The Fabrication of the Pentacene/n-Si Heterojunction Devices and Characterization

Year 2019, Volume: 9 Issue: 1, 581 - 592, 01.03.2019

Zakir Çaldıran

https://doi.org/10.21597/jist.453048

Cited By: 4

Abstract

In this study, electrical properties of
rectifier contacts obtained by using organic semiconducting pentacene material
were investigated. Firstly, Al metal was evaporated on one surface of n-Si
wafer for back contact by thermal evaporation and then n-Si was annealed at 450
°C for 10 mininutes. Then, pentacene organic film was deposited on the other
surface of n-Si wafer by thermal evaporation. Finally, eight circle Ni contacts
with 7.85×10-3 cm-2 area were coated on Pentacene film by sputtering method for
the electrical measurements. Current-voltage (I-V) measurements were performed
at the room temperature and in dark of Ni/Pentacene/n-Si/Al heterojunction
devices.  The basic diode parameters such
as ideality factors (n) and the barrier heights (Ω) of Ni/Pentacene/n-Si/Al
devices were calculated using forward bias I–V curve. The D1
Ni/Pentacene/n-Si/Al heterojunction device showed Schottky behavior with
barrier heights of 0.83 eV and ideality factors of 1.41 using thermionic
emission (TE) theory. Other devices have similar characteristics. Furthermore,
both parameters and series resistance (Rs) of number D1 Ni/Pentacene/n-Si/Al
heterojunction device were calculated using different methods as Cheung and
Norde functions.

Keywords

Pentacene, heterojunction devices, Schottky diode, organik semiconductor

Pentacene/n-Si Heteroeklem Aygıtlarının Yapımı ve Karakterizasyonu

Abstract

Bu çalışmada organik yarıiletken özellik
gösteren pentacene malzemesi kullanılarak elde edilen doğrultucu kontakların
elektriksel özellikleri incelendi. İlk olarak n-Si bir yüzeyine termal
buharlaştırma yöntemi ile Al metali kaplandı ve 450 °C de 10 dakika tavlanarak
omik kontak elde edildi. Daha sonra termal buharlaştırma yöntemi ile n-Si
yarıiletkeninin diğer yüzeyine Pentacene organik filmi kaplandı. Son olarak
elektriksel ölçümler için DC saçtırma yöntemi ile Pentacene üzerine Ni
kaplanarak daire şeklinde sekiz farklı kontak elde edildi. Ni/Pentacene/n-Si/Al
heteroeklem aygıtlarının oda sıcaklığında ve karanlıkta I-V (Akım Voltaj)
ölçümleri yapıldı. TE teorisi kullanılarak yapılan hesaplamalardan elde edilen
aygıtların benzer karakteristik özelliklere sahip olduğu görülmüştür. D1
numaralı Ni/Pentacene/n-Si/Al heteroeklem aygıtı 0.83 eV engel yüksekliği ve
1.41 idealite faktörü ile Schottky davranış göstermiştir. Ayrıca Cheung ve
Norde fonksiyonları gibi farklı metotlar kullanılarak engel yüksekliği ve
idealite faktörü ile beraber D1 numaralı Ni/Pentacene/n-Si/Al heteroeklem
aygıtının seri direnç değerleri de (Rs) hesaplanmıştır.

Keywords

Pentacene, heteroeklem aygıt, Schottky diyot, organik yarıiletken

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