karabulut

https://doi.org/10.21597/jist.440288

Abstract

Structural, morphological and optical properties of (Gallium Selenide) GaSe thin films grown on glass and gallium selenide single crystal substrates with Modified Chemical Bath Deposition (M-CBD) method have been investigated by using XRD, AFM and UV-Vis techniques. XRD measurements showed that GaSe thin films grown on glass and GaSe single crystal substrates were at rhombohedral and hexagonal structures, respectively. The average particle sizes of GaSe thin films grown on glass and GaSe single crystal substrates were determined form AFM images as 33.2 nm and 35.3 nm, respectively. It was observed that the particle sizes of films grown on both glass and GaSe substrate increased while the band gaps decreased with annealing. Urbach energies of GaSe thin films grown on glass substrates were found to be bigger than Urbach energies of GaSe thin films grown on GaSe single crystal substrates.

Keywords

M-CBD, Gallium Selenide, thin film, glass and single crystal substrates

Farklı Alt Tabanlar Üzerinde Büyütülen Galyum Selenit (GaSe) İnce Filmlerinin Yapısal, Morfolojik ve Optik Özelliklerinin İncelenmesi

Abstract

Modifiye Kimyasal Banyo Depolama (M-CBD) yöntemi ile cam ve Galyum Selenit (GaSe) tek kristal alt tabanlar üzerinde büyütülen GaSe ince filmlerinin yapısal, morfolojik ve optik özellikleri XRD, AFM ve UV-Vis teknikleri ile araştırıldı. XRD ölçümleri cam ve GaSe tek kristal alt tabanlar üzerinde büyütülen GaSe ince filmlerinin sırasıyla rombohedral ve hekzagonal yapıda olduğunu gösterdi. AFM görüntülerinden cam ve GaSe tek kristal alt tabanlar üzerinde büyütülen GaSe ince filmlerinin ortalama parçacık boyutlarının sırasıyla 33.2 nm ve 35.3 nm olduğu hesaplandı. Ayrıca, cam ve GaSe tek kristal alt tabanlar üzerinde büyütülerek tavlanan GaSe ince filmlerinin ortalama parçacık boyutları tavlamayla artarken yasak enerji aralıkları ise tavlama ile azalmaktadır. Cam alt tabanlar üzerinde büyütülen GaSe ince filmlerinin Urbach enerjilerinin GaSe tek kristal alt tabanlar üzerinde büyütülen GaSe ince filmlerinin Urbach enerjilerinden daha büyük olduğu bulundu.

Keywords

M-CBD, ince film, Galyum Selenit, cam ve tek kristal alt tabanlar

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