Development of Ultra Fast Gate Driver Board for Silicon Carbide MOSFET Applications

Year 2025, Volume: 15 Issue: 3, 845 - 860, 01.09.2025

Halil Tepedelen , Bilal Eid , Suleyman Adak , Hasan Cangi

https://doi.org/10.21597/jist.1484043

Abstract

Silicon Carbide (SiC) is increasingly utilized in high-temperature, high-power applications due to its exceptional properties, including high-temperature resistance, high electrical conductivity, and a wide bandgap. In this study, the development of an ultra-fast gate driver circuit for SiC MOSFETs, designed for AC/DC and DC/AC converter applications, is presented. SiC switching elements are widely preferred in modern power electronics for their capabilities, such as faster switching within a wide bandwidth (50–250 kHz), higher power density, and operation at elevated voltage levels (up to 1,200 V). The high bandgap energy of SiC enables efficient and reliable operation under demanding conditions. This study focuses on designing an optimized gate driver board that minimizes voltage spikes and noise, achieving a voltage overshoot below 10% and noise suppression of up to 15 dB during switching operations. The proposed design is particularly suited for applications in solar inverters and other high-frequency power electronics systems. Simulation and experimental results, including switching rise times under 20 ns and total harmonic distortion (THD) levels below 3%, validate the effectiveness of the proposed gate driver.

Keywords

SiC MOSFET , PWM inverters Keyword , Solar inverter , Gate Drive Board , Switching device

Supporting Institution

Tübitak

Project Number

119E149

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